N-Channel MOSFET. FCPF190N65FL1-F154 Datasheet

FCPF190N65FL1-F154 MOSFET. Datasheet pdf. Equivalent

FCPF190N65FL1-F154 Datasheet
Recommendation FCPF190N65FL1-F154 Datasheet
Part FCPF190N65FL1-F154
Description N-Channel MOSFET
Feature FCPF190N65FL1-F154; MOSFET – N-Channel, SUPERFET) II, FRFET) 650 V, 20.6 A, 190 mW FCPF190N65FL1-F154 Description SUPERF.
Manufacture ON Semiconductor
Datasheet
Download FCPF190N65FL1-F154 Datasheet




ON Semiconductor FCPF190N65FL1-F154
MOSFET – N-Channel,
SUPERFET) II, FRFET)
650 V, 20.6 A, 190 mW
FCPF190N65FL1-F154
Description
SUPERFET II MOSFET is ON Semiconductor’s brandnew high
voltage superjunction (SJ) MOSFET family that is utilizing charge
balance technology for outstanding low onresistance and lower gate
charge performance. This advanced technology is tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate. Consequently, SUPERFET II MOSFET
is very suitable for the various power system for miniaturization and
higher efficiency. SUPERFET II FRFET MOSFET’s optimized
reverse recovery performance of body diode can remove additional
component and improve system reliability.
Features
700 V @ TJ = 150°C
RDS(on) = 168 mW (Typ.)
Ultra Low Gate Charge (Typ. Qg = 60 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 304 pF)
100% Avalanche Tested
These Devices are PbFree and are RoHS Compliant
Applications
Computing / Display Power Supplies
Telecom / Server Power Supplies
Industrial Power Supplies
Lighting / Charger / Adapter
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VDSS
650 V
RDS(ON) MAX
190 mW @ 10 V
ID MAX
20.6 A
D
G
S
MOSFET
GDS
TO220F Ultra Narrow Lead
CASE 221BN
MARKING DIAGRAM
$Y&Z&3&K
FCPF
190N65F
© Semiconductor Components Industries, LLC, 2020
December, 2020 Rev. 0
$Y
&Z
&3
&K
FCPF190N65F
= ON Semiconductor Logo
= Assembly Plant Code
= Data Code (Year & Week)
= Lot
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
1
Publication Order Number:
FCPF190N65FL1F154/D



ON Semiconductor FCPF190N65FL1-F154
FCPF190N65FL1F154
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise noted)
Symbol
Parameter
Value
Unit
VDSS
VGSS
Drain to Source Voltage
Gate to Source Voltage
DC
AC (f > 1 Hz)
650
V
±20
V
±30
ID
Drain Current
Continuous (TC = 25°C)
20.6
Continuous (TC = 100°C)
13.1
IDM
Drain Current
Pulsed (Note 1)
61.8
EAS
Single Pulsed Avalanche Energy (Note 2)
400
IAS
Avalanche Current (Note 2)
4
EAR
Repetitive Avalanche Energy (Note 1)
0.39
dv/dt
MOSFET dv/dt
100
A
A
mJ
A
mJ
V/ns
Peak Diode Recovery dv/dt (Note 3)
50
PD
Power Dissipation
(TC = 25°C)
Derate Above 25°C
39
W
0.31
W/°C
TJ, TSTG Operating and Storage Temperature Range
55 to +150
°C
TL
Maximum Lead Temperature for Soldering, 1/8from Case for 5 Seconds
300
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive rating: pulse width limited by maximum junction temperature.
2. IAS = 4A, RG = 25 W, starting TJ = 25°C.
3. ISD 10 A, di/dt 200 A/ms, VDD 380 V, starting TJ = 25°C.
THERMAL CHARACTERISTICS
Symbol
Parameter
RqJC
RqJA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
Value
3.2
62.5
Unit
_C/W
_C/W
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Marking
FCPF190N65FL1F154
FCPF190N65F
Package
TO220F
(PbFree)
Shipping
50 Units / Tube
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2



ON Semiconductor FCPF190N65FL1-F154
FCPF190N65FL1F154
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
OFF CHARACTERISTICS
BVDSS
Drain to Source Breakdown Voltage
VGS = 0 V, ID = 10 mA, TJ = 25_C
650
V
VGS = 0 V, ID = 10 mA, TJ = 150_C
700
V
DBVDSS / DTJ Breakdown Voltage Temperature
Coefficient
ID = 10 mA, Referenced to 25_C
0.72
V/_C
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ON CHARACTERISTICS
VDS = 650 V, VGS = 0 V
VDS = 520 V, VGS = 0 V, TC = 125_C
VGS = ±20 V, VDS = 0 V
10
mA
60
±100
mA
VGS(th)
Gate Threshold Voltage
RDS(on)
Static Drain to Source On Resistance
gFS
Forward Transconductance
DYNAMIC CHARACTERISTICS
VGS = VDS, ID = 2 mA
VGS = 10 V, ID = 10 A
VDS = 20 V, ID = 10 A
3
5
V
168
190
mW
18
S
Ciss
Coss
Crss
Coss
Coss(eff.)
Qg(tot)
Qgs
Qgd
ESR
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge at 10 V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance
VDS = 100 V, VGS = 0 V, f = 1 MHz
VDS = 380 V, VGS = 0 V, f = 1 MHz
VDS = 0 V to 400 V, VGS = 0 V
VDS = 380 V, ID = 10 A, VGS = 10 V
(Note 4)
f = 1 MHz
2350 3055
pF
77
100
pF
0.68
pF
44
pF
304
pF
60
78
nC
12
nC
25
nC
0.6
W
SWITCHING CHARACTERISTICS
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
SOURCEDRAIN DIODE CHARACTERISTICS
VDD = 380 V, ID = 10 A, VGS = 10 V,
Rg = 4.7 W
(Note 4)
25
60
ns
11
32
ns
62
134
ns
4.2
18
ns
IS
Maximum Continuous Source to Drain Diode Forward Current
20.6
A
ISM
Maximum Pulsed Source to Drain Diode Forward Current
61.8
A
VSD
Source to Drain Diode Forward Voltage VGS = 0 V, ISD = 10 A
1.2
V
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VDD = 400 V, ISD = 10 A,
dIF/dt = 100 A/ms
105
ns
515
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Essentially independent of operating temperature.
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