Silicon Transistor. SS8050BBU Datasheet

SS8050BBU Transistor. Datasheet pdf. Equivalent

SS8050BBU Datasheet
Recommendation SS8050BBU Datasheet
Part SS8050BBU
Description NPN Epitaxial Silicon Transistor
Feature SS8050BBU; SS8050 — NPN Epitaxial Silicon Transistor November 2014 SS8050 NPN Epitaxial Silicon Transistor F.
Manufacture Fairchild Semiconductor
Datasheet
Download SS8050BBU Datasheet




Fairchild Semiconductor SS8050BBU
November 2014
SS8050
NPN Epitaxial Silicon Transistor
Features
• 2 W Output Amplifier of Portable Radios in Class B Push-pull Operation.
• Complimentary to SS8550
• Collector Current: IC = 1.5 A
1
TO-92
1. Emitter 2. Base 3. Collector
Ordering Information
Part Number
SS8050BBU
SS8050CBU
SS8050CTA
SS8050DBU
SS8050DTA
Top Mark
S8050
S8050
S8050
S8050
S8050
Package
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
Packing Method
Bulk
Bulk
Ammo
Bulk
Ammo
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Value
Unit
VCBO
VCEO
VEBO
IC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Junction Temperature
Storage Temperature
40
V
25
V
6
V
1.5
A
150
°C
-65 to 150
°C
© 2004 Fairchild Semiconductor Corporation
SS8050 Rev. 1.1.0
www.fairchildsemi.com



Fairchild Semiconductor SS8050BBU
Thermal Characteristics(1)
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Value
Unit
Power Dissipation
PD
Derate Above 25°C
1
W
8
mW/°C
RθJA
Thermal Resistance, Junction-to-Ambient
125
°C/W
Note:
1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
Min.
BVCBO Collector-Base Breakdown Voltage IC = 100 μA, IE = 0
40
BVCEO Collector-Emitter Breakdown Voltage IC = 2 mA, IB = 0
25
BVEBO Emitter-Base Breakdown Voltage
IE = 100 μA, IC = 0
6
ICBO
Collector Cut-Off Current
VCB = 35 V, IE = 0
IEBO
Emitter Cut-Off Current
VEB = 6 V, IC = 0
hFE1
VCE = 1 V, IC = 5 mA
45
hFE2
DC Current Gain
VCE = 1 V, IC = 100 mA 85
hFE3
VCE = 1 V, IC = 800 mA 40
VCE(sat) Collector-Emitter Saturation Voltage IC = 800 mA, IB = 80 mA
VBE(sat) Base-Emitter Saturation Voltage
IC = 800 mA, IB = 80 mA
VBE(on) Base-Emitter On Voltage
VCE = 1 V, IC = 10 mA
Cob
Output Capacitance
VCB = 10 V, IE = 0,
f = 1 MHz
fT
Current Gain Bandwidth Product
VCE = 10 V, IC = 50 mA 100
Typ.
9.0
Max.
100
100
300
0.5
1.2
1
Unit
V
V
V
nA
nA
V
V
V
pF
MHz
hFE Classification
Classification
hFE2
B
85 ~ 160
C
120 ~ 200
D
160 ~ 300
© 2004 Fairchild Semiconductor Corporation
SS8050 Rev. 1.1.0
2
www.fairchildsemi.com



Fairchild Semiconductor SS8050BBU
Typical Performance Characteristics
0.5
I = 3.0mA
B
0.4
I = 2.5mA
B
0.3
I = 2.0mA
B
I = 1.5mA
0.2
B
I = 1.0mA
B
0.1
I = 0.5mA
B
0
0.4
0.8
1.2
1.6
2.0
V [V], COLLECTOR-EMITTER VOLTAGE
CE
Figure 1. Static Characteristic
10000
1000
V (sat)
BE
I = 10 I
C
B
1000
100
V = 1V
CE
10
1
0.1
1
10
100
1000
I [mA], COLLECTOR CURRENT
C
Figure 2. DC Current Gain
100
V = 1V
CE
10
100
V (sat)
CE
10
0.1
1
10
100
1000
I [mA], COLLECTOR CURRENT
C
Figure 3. Base-Emitter Saturation Voltage and
Collector-Emitter Saturation Voltage
1000
100
I =0
E
f = 1MHz
1
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V [V], BASE-EMITTER VOLTAGE
BE
Figure 4. Base-Emitter On Voltage
1000
100
V = 10V
CE
10
10
1
1
10
100
V [V], COLLECTOR-BASE VOLTAGE
CB
Figure 5. Collector Output Capacitance
1
1
10
100
400
I [mA], COLLECTOR CURRENT
C
Figure 6. Current Gain Bandwidth Product
© 2004 Fairchild Semiconductor Corporation
SS8050 Rev. 1.1.0
3
www.fairchildsemi.com







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