Amplifier Transistors. C33716 Datasheet

C33716 Transistors. Datasheet pdf. Equivalent

C33716 Datasheet
Recommendation C33716 Datasheet
Part C33716
Description Amplifier Transistors
Feature C33716; BC337, BC337−16, BC337−25, BC337−40, BC338−25 Amplifier Transistors NPN Silicon Features • Pb−Free.
Manufacture ON Semiconductor
Datasheet
Download C33716 Datasheet




ON Semiconductor C33716
BC337, BC337−16,
BC337−25, BC337−40,
BC338−25
Amplifier Transistors
NPN Silicon
Features
Pb−Free Package is Available*
MAXIMUM RATINGS
Rating
Symbol BC337 BC338 Unit
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
Total Device Dissipation
@ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
45
25
50
30
5.0
800
625
5.0
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
PD
TJ, Tstg
W
1.5
mW/°C
12
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−55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance,
Junction−to−Ambient
RqJA
200
°C/W
Thermal Resistance,
Junction−to−Case
RqJC
83.3
°C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
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COLLECTOR
1
2
BASE
3
EMITTER
MARKING
DIAGRAM
BC33
xxxx
YWW
TO−92 (TO−226)
CASE 29
xxxx = Specific Device Code
Y
= Year
WW = Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2004
1
July, 2004 − Rev. 4
Publication Order Number:
BC337/D



ON Semiconductor C33716
BC337, BC337−16, BC337−25, BC337−40, BC338−25
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = 10 mA, IB = 0)
BC338
BC337
Collector −Emitter Breakdown Voltage
(IC = 100 mA, IE = 0)
BC338
BC337
Emitter −Base Breakdown Voltage
(IE = 10 mA, IC = 0)
Collector Cutoff Current
(VCB = 30 V, IE = 0)
(VCB = 20 V, IE = 0)
Collector Cutoff Current
(VCE = 45 V, VBE = 0)
(VCE = 25 V, VBE = 0)
Emitter Cutoff Current
(VEB = 4.0 V, IC = 0)
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mA, VCE = 1.0 V)
(IC = 300 mA, VCE = 1.0 V)
BC337
BC338
BC337
BC338
BC337
BC337−16
BC337−25/BC338−25
BC337−40
Base−Emitter On Voltage
(IC = 300 mA, VCE = 1.0 V)
Collector −Emitter Saturation Voltage
(IC = 500 mA, IB = 50 mA)
SMALL−SIGNAL CHARACTERISTICS
Output Capacitance
(VCB = 10 V, IE = 0, f = 1.0 MHz)
Current −Gain − Bandwidth Product
(IC = 10 mA, VCE = 5.0 V, f = 100 MHz)
Symbol Min
Typ
Max Unit
V(BR)CE
O
45
25
Vdc
V(BR)CE
S
50
30
Vdc
V(BR)EB
5.0
O
Vdc
ICBO
nAdc
100
100
ICES
nAdc
100
100
IEBO
100 nAdc
hFE
100
630
100
250
160
400
250
630
60
VBE(on)
1.2
Vdc
VCE(sat)
0.7
Vdc
Cob
15
pF
fT
210
MHz
1.0
0.7
D = 0.5
0.5
0.3
0.2
0.2
0.1
0.1 0.05
0.07 0.02
0.05
0.03
0.01
0.02
SINGLE PULSE
SINGLE PULSE
0.01
0.001 0.002
0.005 0.01 0.02
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.05 0.1 0.2
0.5 1.0 2.0
t, TIME (SECONDS)
Figure 1. Thermal Response
qJC(t) = (t) qJC
qJC = 100°C/W MAX
qJA(t) = r(t) qJA
qJA = 375°C/W MAX
D CURVES APPLY FOR
POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) qJC(t)
5.0 10 20
50 100
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ON Semiconductor C33716
BC337, BC337−16, BC337−25, BC337−40, BC338−25
1000
1000
1.0 s
1.0 ms
TJ = 135°C
VCE = 1 V
100 ms
TJ = 25°C
dc
TC = 25°C
dc
100
TA = 25°C
100
10
1.0
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
(APPLIES BELOW RATED VCEO)
3.0
10
30
VCE, COLLECTOR−EMITTER VOLTAGE
10
100
0.1
Figure 2. Active Region − Safe Operating Area
1.0
10
100
1000
IC, COLLECTOR CURRENT (MA)
Figure 3. DC Current Gain
1.0
TJ = 25°C
0.8
0.6
0.4
IC = 10 mA
100 mA 300 mA
500 mA
0.2
0
0.01
0.1
1
10
100
IB, BASE CURRENT (mA)
Figure 4. Saturation Region
1.0
TA = 25°C
0.8
0.6
VBE(sat) @ IC/IB = 10
VBE(on) @ VCE = 1 V
0.4
0.2
VCE(sat) @ IC/IB = 10
0
1
10
100
1000
IC, COLLECTOR CURRENT (mA)
Figure 5. “On” Voltages
100
+1
qVC for VCE(sat)
0
10
−1
−2
qVB for VBE
1
1
10
100
1000
0.1
IC, COLLECTOR CURRENT (mA)
Figure 6. Temperature Coefficients
Cib
Cob
1
10
100
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitances
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