Document
SS8050 — NPN Epitaxial Silicon Transistor
November 2014
SS8050 NPN Epitaxial Silicon Transistor
Features
• 2 W Output Amplifier of Portable Radios in Class B Push-pull Operation. • Complimentary to SS8550 • Collector Current: IC = 1.5 A
1
TO-92
1. Emitter 2. Base 3. Collector
Ordering Information
Part Number SS8050BBU SS8050CBU SS8050CTA SS8050DBU SS8050DTA
Top Mark S8050 S8050 S8050 S8050 S8050
Package TO-92 3L TO-92 3L TO-92 3L TO-92 3L TO-92 3L
Packing Method Bulk Bulk Ammo Bulk Ammo
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Value
Unit
VCBO VCEO VEBO
IC TJ TSTG
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Junction Temperature Storage Temperature
40
V
25
V
6
V
1.5
A
150
°C
-65 to 150
°C
© 2004 Fairchild Semiconductor Corporation SS8050 Rev. 1.1.0
www.fairchildsemi.com
SS8050 — NPN Epitaxial Silicon Transistor
Thermal Characteristics(1)
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Value
Unit
Power Dissipation
PD
Derate Above 25°C
1
W
8
mW/°C
RθJA
Thermal Resistance, Junction-to-Ambient
125
°C/W
Note: 1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
Min.
BVCBO Collector-Base Breakdown Voltage IC = 100 μA, IE = 0
40
BVCEO Collector-Emitter Breakdown Voltage IC = 2 mA, IB = 0
25
BVEBO Emitter-Base Breakdown Voltage
IE = 100 μA, IC = 0
6
ICBO
Collector Cut-Off Current
VCB = 35 V, IE = 0
IEBO
Emitter Cut-Off Current
VEB = 6 V, IC = 0
hFE1
VCE = 1 V, IC = 5 mA
45
hFE2
DC Current Gain
VCE = 1 V, IC = 100 mA 85
hFE3
VCE = 1 V, IC = 800 mA 40
VCE(sat) Collector-Emitter Saturation Voltage IC = 800 mA, IB = 80 mA
VBE(sat) Base-Emitter Saturation Voltage
IC = 800 mA, IB = 80 mA
VBE(on) Base-Emitter On Voltage
VCE = 1 V, IC = 10 mA
Cob
Output Capacitance
VCB = 10 V, IE = 0, f = 1 MHz
fT
Current Gain Bandwidth Product
VCE = 10 V, IC = 50 mA 100
Typ. 9.0
Max.
100 100 300 0.5 1.2
1
Unit V V V nA nA
V V V pF MHz
hFE Classification
Classification hFE2
B 85 ~ 160
C 120 ~ 200
D 160 ~ 300
© 2004 Fairchild Semiconductor Corporation
SS8050 Rev. 1.1.0
2
www.fairchildsemi.com
SS8050 — NPN Epitaxial Silicon Transistor
Typical Performance Characteristics
I [A], COLLECTOR CURRENT
C
0.5
I = 3.0mA
B
0.4
I = 2.5mA
B
0.3
I = 2.0mA
B
I = 1.5mA
0.2
B
I = 1.0mA
B
0.1
I = 0.5mA
B
0
0.4
0.8
1.2
1.6
2.0
V [V], COLL.