PDP Trench IGBT
PD - 97484
IRG7R313UPbF
PDP TRENCH IGBT
Features
Key Parameters
l Advanced Trench IGBT Technology
VCE min
330
V
l...
Description
PD - 97484
IRG7R313UPbF
PDP TRENCH IGBT
Features
Key Parameters
l Advanced Trench IGBT Technology
VCE min
330
V
l Optimized for Sustain and Energy Recovery
VCE(ON) typ. @ IC = 20A
1.35
V
circuits in PDP applications l Low VCE(on) and Energy per Pulse (EPULSETM)
for improved panel efficiency
IRP max @ TC= 25°C TJ max
160
A
150
°C
l High repetitive peak current capability
l Lead Free package
C
C
G
E
n-channel
E C G
D-Pak IRG7R313UPbF
G Gate
C Collector
E Emitter
Description
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current
capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP
applications.
Absolute Maximum Ratings
Parameter
VGE IC @ TC = 25°C IC @ TC = 100°C IRP @ TC = 25°C PD @TC = 25°C PD @TC = 100°C
Gate-to-Emitter Voltage Continuous Collector Current, VGE @ 15V Continuous Collector, VGE @ 15V
c Repetitive Peak Current
Power Dissipation Power Dissipation Linear Derating Factor
TJ TSTG
Operating Junction and Storage Temperature Range Soldering Temperature for 10 seconds
Thermal Resistance
Parameter
RθJC
d Junction-to-Case
Max. ±30 40 20 160 78 31 0.63 -40 to + 150
300
Typ. –––
Max. 1.6
Units V A W
W/°C °C
Units °C/W
...
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