Bridge Rectifiers. GBPC35005 Datasheet

GBPC35005 Rectifiers. Datasheet pdf. Equivalent

GBPC35005 Datasheet
Recommendation GBPC35005 Datasheet
Part GBPC35005
Description Bridge Rectifiers
Feature GBPC35005; Bridge Rectifiers (Glass Passivated) GBPC 12, 15, 25, 35 SERIES Features • Integrally Molded Heat−S.
Manufacture ON Semiconductor
Datasheet
Download GBPC35005 Datasheet




ON Semiconductor GBPC35005
Bridge Rectifiers
(Glass Passivated)
GBPC 12, 15, 25, 35 SERIES
Features
Integrally Molded HeatSink Provided Very Low Thermal
Resistance for Maximum Heat Dissipation
Surge Overload Ratings from 300 A to 400 A
Isolated Voltage from Case to Lead over 2500 V
UL Certified, UL #E258596
Terminals Finish Material
Silver (Solderable per MILSTD202, Method 208 for the wire
type GBPCW package)
Nickel for GBPC package
Mounting Torque: 20 inlbs Maximum
These are PbFree Devices
Suffix “W”
Wire Lead Structure
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GBPC
CASE 160AD
GBPCW
CASE 160AD
PIN ASSIGNMENT
GBPC
~
~+
GBPCW
ORDERING INFORMATION
See detailed ordering and shipping information on page 4 of
this data sheet.
© Semiconductor Components Industries, LLC, 2020
1
July, 2020 Rev. 2
Publication Order Number:
GBPC3510/D



ON Semiconductor GBPC35005
GBPC 12, 15, 25, 35 SERIES
SPECIFICATIONS
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified.) (Note 1)
Value
Symbol
VRRM
VRMS
VR
IF(AV)
Parameter
Maximum Repetitive Reverse Voltage
Maximum RMS Bridge Input Voltage
DC Reverse Voltage (Rated VR)
Average Rectified
Forward Current at
TC = 55_C
GBPC12
GBPC15
GBPC25
005 01
02
04
06
08
10 Units
50 100 200 400 600 800 1000
V
35
70 140 280 420 560 700
V
50 100 200 400 600 800 1000
V
12
A
15
25
GBPC35
35
IFSM
NonRepetitive Peak GBPC12, 15, 25
Forward Surge Current
300
A
8.3 ms Single
HalfSineWave
GBPC35
400
A
TSTG
Storage Temperature Range
55 to +150
_C
TJ
Operating Junction Temperature
55 to +150
_C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.
THERMAL CHARACTERISTICS (TA = 25°C, unless otherwise specified.)
Symbol
Parameter
PD
Power Dissipation
RθJC
Thermal Resistance, Junction to Case (Note 2)
2. With Heatsink.
Value
83.3
1.5
Unit
W
_C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified.)
Symbol
Parameter
Test Conditions
Value
Unit
VF
Forward Voltage Drop, per bridge
6.0 A
GBPC12
1.1 (Max)
V
7.5 A
GBPC15
12.5 A
GBPC25
17.5 A
GBPC35
IR
Reverse Current, per element at Rated VR
I2t
Rating for Fusing t < 8.35 ms
TA = 25_C
TA = 125_C
GBPC12, 15, 25
GBPC35
5.0 (Max)
500 (Max)
375
660
mA
mA
A2Sec
A2Sec
CT
Total Capacitance, per leg VR = 4.0 V, f = 1.0 MHz GBPC12, 15, 25
GBPC35
180
pF
200
pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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ON Semiconductor GBPC35005
GBPC 12, 15, 25, 35 SERIES
TYPICAL PERFORMANCE CHARACTERISTICS
40
GBPC35
30
GBPC25
20
GBPC15
10 GBPC12
Single phase
half wave
60 Hz
Resistive or
Inductive load
lengths
400
200
GBPC12GBPC25
100
50
GBPC35
0
0
25
50
75 100 125 150 175
Case Temperature (5C)
Figure 1. Forward Current Derating Curve
20
1
2
5
10
20
50
100
Number of Cycles at 60 Hz
Figure 2. NonRepetitive Surge Current
200
100
GBPC25
10
GBPC35
GBPC12GBPC15
1
TA = 25°C
Pulse Width = 300 ms
2% Duty Cycle
0.1
0.6 0.8
1
1.2 1.4 1.6 1.8
2
Forward Voltage, VF (V)
Figure 3. Forward Voltage Characteristics
100
TA = 125°C
10
1
TA = 25°C
0.1
0
20
40
60
80 100 120 140
Percent of Rated Peak Reverse Voltage (per leg) (%)
Figure 4. Reverse Current vs. Reverse Voltage
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