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SS8050CBU Dataheets PDF



Part Number SS8050CBU
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description NPN Epitaxial Silicon Transistor
Datasheet SS8050CBU DatasheetSS8050CBU Datasheet (PDF)

SS8050 — NPN Epitaxial Silicon Transistor November 2014 SS8050 NPN Epitaxial Silicon Transistor Features • 2 W Output Amplifier of Portable Radios in Class B Push-pull Operation. • Complimentary to SS8550 • Collector Current: IC = 1.5 A 1 TO-92 1. Emitter 2. Base 3. Collector Ordering Information Part Number SS8050BBU SS8050CBU SS8050CTA SS8050DBU SS8050DTA Top Mark S8050 S8050 S8050 S8050 S8050 Package TO-92 3L TO-92 3L TO-92 3L TO-92 3L TO-92 3L Packing Method Bulk Bulk Ammo Bulk Amm.

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SS8050 — NPN Epitaxial Silicon Transistor November 2014 SS8050 NPN Epitaxial Silicon Transistor Features • 2 W Output Amplifier of Portable Radios in Class B Push-pull Operation. • Complimentary to SS8550 • Collector Current: IC = 1.5 A 1 TO-92 1. Emitter 2. Base 3. Collector Ordering Information Part Number SS8050BBU SS8050CBU SS8050CTA SS8050DBU SS8050DTA Top Mark S8050 S8050 S8050 S8050 S8050 Package TO-92 3L TO-92 3L TO-92 3L TO-92 3L TO-92 3L Packing Method Bulk Bulk Ammo Bulk Ammo Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Parameter Value Unit VCBO VCEO VEBO IC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Junction Temperature Storage Temperature 40 V 25 V 6 V 1.5 A 150 °C -65 to 150 °C © 2004 Fairchild Semiconductor Corporation SS8050 Rev. 1.1.0 www.fairchildsemi.com SS8050 — NPN Epitaxial Silicon Transistor Thermal Characteristics(1) Values are at TA = 25°C unless otherwise noted. Symbol Parameter Value Unit Power Dissipation PD Derate Above 25°C 1 W 8 mW/°C RθJA Thermal Resistance, Junction-to-Ambient 125 °C/W Note: 1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. Electrical Characteristics Values are at TA = 25°C unless otherwise noted. Symbol Parameter Conditions Min. BVCBO Collector-Base Breakdown Voltage IC = 100 μA, IE = 0 40 BVCEO Collector-Emitter Breakdown Voltage IC = 2 mA, IB = 0 25 BVEBO Emitter-Base Breakdown Voltage IE = 100 μA, IC = 0 6 ICBO Collector Cut-Off Current VCB = 35 V, IE = 0 IEBO Emitter Cut-Off Current VEB = 6 V, IC = 0 hFE1 VCE = 1 V, IC = 5 mA 45 hFE2 DC Current Gain VCE = 1 V, IC = 100 mA 85 hFE3 VCE = 1 V, IC = 800 mA 40 VCE(sat) Collector-Emitter Saturation Voltage IC = 800 mA, IB = 80 mA VBE(sat) Base-Emitter Saturation Voltage IC = 800 mA, IB = 80 mA VBE(on) Base-Emitter On Voltage VCE = 1 V, IC = 10 mA Cob Output Capacitance VCB = 10 V, IE = 0, f = 1 MHz fT Current Gain Bandwidth Product VCE = 10 V, IC = 50 mA 100 Typ. 9.0 Max. 100 100 300 0.5 1.2 1 Unit V V V nA nA V V V pF MHz hFE Classification Classification hFE2 B 85 ~ 160 C 120 ~ 200 D 160 ~ 300 © 2004 Fairchild Semiconductor Corporation SS8050 Rev. 1.1.0 2 www.fairchildsemi.com SS8050 — NPN Epitaxial Silicon Transistor Typical Performance Characteristics I [A], COLLECTOR CURRENT C 0.5 I = 3.0mA B 0.4 I = 2.5mA B 0.3 I = 2.0mA B I = 1.5mA 0.2 B I = 1.0mA B 0.1 I = 0.5mA B 0 0.4 0.8 1.2 1.6 2.0 V [V], COLL.


SS8050BBU SS8050CBU SS8050CTA


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