N-Channel MOSFET. NTBGS001N06C Datasheet

NTBGS001N06C MOSFET. Datasheet pdf. Equivalent

NTBGS001N06C Datasheet
Recommendation NTBGS001N06C Datasheet
Part NTBGS001N06C
Description N-Channel MOSFET
Feature NTBGS001N06C; MOSFET - Power, Single N-Channel, D2PAK7 60 V, 1.1 mW, 342 A NTBGS001N06C Features • Low RDS(on) t.
Manufacture ON Semiconductor
Datasheet
Download NTBGS001N06C Datasheet




ON Semiconductor NTBGS001N06C
MOSFET - Power, Single
N-Channel, D2PAK7
60 V, 1.1 mW, 342 A
NTBGS001N06C
Features
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
Lowers Switching Noise/EMI
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
Power Tools, Battery Operated Vacuums
UAV/Drones, Material Handling
BMS/Storage, Home Automation
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
DraintoSource Voltage
VDSS
60
V
GatetoSource Voltage
VGS
±20
V
Continuous Drain
ID
Current RqJC (Note 2) Steady
Power Dissipation
State
TC = 25°C
PD
RqJC (Note 2)
342
A
245 W
Continuous Drain
Current RqJA
(Notes 1, 2)
Power Dissipation
RqJA (Notes 1, 2)
ID
Steady
State
TA = 25°C
PD
42
A
3.7
W
Pulsed Drain Current TA = 25°C, tp = 100 ms IDM
1724 A
Operating Junction and Storage Temperature
Range
TJ, Tstg 55 to °C
+175
Source Current (Body Diode)
Single Pulse DraintoSource Avalanche
Energy (IL = 44.1 Apk, L = 1 mH)
Lead Temperature for Soldering Purposes
(1/8from case for 10 s)
IS
204
A
EAS
973 mJ
TL
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surfacemounted on FR4 board using a 1 in2, 1 oz. Cu pad.
2. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
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V(BR)DSS
60 V
RDS(ON) MAX
1.1 mW @ 12 V
1.2 mW @ 10 V
ID MAX
342 A
D (Pin 4, tab)
G (Pin 1)
1. Gate
2. Source
3. Source
4. Drain
5. Source
6. Source
7. Source
S (Pins 2,3,5,6,7)
NCHANNEL MOSFET
MARKING
4
DIAGRAM
1
23 567
D2PAK7
CASE 221BP
BGS001
N06C
AYWWG
BGS001N06C = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
ORDERING INFORMATION
Device
NTBGS001N06C
Package
D2PAK7
(PbFree)
Shipping
800 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2019
1
November, 2020 Rev. 1
Publication Order Number:
NTBGS001N06C/D



ON Semiconductor NTBGS001N06C
NTBGS001N06C
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
JunctiontoCase Steady State (Note 2)
JunctiontoAmbient Steady State (Note 1)
Symbol
RqJC
RqJA
Value
0.61
40
Unit
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min Typ Max Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
DraintoSource Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
GatetoSource Leakage Current
ON CHARACTERISTICS (Note 3)
V(BR)DSS
V(BR)DSS/
TJ
IDSS
IGSS
VGS = 0 V, ID = 250 mA
60
ID = 562 mA, ref to 25°C
VGS = 0 V,
VDS = 60 V
TJ = 25°C
TJ = 125°C
VDS = 0 V, VGS = 20 V
V
10
mV/°C
10
mA
100
mA
100
nA
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
DraintoSource On Resistance
VGS(TH)
VGS(TH)/TJ
RDS(on)
GateResistance
RG
CHARGES, CAPACITANCES & GATE RESISTANCE
VGS = VDS, ID = 562 mA
ID = 562 mA, ref to 25°C
VGS = 12 V, ID = 112 A
VGS = 10 V, ID = 56 A
TA = 25°C
2.0
3.0
4.0
V
9.5
mV/°C
0.89 1.1
mW
0.93 1.2
0.5
W
Input Capacitance
CISS
11110
Output Capacitance
COSS
VGS = 0 V, VDS = 30 V, f = 500 kHz
6250
pF
Reverse Transfer Capacitance
CRSS
54
Total Gate Charge
QG(TOT)
139
Threshold Gate Charge
GatetoSource Charge
QG(TH)
27.3
QGS
VGS = 10 V, VDS = 30 V; ID = 112 A
45.9
nC
GatetoDrain Charge
QGD
19.5
Output Charge
QOSS
VGS = 0 V, VDS = 50 V
292
SWITCHING CHARACTERISTICS (Note 4)
TurnOn Delay Time
td(ON)
Rise Time
tr
TurnOff Delay Time
td(OFF)
Fall Time
tf
DRAINSOURCE DIODE CHARACTERISTICS
VGS = 10 V, VDS = 30 V,
ID = 112 A, RG = 6 W
41.1
23.3
ns
92
31.7
Forward Diode Voltage
VSD
VGS = 0 V,
TJ = 25°C
IS = 112 A
TJ = 125°C
0.84 1.2
V
0.72
Reverse Recovery Time
Reverse Recovery Charge
tRR
QRR
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 56 A
112
ns
647
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: pulse width 300 ms, duty cycle 2%.
4. Switching characteristics are independent of operating junction temperatures.
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ON Semiconductor NTBGS001N06C
NTBGS001N06C
TYPICAL CHARACTERISTICS
300
270
240
210
180
150
120
90
60
30
0
0
5.2 V
10 V to 5.4 V 5.0 V
4.8 V
4.6 V
VGS = 4.4 V
0.5
1.0
1.5
2.0
2.5
3.0
VDS, DRAINTOSOURCE VOLTAGE (V)
Figure 1. OnRegion Characteristics
400
VDS = 10 V
350
300
250
200
150
TJ = 25°C
100
50
0
TJ = 125°C
TJ = 55°C
0
1
2
3
4
5
6
VGS, GATETOSOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
3.0
1.2
TJ = 25°C
2.5
ID = 112 A
TJ = 25°C
1.1
2.0
1.0
VGS = 10 V
1.5
0.9
VGS = 12 V
1.0
0.8
0.5
0
5
6
7
8
9
10
11
12
VGS, GATETOSOURCE VOLTAGE (V)
Figure 3. OnResistance vs. GatetoSource
Voltage
2.0
ID = 112 A
1.8 VGS = 10 V
1.6
1.4
1.2
1.0
0.8
0.6
50 25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. OnResistance Variation with
Temperature
0.7
0.6
50
100
150
200
250
300
ID, DRAIN CURRENT (A)
Figure 4. OnResistance vs. Drain Current and
Gate Voltage
100K
TJ = 150°C
10K TJ = 125°C
1K TJ = 85°C
100
TJ = 25°C
10
1
5
15
25
35
45
55
VDS, DRAINTOSOURCE VOLTAGE (V)
Figure 6. DraintoSource Leakage Current
vs. Voltage
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