FCPF380N60E

MOSFET – N-Channel, SUPERFET) II 600 V, 10.2 A, 380 mW FCPF380N60E-F154 Description SUPERFET II MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SUPERFET II MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation. Features 650 V @ TJ = 150°C Typ. RDS(on) = 320 mW Ultra Low Gate Charge (Typ. Qg = 34 nC) Low Effective Output Capacitance (Typ. Coss.eff = 97 pF) 100% Avalanche Tested These Devices are Pb−Free and are RoHS Compliant Applications Computing / Display Power Supplies Telecom / Server Power Supplies Industrial Power Supplies Lighting / Charger / Adapter www.onsemi.com VDSS 600 V RDS(ON) MAX 380 mW @ 10 V ID MAX 10.2 A D G S MOSFET GDS TO−220F Ultra Narrow Lead CASE 221BN MARKING DIAGRAM $Y&Z&3&K FCPF 380N60E © Semiconductor Components Industries, LLC, 2020 December, 2020 − Rev. 0 $Y &Z &3 &K FCPF380N60E = ON Semiconductor Logo = Assembly Plant Code = Data Code (Year & Week) = Lot = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. 1 Publication Order Number: FCPF380N60E−F154/D FCPF380N60E−F154 MOSFET MAXIMUM RAT...