FDPF041N06BL1-F154

MOSFET – N-Channel, POWERTRENCH) 60 V, 77 A, 4.1 mW FDPF041N06BL1-F154 Description This N−Channel MOSFET is produced using ON Semiconductor’s advanced POWERTRENCH process that has been tailored to minimize the on−state resistance while maintaining superior switching performance. Features RDS(on) = 3.5 mW (Typ.)@ VGS = 10 V, ID = 77 A Low FOM RDS(on)*QG Low Reverse Recovery Charge, Qrr Soft Reverse Recovery Body Diode Enables Highly Efficiency in Synchronous Rectification Fast Switching Speed 100% UIL Tested These Devices are Pb−Free and are RoHS Compliant Applications Synchronous Rectification for ATX / Server / Telecom PSU Battery Protection Circuit Motor Drives and Uninterruptible Power Supplies Renewable System www.onsemi.com VDSS 60 V RDS(ON) MAX 4.1 mW @ 10 V ID MAX 77 A D G S MOSFET GDS TO−220F Ultra Narrow Lead CASE 221BN MARKING DIAGRAM $Y&Z&3&K FDPF 041N06BL1 © Semiconductor Components Industries, LLC, 2020 December, 2020 − Rev. 0 $Y &Z &3 &K FDPF041N06BL1 = ON Semiconductor Logo = Assembly Plant Code = Data Code (Year & Week) = Lot = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. 1 Publication Order Number: FDPF041N06BL1−F154/D FDPF041N06BL1−F154 ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise noted) Symbol Parameter Value Unit VDSS Drain to Source Voltage 60 VGSS Gate to Source Voltage ±20 ID Drain Current − Continuous (TC = 25°C, Sili...