Operational Amplifiers. LM2904M Datasheet

LM2904M Amplifiers. Datasheet pdf. Equivalent

LM2904M Datasheet
Recommendation LM2904M Datasheet
Part LM2904M
Description Low Power Dual Operational Amplifiers
Feature LM2904M; LM158/LM258/LM358/LM2904 Low Power Dual Operational Amplifiers October 2005 LM158/LM258/LM358/LM29.
Manufacture National Semiconductor
Datasheet
Download LM2904M Datasheet




National Semiconductor LM2904M
October 2005
LM158/LM258/LM358/LM2904
Low Power Dual Operational Amplifiers
General Description
The LM158 series consists of two independent, high gain,
internally frequency compensated operational amplifiers
which were designed specifically to operate from a single
power supply over a wide range of voltages. Operation from
split power supplies is also possible and the low power
supply current drain is independent of the magnitude of the
power supply voltage.
Application areas include transducer amplifiers, dc gain
blocks and all the conventional op amp circuits which now
can be more easily implemented in single power supply
systems. For example, the LM158 series can be directly
operated off of the standard +5V power supply voltage which
is used in digital systems and will easily provide the required
interface electronics without requiring the additional ±15V
power supplies.
The LM358 and LM2904 are available in a chip sized pack-
age (8-Bump micro SMD) using National’s micro SMD pack-
age technology.
Unique Characteristics
n In the linear mode the input common-mode voltage
range includes ground and the output voltage can also
swing to ground, even though operated from only a
single power supply voltage.
n The unity gain cross frequency is temperature
compensated.
n The input bias current is also temperature compensated.
Advantages
n Two internally compensated op amps
n Eliminates need for dual supplies
n Allows direct sensing near GND and VOUT also goes to
GND
n Compatible with all forms of logic
n Power drain suitable for battery operation
Features
n Available in 8-Bump micro SMD chip sized package,
(See AN-1112)
n Internally frequency compensated for unity gain
n Large dc voltage gain: 100 dB
n Wide bandwidth (unity gain): 1 MHz
(temperature compensated)
n Wide power supply range:
— Single supply: 3V to 32V
— or dual supplies: ±1.5V to ±16V
n Very low supply current drain (500 µA) — essentially
independent of supply voltage
n Low input offset voltage: 2 mV
n Input common-mode voltage range includes ground
n Differential input voltage range equal to the power
supply voltage
n Large output voltage swing
Voltage Controlled Oscillator (VCO)
© 2005 National Semiconductor Corporation DS007787
00778723
www.national.com



National Semiconductor LM2904M
Absolute Maximum Ratings (Note 9)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
LM158/LM258/LM358
LM2904
LM158A/LM258A/LM358A
Supply Voltage, V+
32V
26V
Differential Input Voltage
32V
26V
Input Voltage
−0.3V to +32V
−0.3V to +26V
Power Dissipation (Note 1)
Molded DIP
830 mW
830 mW
Metal Can
550 mW
Small Outline Package (M)
530 mW
530 mW
micro SMD
435mW
Output Short-Circuit to GND
(One Amplifier) (Note 2)
V+ 15V and TA = 25˚C
Input Current (VIN < −0.3V) (Note 3)
Operating Temperature Range
Continuous
50 mA
Continuous
50 mA
LM358
0˚C to +70˚C
−40˚C to +85˚C
LM258
−25˚C to +85˚C
LM158
−55˚C to +125˚C
Storage Temperature Range
−65˚C to +150˚C
−65˚C to +150˚C
Lead Temperature, DIP
(Soldering, 10 seconds)
260˚C
260˚C
Lead Temperature, Metal Can
(Soldering, 10 seconds)
300˚C
300˚C
Soldering Information
Dual-In-Line Package
Soldering (10 seconds)
260˚C
260˚C
Small Outline Package
Vapor Phase (60 seconds)
215˚C
215˚C
Infrared (15 seconds)
220˚C
220˚C
See AN-450 “Surface Mounting Methods and Their Effect on Product Reliability” for other methods of soldering
surface mount devices.
ESD Tolerance (Note 10)
250V
250V
Electrical Characteristics
V+ = +5.0V, unless otherwise stated
Parameter
Conditions
Input Offset Voltage
Input Bias Current
Input Offset Current
Input Common-Mode
Voltage Range
Supply Current
(Note 5), TA = 25˚C
IIN(+) or IIN(−), TA = 25˚C,
VCM = 0V, (Note 6)
IIN(+) − IIN(−), VCM = 0V, TA = 25˚C
V+ = 30V, (Note 7)
(LM2904, V+ = 26V), TA = 25˚C
Over Full Temperature Range
RL = on All Op Amps
V+ = 30V (LM2904 V+ = 26V)
V+ = 5V
LM158A
Min Typ Max
12
20 50
LM358A
Min Typ Max
23
45 100
LM158/LM258
Min Typ Max
25
45 150
Units
mV
nA
2 10
5 30
3 30 nA
0
V+−1.5 0
V+−1.5 0
V+−1.5 V
12
0.5 1.2
12
0.5 1.2
12
mA
0.5 1.2 mA
www.national.com
2



National Semiconductor LM2904M
Electrical Characteristics
V+ = +5.0V, unless otherwise stated
Parameter
Conditions
Input Offset Voltage
Input Bias Current
Input Offset Current
Input Common-Mode
Voltage Range
Supply Current
(Note 5) , TA = 25˚C
IIN(+) or IIN(−), TA = 25˚C,
VCM = 0V, (Note 6)
IIN(+) − IIN(−), VCM = 0V, TA = 25˚C
V+ = 30V, (Note 7)
(LM2904, V+ = 26V), TA = 25˚C
Over Full Temperature Range
RL = on All Op Amps
V+ = 30V (LM2904 V+ = 26V)
V+ = 5V
LM358
Min Typ Max
2
7
45 250
LM2904
Min Typ Max
2
7
45 250
Units
mV
nA
5
50
5
50
nA
0
V+−1.5 0
V+−1.5 V
1
2
0.5 1.2
1
2
mA
0.5 1.2
mA
Electrical Characteristics
V+ = +5.0V, (Note 4), unless otherwise stated
Parameter
Conditions
Large Signal Voltage
Gain
V+ = 15V, TA = 25˚C,
RL 2 k, (For VO = 1V
to 11V)
Common-Mode
Rejection Ratio
Power Supply
TA = 25˚C,
VCM = 0V to V+−1.5V
V+ = 5V to 30V
Rejection Ratio
(LM2904, V+ = 5V
Amplifier-to-Amplifier
Coupling
to 26V), TA = 25˚C
f = 1 kHz to 20 kHz, TA = 25˚C
(Input Referred), (Note 8)
Output Current
Source VIN+ = 1V,
VIN− = 0V,
V+ = 15V,
VO = 2V, TA = 25˚C
Sink VIN− = 1V, VIN+ = 0V
V+ = 15V, TA = 25˚C,
VO = 2V
VIN− = 1V,
VIN+ = 0V
TA = 25˚C, VO = 200 mV,
V+ = 15V
Short Circuit to Ground
TA = 25˚C, (Note 2),
V+ = 15V
Input Offset Voltage
(Note 5)
Input Offset Voltage
Drift
RS = 0
Input Offset Current
Input Offset Current
Drift
IIN(+) − IIN(−)
RS = 0
Input Bias Current
Input Common-Mode
IIN(+) or IIN(−)
V+ = 30 V, (Note 7)
Voltage Range
(LM2904, V+ = 26V)
LM158A
LM358A
LM158/LM258 Units
Min Typ Max Min Typ Max Min Typ Max
50 100
25 100
50 100
V/mV
70 85
65 85
70 85
dB
65 100
65 100
65 100
dB
−120
−120
−120
dB
20 40
20 40
20 40
mA
10 20
10 20
10 20
mA
12 50
12 50
12 50
µA
40 60
40 60
40 60 mA
4
5
7
mV
7 15
7 20
7
µV/˚C
30
75
100 nA
10 200
10 300
10
pA/˚C
40 100
40 200
40 300 nA
0
V+−2 0
V+−2 0
V+−2 V
3
www.national.com







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)