N-Channel MOSFET. NTD360N65S3H Datasheet

NTD360N65S3H MOSFET. Datasheet pdf. Equivalent

NTD360N65S3H Datasheet
Recommendation NTD360N65S3H Datasheet
Part NTD360N65S3H
Description N-Channel MOSFET
Feature NTD360N65S3H; MOSFET - Power, N‐Channel, SUPERFET) III, FAST 650 V, 360 mW, 10 A NTD360N65S3H Description SUPERFET.
Manufacture ON Semiconductor
Datasheet
Download NTD360N65S3H Datasheet




ON Semiconductor NTD360N65S3H
MOSFET - Power,
N‐Channel, SUPERFET) III,
FAST
650 V, 360 mW, 10 A
NTD360N65S3H
Description
SUPERFET III MOSFET is ON Semiconductor’s brand-new high
voltage super-junction (SJ) MOSFET family that is utilizing charge
balance technology for outstanding low on-resistance and lower gate
charge performance. This advanced technology is tailored to minimize
conduction loss, provides superior switching performance, and
withstand extreme dv/dt rate.
Consequently, SUPERFET III FAST MOSFET series helps
minimize various power systems and improve system efficiency.
Features
700 V @ TJ = 150°C
Typ. RDS(on) = 296 mW
Ultra Low Gate Charge (Typ. Qg = 17.5 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 180 pF)
100% Avalanche Tested
These Devices are PbFree and are RoHS Compliant
Applications
Computing / Display Power Supplies
Telecom / Server Power Supplies
Industrial Power Supplies
Lighting / Charger / Adapter
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VDSS
650 V
RDS(ON) MAX
360 mW @ 10 V
ID MAX
10 A
D
G
S
DPAK
CASE 369AS
MARKING DIAGRAM
T360N
65S3H
AYWWZZ
T360N65S3H
A
Y
WW
ZZ
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Lot Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2020
1
March, 2021 Rev. 2
Publication Order Number:
NTD360N65S3H/D



ON Semiconductor NTD360N65S3H
NTD360N65S3H
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise specified)
Symbol
Parameter
Value
Unit
VDSS
VGSS
Drain to Source Voltage
Gate to Source Voltage
DC
AC (f > 1 Hz)
650
V
±30
V
±30
V
ID
Drain Current
Continuous (TC = 25°C)
10
Continuous (TC = 100°C)
6
IDM
Drain Current
Pulsed (Note 1)
28
EAS
Single Pulsed Avalanche Energy (Note 2)
75
IAS
Avalanche Current (Note 2)
1.9
EAR
Repetitive Avalanche Energy (Note 1)
0.83
dv/dt
MOSFET dv/dt
120
A
A
mJ
A
mJ
V/ns
Peak Diode Recovery dv/dt (Note 3)
20
PD
Power Dissipation
(TC = 25°C)
Derate Above 25°C
83
W
0.66
W/°C
TJ, TSTG Operating and Storage Temperature Range
55 to +150
°C
TL
Maximum Lead Temperature for Soldering, 1/8from Case for 5 s
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. IAS = 1.9 A, RG = 25 W, starting TJ = 25°C.
3. ISD 5.0 A, di/dt 200 A/ms, VDD 400 V, starting TJ = 25°C.
THERMAL CHARACTERISTICS
Symbol
Parameter
RqJC
Thermal Resistance, Junction to Case, Max.
RqJA
Thermal Resistance, Junction to Ambient, Max. (Note 4)
4. Device on 1 in2 pad 2 oz copper pad on 1.5 × 1.5 in. board of FR4 material.
Value
1.51
40
Unit
_C/W
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Marking
Package
Reel Size Tape Width
Shipping
NTD360N65S3H
T360N65S3H
DPAK
330 mm
16 mm
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2



ON Semiconductor NTD360N65S3H
NTD360N65S3H
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol
Parameter
Test Conditions
Min
Typ
Max Unit
OFF CHARACTERISTICS
BVDSS
Drain to Source Breakdown Voltage
DBVDSS/DTJ Breakdown Voltage Temperature
Coefficient
VGS = 0 V, ID = 1 mA, TJ = 25_C
VGS = 0 V, ID = 1 mA, TJ = 150_C
ID = 10 mA, Referenced to 25_C
650
V
700
V
0.63
V/_C
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ON CHARACTERISTICS
VDS = 650 V, VGS = 0 V
VDS = 520 V, TC = 125_C
VGS = ±30 V, VDS = 0 V
3
mA
2.6
±100
nA
VGS(th)
Gate Threshold Voltage
RDS(on)
Static Drain to Source On Resistance
gFS
Forward Transconductance
DYNAMIC CHARACTERISTICS
VGS = VDS, ID = 0.7 mA
VGS = 10 V, ID = 5.0 A
VDS = 20 V, ID = 5.0 A
2.4
4.0
V
296
360
mW
11.2
S
Ciss
Input Capacitance
VDS = 400 V, VGS = 0 V, f = 250 kHz
916
pF
Coss
Output Capacitance
15
pF
Coss(eff.)
Effective Output Capacitance
VDS = 0 V to 400 V, VGS = 0 V
180
pF
Coss(er.)
Energy Related Output Capacitance VDS = 0 V to 400 V, VGS = 0 V
24
pF
Qg(tot)
Qgs
Total Gate Charge at 10 V
Gate to Source Gate Charge
VDS = 400 V, ID = 5.0 A, VGS = 10 V
17.5
nC
(Note 5)
4.3
nC
Qgd
Gate to Drain “Miller” Charge
5
nC
ESR
Equivalent Series Resistance
f = 1 MHz
0.9
W
SWITCHING CHARACTERISTICS
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
SOURCE-DRAIN DIODE CHARACTERISTICS
VDD = 400 V, ID = 5.0 A,
VGS = 10 V, Rg = 12 W
(Note 5)
15
ns
6.7
ns
45
ns
7
ns
IS
Maximum Continuous Source to Drain Diode Forward Current
ISM
Maximum Pulsed Source to Drain Diode Forward Current
VSD
Source to Drain Diode Forward
Voltage
VGS = 0 V, ISD = 5.0 A
10
A
28
A
1.2
V
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VDD = 400 V, ISD = 5.0 A,
dIF/dt = 100 A/ms
204
ns
1.8
mC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Essentially independent of operating temperature typical characteristics.
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