NTB011N15MC

MOSFET - N-Channel Shielded Gate PowerTrench[ 150 V, 10.9 mW, 75.4 A NTB011N15MC Features Shielded Gate MOSFET Technology Max RDS(on) = 10.9 mW at VGS = 10 V, ID = 41 A 50% Lower Qrr than other MOSFET Suppliers Lowers Switching Noise/EMI 100% UIL Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications Synchronous Rectification for ATX / Server / Telecom PSU Motor Drives and Uninterruptible Power Supplies Micro Solar Inverter MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 150 V Gate−to−Source Voltage VGS ±20 V Continuous Drain ID 75.4 A Current RqJC (Note 2) Steady Power Dissipation State TC = 25°C PD 136.4 W RqJC (Note 2) Continuous Drain Current RqJA (Notes 1, 2) Power Dissipation RqJA (Notes 1, 2) ID Steady State TA = 25°C PD 12.5 A 3.75 W Pulsed Drain Current TC = 25°C, tp = 100 ms IDM 323 A Operating Junction and Storage Temperature Range TJ, Tstg − 55 to °C +175 Single Pulse Drain−to−Source Avalanche Energy (IL = 14 Apk, L = 3 mH) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) EAS 294 mJ TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface−mounted on FR4 board using a 1 in2, 2 oz. Cu pad. 2. The entire applicatio...