SLA5227

SANKEN ELECTRIC http://www.sanken-ele.co.jp Oct.2010 Features Built-in IGBT and diode bridge of partial switching PFC circuit Enable to reduce mounting area Low saturation voltage IGBT VCE(sat) = 1.7V max Low saturation voltage diode bridge VF = 1.1V max The clip lead is adopted for inner lead. Low inductance, low resistance, high current capability The smoke generation and explosion are less likely to occur in case of destruction. Package Equivalent circuit Applications Partial switching PFC Characteristic Collector to Emitter Voltage Gate to Emitter Voltage Continuous Collector Current Pulsed Collector Current Diode Peak Reverse Voltage Diode Forward Current Diode Peak Surge Forward Current Diode I2t Limiting Value Maximum Allowable Power Dissipation Thermal Resistance Isolation Voltage Operating Junction Temperature Storage Temperature 1. PW 10μs, Duty 1% 3. 1ms PW 10ms Absolute maximum ratings Symbol Ratings (Ta=25℃) Unit VCES 600 V VGE ±30 V IC(DC) 30 A IC (pulse) 1 100 A VRM 600 V IF IFSM 2 I2t 3 25 A 200 A 200 A2s PT 4 θj-a 4 θj-c 4 5 (No.Fin Ta=25°C) 92 (Tc=25°C) 25 (Junction-to-Ambient) 1.36 ( Junction-to-Case ) °C /W °C /W θj-c IGBT θj-c Di VISO Tj 3.91 ( Junction-to-Case,IGBT 1 Element Operation ) 8.33 ( Junction-to-Case,Di 1 Element Operation ) 1500 ( Between Fin and Lead Pin, 1minute AC) 150 °C /W °C /W Vrms °C Tstg -40 150 °C 2. PW 10ms, Half sinewave, 1shot 4. All Element Operation The information included herein is...