C33725

BC337, BC337-25, BC337-40 Amplifier Transistors NPN Silicon Features These are Pb−Free Devices MAXIMUM RATINGS Rating Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Symbol VCEO VCBO VEBO IC PD Value 45 50 5.0 800 625 5.0 Unit Vdc Vdc Vdc mAdc mW mW/°C Total Device Dissipation @ TC = 25°C PD Derate above 25°C 1.5 W 12 mW/°C Operating and Storage Junction Temperature Range TJ, Tstg −55 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. http://onsemi.com COLLECTOR 1 2 BASE 3 EMITTER TO−92 CASE 29 STYLE 17 123 STRAIGHT LEAD BULK PACK 1 2 3 BENT LEAD TAPE & REEL AMMO PACK MARKING DIAGRAM BC33 7−xx AYWW G G *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. BC337−xx = Device Code (Refer to page 4) A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information...