P-Channel MOSFET
MOSFET – P-Channel, POWERTRENCH)
-30 V, -20 A, 14.4 mW
FDMC6675BZ
Description The FDMC6675BZ has been designed to minimi...
Description
MOSFET – P-Channel, POWERTRENCH)
-30 V, -20 A, 14.4 mW
FDMC6675BZ
Description The FDMC6675BZ has been designed to minimize losses in load
switch applications. Advancements in both silicon and package technologies have been combined to offer the lowest RDS(on) and ESD protection.
Features
Max RDS(on) = 14.4 mW at VGS = −10 V, ID = −9.5 A Max RDS(on) = 27.0 mW at VGS = −4.5 V, ID = −6.9 A HBM ESD Protection Level of 8 kV Typical (Note 3) Extended VGSS Range (−25 V) for Battery Applications High Performance Trench Technology for Extremely Low RDS(on) High Power and Current Handling Capability These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
Load Switch in Notebook and Server Notebook Battery Pack Power Management
DATA SHEET www.onsemi.com
VDS −30 V
RDS(on) MAX 14.4 mW @ −10 V
ID MAX −20 A
S1
8D
S2
7D
S3 G4
6D 5D
P−Channel
Pin 1 SS S G
DDDD
Top
Bottom
WDFN8 3.3x3.3, 0.65P CASE 511DR
MARKING DIAGRAM
$Y&Z&2&K FDMC 6675BZ
$Y &Z &2 &K FDMC6675BZ
= onsemi Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2018
1
September, 2023 − Rev. 5
Publication Order Number: FDMC6675BZ/D
FDMC6675BZ
MOSFET MAXIMUM RATINGS (TA = 25°C, Unless otherwise specified)
Symbol
Parameter
Ratings
Unit
VDS
Drain to Source Voltage
−30
V
VGS
Gate ...
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