BC337, BC337−16, BC337−25, BC337−40, BC338−25
Amplifier Transistors
NPN Silicon
Features
• Pb−Free Package is Availabl...
BC337, BC337−16, BC337−25, BC337−40, BC338−25
Amplifier
Transistors
NPN Silicon
Features
Pb−Free Package is Available*
MAXIMUM RATINGS
Rating
Symbol BC337 BC338 Unit
Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Total Device Dissipation
@ TA = 25°C Derate above 25°C
VCEO VCBO VEBO
IC PD
45
25
50
30
5.0
800
625 5.0
Vdc Vdc Vdc mAdc mW mW/°C
Total Device Dissipation @ TC = 25°C Derate above 25°C
Operating and Storage Junction Temperature Range
PD TJ, Tstg
W
1.5
mW/°C
12
www.DataSheet4U.com
−55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient
RqJA
200
°C/W
Thermal Resistance, Junction−to−Case
RqJC
83.3
°C/W
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
http://onsemi.com
COLLECTOR 1
2 BASE
3 EMITTER
MARKING DIAGRAM
BC33 xxxx YWW
TO−92 (TO−226) CASE 29
xxxx = Specific Device Code
Y
= Year
WW = Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semico...
