PNP NMOSFET. AW3112 Datasheet

AW3112 NMOSFET. Datasheet pdf. Equivalent

AW3112 Datasheet
Recommendation AW3112 Datasheet
Part AW3112
Description PNP NMOSFET
Feature AW3112; AW3112 Feb 2019 V1.2 30V/3A PNP Low VCESAT BJT, Integrated with 20V Trench NMOSFET FEATURES GENERA.
Manufacture AWINIC
Datasheet
Download AW3112 Datasheet




AWINIC AW3112
AW3112
Feb 2019 V1.2
30V/3A PNP Low VCESAT BJT, Integrated with
20V Trench NMOSFET
FEATURES
GENERAL DESCRIPTION
l
Low collector-emitter saturation voltage
Large current capability
High current gain
DFN2mm×2mm-6L Package
tia The AW3112 is 30V PNP power bipolar transistor
using epitaxial planar technology, integrating with a
20V trench NMOSFET as a switch transistor of
base.
RoHS compliant
n The AW3112 has low VCESAT and high current gain.
It is suitable for linear regulator in battery charging
APPLICATIONS
Battery Charging
Portable Device Power Management
application.
e AW3112 is available in DFN2mm×2mm×0.75mm-
6L package. It is specified among the industrial
fid temperature range of -40and +85
PIN CONFIGURATION AND MARKING
n AW3112DNR Top View
(DFN2×2-6L)
o 6(C)
5(C)
4(S)
AW3112DNR Marking
(DFN2×2-6L)
C
ic
in 7(C)
8(B/D)
AW12
XXYY
1(E)
2(E)
w
a
3(G)
AW12-AW3112DNR
XXYY- Production Tracing Code
Figure 1 Pin Configuration and Top Mark
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Copyright © 2015 SHANGHAI AWINIC TECHNOLOGY CO., LTD



AWINIC AW3112
PIN DEFINITION
AW3112
Feb 2019 V1.2
No.
NAME
DESCRIPTION
1
E
Emitter of 30V PNP BJT transistor.
2
E
3
G
Gate of 20V NMOS transistor.
l
4
5
6
7
S
C
C
C
tia Source of 20V NMOS transistor.
Collector of 30V PNP BJT transistor.
Exposed pad, should be connected to pin5/6 on PCB board.
8
B/D
n Exposed pad, the junction of PNP base and NMOS drain, should be
floated on PCB board.
TYPICAL APPLICATION CIRCUITS
e
VBUS
330kΩ
fid 39kΩ
VCDT
n 3.3kΩ
CHR_LDO
o
1µF
1 µF
C E(1,2)
G(3)
ic B/D(8)
AW3112
in
C(5,6,7)
S(4)
VDRV
PMU
ISENS
aw
R SENSE
0. 2Ω
Battery
BATSENS
Figure 2 AW3112 Application Circuit with MTK PMU, e.g. MT6323 MT6329NOTE1
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Copyright © 2015 SHANGHAI AWINIC TECHNOLOGY CO., LTD



AWINIC AW3112
AW3112
Feb 2019 V1.2
Note1: The red route in the figure above indicates the large current path, please pay attention to the path width
on PCB board. In general, a factor of 40mil/A between path width and current is suitable. For example, the
current set is 0.8A, then the path width should not less than 40×0.8=32mil.
ORDERING INFORMATION
Part
Number
Temperature
Package
AW3112
DNR
-40℃~85
DFN2mm
×2mm-6L
Marking
AW12
Moisture
Sensitivity
Level
MSL3
Environmental
Information
RoHS+HF
Delivery Form
l
tia 3000 units/
Tape and Reel
AW3112
n
ABSOLUTE MAXIMUM RATINGS(NOTE1)
Shipping
R: Tape & Reel
e Package Type
fid DN: DFN
Symbol
30V PNP BJT
Vcbo
Parameter
n
o Collector-Base Voltage
Value
-40
Unit
V
Vceo
Collector-Emitter Voltage
-32
V
Vebo
Ic
C Emitter-base Voltage
Collector Current
-6
V
-3
A
Icm
20V NMOSFET
Vdss
icCollector Peak Current
Drain-source voltage
Vgss
Id
Idp
in
Gate-source voltage
Drain current
Drain peak current
Temperature, Dissipation and Thermal Resistance
Ptot
wTj
a Tstg
Total Dissipation
Junction Temperature
Storage Temperature
-6
A
20
V
±8
V
180
mA
360
mA
1.5
W
150
-65~150
TL
Lead Temperature
260
θJA
Thermal Resistance
85.6
℃/W
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