N-Channel MOSFET. FDPF035N06B-F154 Datasheet

FDPF035N06B-F154 MOSFET. Datasheet pdf. Equivalent

FDPF035N06B-F154 Datasheet
Recommendation FDPF035N06B-F154 Datasheet
Part FDPF035N06B-F154
Description N-Channel MOSFET
Feature FDPF035N06B-F154; MOSFET – N-Channel, POWERTRENCH) 60 V, 88 A, 3.5 mW FDPF035N06B-F154 Description This N−Channel MOSF.
Manufacture ON Semiconductor
Datasheet
Download FDPF035N06B-F154 Datasheet




ON Semiconductor FDPF035N06B-F154
MOSFET – N-Channel,
POWERTRENCH)
60 V, 88 A, 3.5 mW
FDPF035N06B-F154
Description
This NChannel MOSFET is produced using ON Semiconductor’s
advanced POWERTRENCH process that has been tailored to
minimize the onstate resistance while maintaining superior switching
performance.
Features
RDS(on) = 2.91 mW (Typ.)@ VGS = 10 V, ID = 88 A
Low FOM RDS(on)*QG
Low Reverse Recovery Charge, Qrr
Soft Reverse Recovery Body Diode
Enables Highly Efficiency in Synchronous Rectification
Fast Switching Speed
100% UIL Tested
These Devices are PbFree and are RoHS Compliant
Applications
Synchronous Rectification for ATX / Server / Telecom PSU
Battery Protection Circuit
Motor Drives and Uninterruptible Power Supplies
Renewable System
www.onsemi.com
VDSS
60 V
RDS(ON) MAX
3.5 mW @ 10 V
ID MAX
88 A
D
G
S
MOSFET
GDS
TO220F Ultra Narrow Lead
CASE 221BN
MARKING DIAGRAM
$Y&Z&3&K
FDPF
035N06B
© Semiconductor Components Industries, LLC, 2020
December, 2020 Rev. 0
$Y
&Z
&3
&K
FDPF035N06B
= ON Semiconductor Logo
= Assembly Plant Code
= Data Code (Year & Week)
= Lot
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
1
Publication Order Number:
FDPF035N06BF154/D



ON Semiconductor FDPF035N06B-F154
FDPF035N06BF154
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise noted)
Symbol
Parameter
Value
Unit
VDSS
Drain to Source Voltage
60
VGSS
Gate to Source Voltage
±20
ID
Drain Current
Continuous (TC = 25°C, Silicon Limited)
88
Continuous (TC = 100°C, Silicon Limited)
62
IDM
Drain Current
Pulsed (Note 1)
352
EAS
Single Pulsed Avalanche Energy (Note 2)
600
dv/dt
Peak Diode Recovery dv/dt (Note 3)
6.0
V
V
A
A
mJ
V/ns
PD
Power Dissipation
(TC = 25°C)
Derate Above 25°C
46.3
W
0.31
W/°C
TJ, TSTG Operating and Storage Temperature Range
55 to +175
°C
TL
Maximum Lead Temperature for Soldering, 1/8from Case for 5 Seconds
300
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive rating: pulsewidth limited by maximum junction temperature.
2. L = 3 mH, IAS = 20 A, starting TJ = 25°C.
3. ISD 100 A, di/dt 200 A/ms, VDD BVDSS, starting TJ = 25°C.
THERMAL CHARACTERISTICS
Symbol
Parameter
RqJC
RqJA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
Value
3.24
62.5
Unit
_C/W
_C/W
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Marking
FDPF035N06BF154
FDPF035N06B
Package
TO220F
(PbFree)
Shipping
50 Units / Tube
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2



ON Semiconductor FDPF035N06B-F154
FDPF035N06BF154
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
OFF CHARACTERISTICS
BVDSS
DBVDSS / DTJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
ID = 250 mA, VGS = 0 V
ID = 250 mA, Referenced to 25_C
60
V
0.03
V/_C
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ON CHARACTERISTICS
VDS = 48 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
1
mA
±100
nA
VGS(th)
Gate Threshold Voltage
RDS(on)
Static Drain to Source On Resistance
gFS
Forward Transconductance
DYNAMIC CHARACTERISTICS
VGS = VDS, ID = 250 mA
VGS = 10 V, ID = 88 A
VDS = 20 V, ID = 88 A
2
4
V
2.91
3.5
mW
176
S
Ciss
Coss
Crss
Coss(er)
Qg(tot)
Qgs
Qgd
Vplateau
Qsync
Qoss
ESR
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Energy Related Output Capacitance
Total Gate Charge at 10 V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Gate Plateau Voltage
Total Gate Charge Sync.
Output Charge
Equivalent Series Resistance (GS)
VDS = 30 V, VGS = 0 V, f = 1 MHz
VDS = 30 V, VGS = 0 V
VDS = 30 V, ID = 100 A, VGS = 10 V
(Note 4)
VDS = 0 V, ID = 50 A
VDS = 30 V, VGS = 0 V
f = 1 MHz
6035 8030
pF
1685 2240
pF
55
pF
2619
76
99
nC
29
nC
12
nC
5.2
V
67.3
nC
92.4
nC
2.0
W
SWITCHING CHARACTERISTICS
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
DRAINSOURCE DIODE CHARACTERISTICS
VDD = 30 V, ID = 100 A, VGS = 10 V,
Rg = 4.7 W
(Note 4)
32
74
ns
33
76
ns
56
122
ns
23
56
ns
IS
Maximum Continuous Source to Drain Diode Forward Current
88
A
ISM
Maximum Pulsed Source to Drain Diode Forward Current
352
A
VSD
Source to Drain Diode Forward Voltage VGS = 0 V, ISD = 88 A
1.25
V
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, ISD = 100 A,
dIF/dt = 100 A/ms
71
ns
78
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Essentially independent of operating temperature typical characteristics.
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