N-Channel MOSFET. FCPF260N60E-F154 Datasheet

FCPF260N60E-F154 MOSFET. Datasheet pdf. Equivalent

FCPF260N60E-F154 Datasheet
Recommendation FCPF260N60E-F154 Datasheet
Part FCPF260N60E-F154
Description N-Channel MOSFET
Feature FCPF260N60E-F154; MOSFET – N-Channel, SUPERFET) II 600 V, 15 A, 260 mW FCPF260N60E-F154 Description SUPERFET II MOSFET.
Manufacture ON Semiconductor
Datasheet
Download FCPF260N60E-F154 Datasheet




ON Semiconductor FCPF260N60E-F154
MOSFET – N-Channel,
SUPERFET) II
600 V, 15 A, 260 mW
FCPF260N60E-F154
Description
SUPERFET II MOSFET is ON Semiconductor’s brandnew high
voltage superjunction (SJ) MOSFET family that is utilizing charge
balance technology for outstanding low onresistance and lower gate
charge performance. This technology is tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate and higher avalanche energy.
Consequently, SUPERFET II MOSFET Easy drive series helps
manage EMI issues and allows for easier design implementation.
Features
650 V @ TJ = 150°C
Typ. RDS(on) = 220 mW
Ultra Low Gate Charge (Typ. Qg = 48 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 129 pF)
100% Avalanche Tested
These Devices are PbFree and are RoHS Compliant
Applications
Computing / Display Power Supplies
Telecom / Server Power Supplies
Industrial Power Supplies
Lighting / Charger / Adapter
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VDSS
600 V
RDS(ON) MAX
260 mW @ 10 V
ID MAX
15 A
D
G
S
MOSFET
GDS
TO220F Ultra Narrow Lead
CASE 221BN
MARKING DIAGRAM
$Y&Z&3&K
FCPF
260N60E
© Semiconductor Components Industries, LLC, 2020
December, 2020 Rev. 0
$Y
&Z
&3
&K
FCPF260N60E
= ON Semiconductor Logo
= Assembly Plant Code
= Data Code (Year & Week)
= Lot
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
1
Publication Order Number:
FCPF260N60EF154/D



ON Semiconductor FCPF260N60E-F154
FCPF260N60EF154
MOSFET MAXIMUM RATINGS (TC = 25°C, Unless otherwise noted)
Symbol
Parameter
Value
Unit
VDSS
VGSS
Drain to Source Voltage
Gate to Source Voltage
DC
AC (f > 1 Hz)
600
V
±20
V
±30
ID
IDM
EAS
IAS
EAR
dv/dt
Drain Current
Drain Current
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current (Note 2)
Repetitive Avalanche Energy (Note 1)
Peak Diode Recovery dv/dt (Note 3)
Continuous (TC = 25°C)
Continuous (TC = 100°C)
Pulsed (Note 1)
15*
9.5*
45*
292.5
3.0
1.56
20
A
A
mJ
A
mJ
V/ns
MOSFET dv/dt
100
PD
Power Dissipation
(TC = 25°C)
Derate Above 25°C
36
W
0.29
W/°C
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8from Case for 5 Seconds
55 to +150
°C
300
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
*Drain current limited by maximum junction temperature.
1. Repetitive rating: pulse width limited by maximum junction temperature.
2. IAS = 3 A, VDD = 50 V, RG = 25 W, starting TJ = 25°C.
3. ISD 7.5 A, di/dt 200 A/ms, VDD BVDSS, starting TJ = 25°C.
THERMAL CHARACTERISTICS
Symbol
Parameter
RqJC
RqJA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
Value
3.5
62.5
Unit
_C/W
_C/W
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Marking
FCPF260N60EF154
FCPF260N60E
Package
TO220F
(PbFree)
Shipping
50 Units / Tube
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2



ON Semiconductor FCPF260N60E-F154
FCPF260N60EF154
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
OFF CHARACTERISTICS
BVDSS
Drain to Source Breakdown Voltage
VGS = 0 V, ID = 10 mA, TJ = 25_C
600
V
VGS = 0 V, ID = 10 mA, TJ = 150_C
650
V
DBVDSS / DTJ Breakdown Voltage Temperature
Coefficient
ID = 10 mA, Referenced to 25_C
0.67
V/_C
BVDS
DrainSource Avalanche Breakdown
Voltage
VGS = 0 V, ID = 15 A
700
V
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
ON CHARACTERISTICS
VDS = 480 V, VGS = 0 V
VDS = 480 V, TC = 125_C
VGS = ±20 V, VDS = 0 V
1.0
mA
2.6
±100
nA
VGS(th)
Gate Threshold Voltage
RDS(on)
Static Drain to Source On Resistance
gFS
Forward Transconductance
DYNAMIC CHARACTERISTICS
VGS = VDS, ID = 250 mA
VGS = 10 V, ID = 7.5 A
VDS = 20 V, ID = 7.5 A
2.5
3.5
V
0.22 0.26
W
15.5
S
Ciss
Coss
Crss
Coss
Coss(eff.)
Qg(tot)
Qgs
Qgd
ESR
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge at 10 V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance
VDS = 25 V, VGS = 0 V, f = 1 MHz
1880 2500
pF
1330 1770
pF
85
130
pF
VDS = 380 V, VGS = 0 V, f = 1 MHz
32
pF
VDS = 0 V to 480 V, VGS = 0 V
129
pF
VDS = 380 V, ID = 7.5 A, VGS = 10 V
(Note 4)
48
62
nC
7.4
nC
17
nC
f = 1 MHz
5.8
W
SWITCHING CHARACTERISTICS
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
SOURCEDRAIN DIODE CHARACTERISTICS
VDD = 380 V, ID = 7.5 A, VGS = 10 V,
Rg = 4.7 W
(Note 4)
20
50
ns
11
32
ns
89
188
ns
13
36
ns
IS
Maximum Continuous Source to Drain Diode Forward Current
15
A
ISM
Maximum Pulsed Source to Drain Diode Forward Current
45
A
VSD
Source to Drain Diode Forward Voltage VGS = 0 V, ISD = 7.5 A
1.2
V
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VDD = 400 V, ISD = 7.5 A,
dIF/dt = 100 A/ms
270
ns
3.6
mC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Essentially independent of operating temperature typical characteristics.
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