NTBLS1D7N08H

MOSFET - Power, Single N-Channel, TOLL 80 V, 1.7 mW, 203 A NTBLS1D7N08H Features Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses Lowers Switching Noise/EMI These Devices are Pb−Free and are RoHS Compliant Typical Applications Power Tools, Battery Operated Vacuums UAV/Drones, Material Handling BMS/Storage, Home Automation MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 80 V Gate−to−Source Voltage VGS ±20 V Continuous Drain Current RqJC (Notes 1, 3) Power Dissipation RqJC (Note 1) TC = 25°C ID Steady TC = 100°C State TC = 25°C PD TC = 100°C 203 A 143 167 W 83 Continuous Drain Current RqJA (Notes 1, 2, 3) Power Dissipation RqJA (Notes 1, 2) TA = 25°C ID Steady TA = 100°C State TA = 25°C PD TA = 100°C 29 A 21 3.5 W 1.7 Pulsed Drain Current TC = 25°C, tp = 100 ms IDM 1173 A Operating Junction and Storage Temperature Range TJ, Tstg − 55 to °C +175 Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 27 A) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) IS 139 A EAS 1093.5 mJ TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit Junction...