N-Channel MOSFET
MOSFET - Power, Single N-Channel, D2PAK7
60 V, 1.1 mW, 342 A
NTBGS001N06C
Features
• Low RDS(on) to Minimize Conductio...
Description
MOSFET - Power, Single N-Channel, D2PAK7
60 V, 1.1 mW, 342 A
NTBGS001N06C
Features
Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses Lowers Switching Noise/EMI These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
Power Tools, Battery Operated Vacuums UAV/Drones, Material Handling BMS/Storage, Home Automation
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
60
V
Gate−to−Source Voltage
VGS
±20
V
Continuous Drain
ID
Current RqJC (Note 2) Steady
Power Dissipation
State
TC = 25°C
PD
RqJC (Note 2)
342
A
245 W
Continuous Drain Current RqJA (Notes 1, 2)
Power Dissipation RqJA (Notes 1, 2)
ID
Steady State
TA = 25°C
PD
42
A
3.7
W
Pulsed Drain Current TA = 25°C, tp = 100 ms IDM
1724 A
Operating Junction and Storage Temperature Range
TJ, Tstg − 55 to °C +175
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche Energy (IL = 44.1 Apk, L = 1 mH)
Lead Temperature for Soldering Purposes (1/8″ from case for 10 s)
IS
204
A
EAS
973 mJ
TL
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface−mounted on FR4 board using a 1 in2, 1 oz. Cu pad. 2. The entire application environment impacts the thermal resistance va...
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