FDMC6675BZ

MOSFET – P-Channel, POWERTRENCH) -30 V, -20 A, 14.4 mW FDMC6675BZ Description The FDMC6675BZ has been designed to minimize losses in load switch applications. Advancements in both silicon and package technologies have been combined to offer the lowest RDS(on) and ESD protection. Features Max RDS(on) = 14.4 mW at VGS = −10 V, ID = −9.5 A Max RDS(on) = 27.0 mW at VGS = −4.5 V, ID = −6.9 A HBM ESD Protection Level of 8 kV Typical (Note 3) Extended VGSS Range (−25 V) for Battery Applications High Performance Trench Technology for Extremely Low RDS(on) High Power and Current Handling Capability These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications Load Switch in Notebook and Server Notebook Battery Pack Power Management DATA SHEET www.onsemi.com VDS −30 V RDS(on) MAX 14.4 mW @ −10 V ID MAX −20 A S1 8D S2 7D S3 G4 6D 5D P−Channel Pin 1 SS S G DDDD Top Bottom WDFN8 3.3x3.3, 0.65P CASE 511DR MARKING DIAGRAM $Y&Z&2&K FDMC 6675BZ $Y &Z &2 &K FDMC6675BZ = onsemi Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2018 1 September, 2023 − Rev. 5 Publication Order Number: FDMC6675BZ/D FDMC6675BZ MOSFET MAXIMUM RATINGS (TA = 25°C, Unless otherwise specified) Symbol Parameter Ratings Unit VDS Drain to Source Voltage −30 V VGS Gate ...