BUV21
SWITCHMODEt Series NPN Silicon Power Transistor
This device is designed for high speed, high current, high power ...
BUV21
SWITCHMODEt Series
NPN Silicon Power
Transistor
This device is designed for high speed, high current, high power applications.
Features
High DC Current Gain:
hFE min = 20 at IC = 12 A
Low VCE(sat), VCE(sat)
max = 0.6 V at IC = 8 A
Very Fast Switching Times:
TF max = 0.4 ms at IC = 25 A
These are Pb−Free Devices*
MAXIMUM RATINGS
Rating
Symbol
Value
Collector−Emitter Voltage
VCEO(SUS)
200
Collector−Base Voltage
VCBO
250
Emitter−Base Voltage
VEBO
7
Collector−Emitter Voltage (VBE = −1.5 V)
VCEX
250
Collector−Emitter Voltage (RBE = 100 W)
VCER
240
Collector−Current − Continuous
IC
40
− Peak (PW v 10 ms)
ICM
50
Base−Current Continuous
IB
8
Total Device Dissipation @ TC = 25_C
PD
250
Operating and Storage Junction Temperature Range
TJ, Tstg −65 to 200
Unit Vdc Vdc Vdc Vdc Vdc Adc Apk Adc W _C
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
qJC
0.7
_C/W
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
40 AMPERES
NPN SILICON POWER METAL
TRANSISTOR 200 VOLTS − 250 WATTS
BASE 1
NPN
COLLECTOR CASE
EMITTER 2
MARKING DIAGRAM
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