NTH4LN019N65S3H

MOSFET - Power, N-Channel, SUPERFET) III, FAST 650 V, 19.3 mW, 75 A NTH4LN019N65S3H Description SUPERFET III MOSFET is onsemi’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET FAST series is very suitable for the various power systems for miniaturization and higher efficiency. Features 700 V @ TJ = 150°C Typ. RDS(on) = 15 mW Ultra Low Gate Charge (Typ. Qg = 282 nC) Low Effective Output Capacitance (Typ. Coss(eff.) = 2495 pF) 100% Avalanche Tested These Devices are Pb−Free and are RoHS Compliant Applications Telecom / Server Power Supplies Industrial Power Supplies UPS / Solar DATA SHEET www.onsemi.com VDSS 650 V RDS(ON) MAX 19.3 mW @ 10 V ID MAX 75 A D G S1: Driver Source S1 S2 S2: Power Source POWER MOSFET D S2 S1 G TO−247−4LD CASE 340CW MARKING DIAGRAM AYWWZZ T019N 65S3H A YWW ZZ T019N65S3H = Assembly Site Code = Data Code (Year & Week) = Assembly Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2020 1 August, 2021 − Rev. 2 Publication Order Number: NTH4LN019N65S3H/D NTH4LN019N65S3H ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unl...