N-Channel MOSFET
MOSFET – N-Channel, POWERTRENCH)
100 V, 12 A, 110 mW
FDMC3612, FDMC3612-L701
General Description This N−Channel MOSFET i...
Description
MOSFET – N-Channel, POWERTRENCH)
100 V, 12 A, 110 mW
FDMC3612, FDMC3612-L701
General Description This N−Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain superior switching performance.
Features
Max rDS(on) = 110 mW at VGS = 10 V, ID = 3.3 A Max rDS(on) = 122 mW at VGS = 6 V, ID = 3.0 A Low Profile − 1 mm Max in Power 33 100% UIL Tested These Devices are Pb−Free and are RoHS Compliant
Applications
DC − DC Conversion PSE Switch
DATA SHEET www.onsemi.com
8765
SSSG
1234
DDDD
Top
Bottom
WDFN8 3.3x3.3, 0.65P CASE 511DR
FDMC3612
SS SG
DDDD
Top
Bottom
WDFN8 3.3x3.3, 0.65P CASE 511DQ
FDMC3612−L701
MARKING DIAGRAM
ON AXYKK FDMC 3612
FDMC 3612 ALYW
FDMC3612
FDMC3612−L701
FDMC3612 = Specific Device Code
A
= Assembly Location
XY
= 2−Digit Date Code
KK
= 2−Digit Lot Run Traceability Code
L
= Wafer Lot Number
YW
= Assembly Start Week
PIN ASSIGNMENT
D5 D6 D7 D8
4G 3S 2S 1S
ORDERING INFORMATION
See detailed ordering and shipping information on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2017
1
November, 2021 − Rev. 6
Publication Order Number: FDMC3612/D
FDMC3612, FDMC3612−L701
MOSFET MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Symbol
Parameter
Rating
Unit
VDS Drain to Source Voltage VGS Gate to Source Voltage
Drain Current ID
Continuous Continuous (Note 1a) Pulsed
TC = 25°C TA = 25°C
100
V...
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