40N60FL

NGTB40N60FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. Features Low Saturation Voltage using Trench with Field Stop Technology Low Switching Loss Reduces System Power Dissipation Soft Fast Reverse Recovery Diode Optimized for High Speed Switching 5 ms Short−Circuit Capability These are Pb−Free Devices Typical Applications Solar Inverters Uninterruptable Power Supply (UPS) ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collector−emitter voltage Collector current @ TC = 25°C @ TC = 100°C VCES 600 V IC A 80 40 Pulsed collector current, Tpulse limited by TJmax Diode Forward Current @ TC = 25°C @ TC = 100°C Diode Pulsed Current Tpulse Limited by TJmax Short−circuit withstand time VGE = 15 V, VCE = 300 V, TJ ≤ +150°C Gate−emitter voltage Transient Gate Emitter Voltage (tp = 5 ms, D < 0.010) Power Dissipation @ TC = 25°C @ TC = 100°C ICM 160 A IF A 80 40 IFM 160 A tSC 5 ms VGE $20 V $30 PD W 257 102 Operating junction temperature range TJ −55 to +150 °C Storage temperature range Lead temperature for soldering, 1/8” from case for 5 seconds Tstg TSLD −55 to +150 °C 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating ...