N-Channel MOSFET. FDMC3612 Datasheet

FDMC3612 MOSFET. Datasheet pdf. Equivalent

FDMC3612 Datasheet
Recommendation FDMC3612 Datasheet
Part FDMC3612
Description N-Channel MOSFET
Feature FDMC3612; MOSFET – N-Channel, POWERTRENCH) 100 V, 12 A, 110 mW FDMC3612, FDMC3612-L701 General Description Th.
Manufacture ON Semiconductor
Datasheet
Download FDMC3612 Datasheet




ON Semiconductor FDMC3612
MOSFET – N-Channel,
POWERTRENCH)
100 V, 12 A, 110 mW
FDMC3612, FDMC3612-L701
General Description
This NChannel MOSFET is produced using ON Semiconductor’s
advanced POWERTRENCH process that has been especially tailored
to minimize the onstate resistance and yet maintain superior
switching performance.
Features
Max rDS(on) = 110 mW at VGS = 10 V, ID = 3.3 A
Max rDS(on) = 122 mW at VGS = 6 V, ID = 3.0 A
Low Profile 1 mm Max in Power 33
100% UIL Tested
These Devices are PbFree and are RoHS Compliant
Applications
DC DC Conversion
PSE Switch
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8765
SSSG
1234
DDDD
Top
Bottom
WDFN8 3.3x3.3, 0.65P
CASE 511DR
FDMC3612
SS SG
DDDD
Top
Bottom
WDFN8 3.3x3.3, 0.65P
CASE 511DQ
FDMC3612L701
MARKING DIAGRAM
ON AXYKK
FDMC
3612
FDMC
3612
ALYW
FDMC3612
FDMC3612L701
FDMC3612 = Specific Device Code
A
= Assembly Location
XY
= 2Digit Date Code
KK
= 2Digit Lot Run Traceability Code
L
= Wafer Lot Number
YW
= Assembly Start Week
PIN ASSIGNMENT
D5
4 G G1
8D
D6
3 S S2
7D
D7
2 S S3
6D
D8
1 S S4
5D
FDMC3612
FDMC3612L701
ORDERING INFORMATION
See detailed ordering and shipping information on page 6 of
this data sheet.
© Semiconductor Components Industries, LLC, 2017
1
February, 2020 Rev. 4
Publication Order Number:
FDMC3612/D



ON Semiconductor FDMC3612
FDMC3612, FDMC3612L701
MOSFET MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Symbol
Parameter
Rating
Unit
VDS Drain to Source Voltage
VGS Gate to Source Voltage
Drain Current
ID
Continuous (Package limited)
Continuous (Silicon limited)
Continuous (Note 1a)
Pulsed
TC = 25°C
TC = 25°C
TA = 25°C
100
V
±20
V
16
A
12
3.3
15
EAS Single Pulse Avalanche Energy (Note 2)
32
mJ
PD
Power Dissipation
TC = 25°C
35
W
Power Dissipation (Note 1a)
TA = 25°C
2.3
TJ, TSTG Operating and Storage Junction Temperature Range
55 to + 150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Symbol
Parameter
Rating
Unit
RqJC Thermal Resistance, Junction to Case
3.5
°C/W
RqJA Thermal Resistance, Junction to Ambient (Note 1a)
53
1. RqJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR4 material. RqJC is guaranteed
by design while RqCA is determined by the user’s board design.
a. 53°C/W when mounted on a 1 in2 pad
of 2 oz copper
b. 125°C/W when mounted on a minimum
pad of 2 oz copper
2. Starting TJ = 25°C; Nch: L = 1 mH, IAS = 8 A, VDD = 90 V, VGS = 10 V.
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ON Semiconductor FDMC3612
FDMC3612, FDMC3612L701
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol
Parameter
Test Conditions
Min
Typ
Max Unit
OFF CHARACTERISTICS
BVDSS
DBVDSS /
DTJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature Co-
efficient
ID = 250 mA, VGS = 0 V
ID = 250 mA, referenced to 25°C
100
109
V
mV/°C
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
ON CHARACTERISTICS
VDS = 80 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
1
mA
±100
nA
VGS(th)
DVGS(th) /
DTJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
VGS = VDS, ID = 250 mA
ID = 250 mA, referenced to 25°C
2.0
2.5
4.0
V
7
mV/°C
rDS(on) Static Drain to Source On Resistance
gFS
Forward Transconductance
DYNAMIC CHARACTERISTICS
VGS = 10 V, ID = 3.3 A
VGS = 6 V, ID = 3.0 A
VGS = 10 V, ID = 3.3 A, TJ = 125°C
VDS = 10 V, ID = 3.3 A
92
110
mW
98
122
177
212
13
S
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
SWITCHING CHARACTERISTICS
VDS = 50 V, VGS = 0 V, f = 1 MHz
662
880
pF
40
55
pF
23
35
pF
1.3
W
td(on)
tr
td(off)
tf
TurnOn Delay Time
Rise Time
TurnOff Delay Time
Fall Time
VDD = 50 V, ID = 3.3 A, VGS = 10 V,
RGEN = 6 W
7.4
15
ns
2.8
10
ns
19
34
ns
2
10
ns
Qg(TOT)
Qg(TOT)
Qgs
Qgd
Total Gate Charge
Total Gate Charge
Total Gate Charge
Gate to Drain “Miller” Charge
VGS = 0 V to 10 V, VDD = 50 V, ID = 3.3 A
14.4
21
nC
VGS = 0 V to 5 V, VDD = 50 V, ID = 3.3 A
7.9
12
nC
VDD = 50 V, ID = 3.3 A
2.3
nC
3.7
nC
DRAINSOURCE DIODE CHARACTERISTICS
VSD
Source to Drain Diode Forward
Voltage
VGS = 0 V, IS = 3.3 A (Note 3)
VGS = 0 V, IS = 2 A (Note 3)
0.88
1.2
V
0.77
1.2
trr
Reverse Recovery Time
IF = 3.3 A, di/dt = 100 A/ms
34
55
ns
Qrr
Reverse Recovery Charge
37
60
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.
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