AW5008M1FDR

AW5008M1FDR Jan 2019 V1.1 Low Noise Amplifier for LTE Middle Band FEATURES GENERAL DESCRIPTION  Operating frequency 1805MHz to 2200MHz  Noise figure(NF) =0.9dB  High power gain =16dB  In band IIP3=+4.0dBm  Input 1dB compression point=-3dBm  Supply voltage: 1.5V to 3.1V  Supply current 8.2mA The AW5008M1 is a Low Noise Amplifier for LTE receiver applications. The AW5008M1 requires l tia only one external input matching inductor, reduces assembly complexity and the PCB area, enabling a cost-effective solution.  Input and output DC decoupled  Requires only one input matching inductor n The AW5008M1 achieves low noise figure, high linearity, high gain, over a wide range of supply  Integrated matching for the output  FCDFN 1.1mmX0.7mmX0.37mm -6L package  2kV HBM ESD protection (including RFIN and RFOUT pin) APPLICATIONS e voltages from 1.5V up to 3.1V. All these features make AW5008M1 an excellent choice for LTE LNA fid as it improves sensitivity with low noise figure and high gain, provides better immunity against jammer signals with high linearity, reduces filtering requirement of preceding stage and hence reduces  Cell phones  Tablets  Other RF front-end modules nthe overall cost. oThe AW5008M1 is available in a small lead-free, RoHS-Compliant, FCDFN 1.1mmX0.7mmX0.37 C TYPICAL APPLICATION CIRCUIT mm -6L package. icGND 1 inSUPPLY VOLTAGE R1 VCC 2 C1 (optional) w RF OUTPUT RFOUT 3 a AW5008M1 BIAS C1, R1 Closed to LNA EN 6 LOGIC CONTROL ...