N-Channel MOSFET. NTH4LN040N65S3H Datasheet

NTH4LN040N65S3H MOSFET. Datasheet pdf. Equivalent

NTH4LN040N65S3H Datasheet
Recommendation NTH4LN040N65S3H Datasheet
Part NTH4LN040N65S3H
Description N-Channel MOSFET
Feature NTH4LN040N65S3H; MOSFET - Power, N-Channel, SUPERFET) III, FAST 650 V, 40 mW, 62 A NTH4LN040N65S3H Description SUPERF.
Manufacture ON Semiconductor
Datasheet
Download NTH4LN040N65S3H Datasheet




ON Semiconductor NTH4LN040N65S3H
MOSFET - Power,
N-Channel, SUPERFET) III,
FAST
650 V, 40 mW, 62 A
NTH4LN040N65S3H
Description
SUPERFET III MOSFET is ON Semiconductor’s brandnew high
voltage superjunction (SJ) MOSFET family that is utilizing charge
balance technology for outstanding low onresistance and lower gate
charge performance. This advanced technology is tailored to minimize
conduction loss, provides superior switching performance, and
withstand extreme dv/dt rate.
Consequently, SUPERFET III MOSFET FAST series is very
suitable for the various power systems for miniaturization and higher
efficiency.
Features
700 V @ TJ = 150°C
Typ. RDS(on) = 32 mW
Ultra Low Gate Charge (Typ. Qg = 132 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 1267 pF)
100% Avalanche Tested
These Devices are PbFree and are RoHS Compliant
Applications
Telecom / Server Power Supplies
Industrial Power Supplies
UPS / Solar
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VDSS
650 V
RDS(ON) MAX
40 mW @ 10 V
ID MAX
62 A
D
G
S1: Driver Source
S1
S2 S2: Power Source
POWER MOSFET
D
S2
S1 G
TO2474LD
CASE 340CW
MARKING DIAGRAM
T040N
65S3H
AYWWZZ
© Semiconductor Components Industries, LLC, 2020
March, 2021 Rev. 1
A
YWW
ZZ
T040N65S3H
= Assembly Plant Code
= Data Code (Year & Week)
= Lot
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
1
Publication Order Number:
NTH4LN040N65S3H/D



ON Semiconductor NTH4LN040N65S3H
NTH4LN040N65S3H
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise noted)
Symbol
Parameter
Value
Unit
VDSS
VGSS
Drain to Source Voltage
Gate to Source Voltage
DC
AC (f > 1 Hz)
650
V
±30
V
±30
ID
Drain Current
Continuous (TC = 25°C)
62
Continuous (TC = 100°C)
39
IDM
Drain Current
Pulsed (Note 1)
174
EAS
Single Pulsed Avalanche Energy (Note 2)
675
IAS
Avalanche Current (Note 2)
8.2
EAR
Repetitive Avalanche Energy (Note 1)
3.79
dv/dt
MOSFET dv/dt
120
A
A
mJ
A
mJ
V/ns
Peak Diode Recovery dv/dt (Note 3)
20
PD
Power Dissipation
(TC = 25°C)
Derate Above 25°C
379
W
3.03
W/°C
TJ, TSTG Operating and Storage Temperature Range
55 to +150
°C
TL
Maximum Lead Temperature for Soldering, 1/8from Case for 5 seconds
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive rating: pulse width limited by maximum junction temperature.
2. IAS = 8.2 A, RG = 25 W, starting TJ = 25°C.
3. ISD 31 A, di/dt 200 A/ms, VDD 400 V, starting TJ = 25°C.
THERMAL CHARACTERISTICS
Symbol
Parameter
RqJC
RqJA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
Value
0.33
40
Unit
_C/W
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Marking
Package
NTH4LN040N65S3H
T040N65S3H
TO247 L4
Narrow Lead
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
30 Units
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2



ON Semiconductor NTH4LN040N65S3H
NTH4LN040N65S3H
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
OFF CHARACTERISTICS
BVDSS
Drain to Source Breakdown Voltage
DBVDSS / DTJ Breakdown Voltage Temperature
Coefficient
VGS = 0 V, ID = 1 mA, TJ = 25_C
650
V
VGS = 0 V, ID = 1 mA, TJ = 150_C
700
V
ID = 10 mA, Referenced to 25_C
0.63
V/_C
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ON CHARACTERISTICS
VDS = 650 V, VGS = 0 V
VDS = 520 V, TC = 125_C
VGS = ±30 V, VDS = 0 V
3
mA
2.6
±100
nA
VGS(th)
Gate Threshold Voltage
RDS(on)
Static Drain to Source On Resistance
gFS
Forward Transconductance
DYNAMIC CHARACTERISTICS
VGS = VDS, ID = 6.8 mA
VGS = 10 V, ID = 31 A
VDS = 20 V, ID = 31 A
2.4
4.0
V
32
40
mW
85
S
Ciss
Coss
Input Capacitance
Output Capacitance
6513
pF
VDS = 400 V, VGS = 0 V, f = 250 kHz
97
pF
Coss(eff.)
Effective Output Capacitance
VDS = 0 V to 400 V, VGS = 0 V
1267
pF
Coss(er.)
Energy Related Output Capacitance
VDS = 0 V to 400 V, VGS = 0 V
170
pF
Qg(tot)
Qgs
Qgd
Total Gate Charge at 10 V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
132
nC
VDS = 400 V, ID = 31 A, VGS = 10 V
(Note 4)
36
nC
34
nC
ESR
Equivalent Series Resistance
f = 1 MHz
0.7
W
SWITCHING CHARACTERISTICS
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
SOURCE-DRAIN DIODE CHARACTERISTICS
VDD = 400 V, ID = 31 A,
VGS = 10 V, Rg = 2.2 W
(Note 4)
39
ns
9
ns
95
ns
2.8
ns
IS
Maximum Continuous Source to Drain Diode Forward Current
62
A
ISM
Maximum Pulsed Source to Drain Diode Forward Current
174
A
VSD
Source to Drain Diode Forward Voltage
VGS = 0 V, ISD = 31 A
1.2
V
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, ISD = 31 A,
dIF/dt = 100 A/ms
503
ns
11.4
mC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Essentially independent of operating temperature typical characteristics.
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