FDMC3612

MOSFET – N-Channel, POWERTRENCH) 100 V, 12 A, 110 mW FDMC3612, FDMC3612-L701 General Description This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain superior switching performance. Features Max rDS(on) = 110 mW at VGS = 10 V, ID = 3.3 A Max rDS(on) = 122 mW at VGS = 6 V, ID = 3.0 A Low Profile − 1 mm Max in Power 33 100% UIL Tested These Devices are Pb−Free and are RoHS Compliant Applications DC − DC Conversion PSE Switch DATA SHEET www.onsemi.com 8765 SSSG 1234 DDDD Top Bottom WDFN8 3.3x3.3, 0.65P CASE 511DR FDMC3612 SS SG DDDD Top Bottom WDFN8 3.3x3.3, 0.65P CASE 511DQ FDMC3612−L701 MARKING DIAGRAM ON AXYKK FDMC 3612 FDMC 3612 ALYW FDMC3612 FDMC3612−L701 FDMC3612 = Specific Device Code A = Assembly Location XY = 2−Digit Date Code KK = 2−Digit Lot Run Traceability Code L = Wafer Lot Number YW = Assembly Start Week PIN ASSIGNMENT D5 D6 D7 D8 4G 3S 2S 1S ORDERING INFORMATION See detailed ordering and shipping information on page 6 of this data sheet. © Semiconductor Components Industries, LLC, 2017 1 November, 2021 − Rev. 6 Publication Order Number: FDMC3612/D FDMC3612, FDMC3612−L701 MOSFET MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol Parameter Rating Unit VDS Drain to Source Voltage VGS Gate to Source Voltage Drain Current ID Continuous Continuous (Note 1a) Pulsed TC = 25°C TA = 25°C 100 V...