4435

FDS4435 October 2001 FDS4435 30V P-Channel PowerTrench® MOSFET General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V). Applications Power management Load switch Battery protection Features –8.8 A, –30 V RDS(ON) = 20 mΩ @ VGS = –10 V RDS(ON) = 35 mΩ @ VGS = –4.5 V Low gate charge (17nC typical) Fast switching speed High performance trench technology for extremely low RDS(ON) High power and current handling capability DD DD DD DD SO-8 Pin 1SO-8 SS SS SS GG Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS V GSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Power Dissipation for Single Operation (Note 1a) (Note 1a) (Note 1b) TJ, TSTG (Note 1c) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJA Thermal Resistance, Junction-to-Ambient RθJ C Thermal Resistance, Junction-to-Case (Note 1a) (Note 1c) (Note 1) Package Marking and Ordering Information Device Marking Device Reel Size FDS4435 FDS4435 13’’ ©2001 Fairchild Semiconductor Corporation 5 4 6 3 7 2 8 1 Ratings –30 ±25 –8.8 –50 2.5 1.2 1 –55 to +175 50 125 25 Tape width 12mm Units V V A W °C °C/W °C/W °C/W Quantity 2500 units FDS4435 Rev F1(W) FD...