Barrier Rectifier. Y2010DN Datasheet

Y2010DN Rectifier. Datasheet pdf. Equivalent

Y2010DN Datasheet
Recommendation Y2010DN Datasheet
Part Y2010DN
Description Schottky Barrier Rectifier
Feature Y2010DN; FYP2010DN — Schottky Barrier Rectifier FYP2010DN Schottky Barrier Rectifier Features • Low forward .
Manufacture Fairchild Semiconductor
Datasheet
Download Y2010DN Datasheet




Fairchild Semiconductor Y2010DN
FYP2010DN
Schottky Barrier Rectifier
Features
• Low forward voltage drop
• High frequency properties and switching speed
• Guard ring for over-voltage protection
August 2009
1.Anode
3.Anode
2. Cathode
123
TO-220
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
Parameter
VRRM
VR
IF(AV)
IFSM
Maximum Repetitive Reverse Voltage
Maximum DC Reverse Voltage
Average Rectified Forward Current
@ TC = 120°C
Non-repetitive Peak Surge Current (per diode)
60Hz Single Half-Sine Wave
TJ, TSTG Operating Junction and Storage Temperature
Thermal Characteristics
Symbol
Parameter
RθJC
Maximum Thermal Resistance, Junction to Case (per diode)
Electrical Characteristics (per diode)
Symbol
Parameter
VFM *
Maximum Instantaneous Forward Voltage
IF = 10A
IF = 10A
IF = 20A
IF = 20A
IRM *
Maximum Instantaneous Reverse Current
@ rated VR
* Pulse Test: Pulse Width=300μs, Duty Cycle=2%
TC = 25 °C
TC = 125 °C
TC = 25 °C
TC = 125 °C
TC = 25 °C
TC = 125 °C
Value
100
100
20
150
-65 to +150
Value
1.7
Value
0.77
0.65
-
0.75
0.1
20
Units
V
V
A
A
°C
Units
°C/W
Units
V
mA
© 2009 Fairchild Semiconductor Corporation
FYP2010DN Rev. B1
1
www.fairchildsemi.com



Fairchild Semiconductor Y2010DN
Typical Performance Characteristics
100
10
1
0.1
0.01
0.0
T =125 oC
J
TJ=75 oC
TJ=25 oC
0.5
1.0
1.5
Forward Voltage Drop, VF[V]
Figure 1. Typical Forward Voltage Characteristics
(per diode)
1000
900
800
700
600
500
400
300
200
TJ=25 oC
100
90
80
0
20
40
60
80
100
Reverse Voltage, VR[V]
Figure 3. Typical Junction Capacitance
(per diode)
25
DC
20
15
10
5
0
0
20
40
60
80
100 120 140 160
Case Temperature, TC[oC]
Figure 5. Forward Current Derating Curve
10
T =125 oC
1
J
T =75 oC
J
0.1
0.01
T =25 oC
J
1E-3
20
40
60
80
100
Reverse Voltage, VR[V]
Figure 2. Typical Reverse Current
vs. Reverse Voltage (per diode)
10
1
100µ
1m
10m
100m
1
10
Pulse Duration [s]
Figure 4. Thermal Impedance Characteristics
(per diode)
250
200
150
100
50
0
1
10
100
Number of Cycles @ 60Hz
Figure 6. Non-Repetive Surge Current
(per diode)
© 2009 Fairchild Semiconductor Corporation
FYP2010DN Rev. B1
2
www.fairchildsemi.com



Fairchild Semiconductor Y2010DN
Physical Dimensions
TO-220
© 2009 Fairchild Semiconductor Corporation
FYP2010DN Rev. B1
3
www.fairchildsemi.com







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)