IGBT. FGH40N60SFD Datasheet

FGH40N60SFD IGBT. Datasheet pdf. Equivalent

FGH40N60SFD Datasheet
Recommendation FGH40N60SFD Datasheet
Part FGH40N60SFD
Description IGBT
Feature FGH40N60SFD; IGBT - Field Stop 600 V, 40 A FGH40N60SFDTU, FGH40N60SFDTU-F085 Description Using Novel Field Stop I.
Manufacture ON Semiconductor
Datasheet
Download FGH40N60SFD Datasheet




ON Semiconductor FGH40N60SFD
IGBT - Field Stop
600 V, 40 A
FGH40N60SFDTU,
FGH40N60SFDTU-F085
Description
Using Novel Field Stop IGBT Technology, ON Semiconductor’s
new series of Field Stop IGBTs offer the optimum performance for
Automotive Chargers, Inverter, and other applications where low
conduction and switching losses are essential.
Features
High Current Capability
Low Saturation Voltage: VCE(sat) = 2.3 V @ IC = 40 A
High Input Impedance
Fast Switching
Qualified to Automotive Requirements of AECQ101
(FGH40N60SFDTUF085)
These Devices are PbFree and are RoHS Compliant
Applications
Automotive Chargers, Converters, High Voltage Auxiliaries
Inverters, PFC, UPS
www.onsemi.com
C
G
E
E
C
G
COLLECTOR
(FLANGE)
TO2473LD
CASE 340CK
MARKING DIAGRAM
$Y&Z&3&K
FGH40N60
SFD
$Y&Z&3&K
FGH40N60
SFDTU
© Semiconductor Components Industries, LLC, 2015
February, 2020 Rev. 3
Industrial
Automotive
$Y
&Z
&3
&K
FGH40N60SFD,
FGH40N60SFDTU
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
1
Publication Order Number:
FGH40N60SFDTUF085/D



ON Semiconductor FGH40N60SFD
FGH40N60SFDTU, FGH40N60SFDTUF085
ABSOLUTE MAXIMUM RATINGS
Description
Symbol
Ratings
Unit
Collector to Emitter Voltage
Gate to Emitter Voltage
Transient GatetoEmitter Voltage
VCES
VGES
600
V
±20
V
±30
V
Collector Current
TC = 25°C
TC = 100°C
IC
80
A
40
A
Pulsed Collector Current
Maximum Power Dissipation
TC = 25°C
TC = 25°C
TC = 100°C
ICM (Note 1)
120
A
PD
290
W
116
W
Operating Junction Temperature
TJ
55 to +150 °C
Storage Temperature Range
Tstg
55 to +150 °C
Maximum Lead Temperature for Soldering, 1/8from Case for 5 Seconds
TL
300
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive rating: Pulse width limited by max. junction temperature.
THERMAL CHARACTERISTICS
Parameter
Thermal Resistance, JunctiontoCase
Thermal Resistance, JunctiontoCase
Thermal Resistance, JunctiontoAmbient
Symbol
RqJC (IGBT)
RqJC (Diode)
RqJA
Value
0.43
1.45
40
Unit
°C/W
°C/W
°C/W
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Mark
Package
FGH40N60SFDTU
FGH40N60SFD
TO247
FGH40N60SFDTUF085* FGH40N60SFDTU TO247
*Qualified to Automotive Requirements of AECQ101
Package Method
Tube
Tube
Reel Size
Tape Width
Quantity
30
30
ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted)
Parameter
Symbol
Test Conditions
OFF CHARACTERISTICS
Collector to Emitter Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
BVCES
DBVCES/DTJ
VGE = 0 V, IC = 250 mA
VGE = 0 V, IC = 250 mA
Collector CutOff Current
GE Leakage Current
ON CHARACTERISTICs
GE Threshold Voltage
Collector to Emitter Saturation Voltage
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
ICES
IGES
VCE = VCES, VGE = 0 V
VGE = VGES, VCE = 0 V
VGE(th)
VCE(sat)
IC = 250 mA, VCE = VGE
IC = 40 A, VGE = 15 V
IC = 40 A, VGE = 15 V, TC = 125°C
Cies
Coes
Cres
VCE = 30 V, VGE = 0 V, f = 1 MHz
Min
Typ
Max Unit
600
0.6
V
V/°C
250
mA
±400 nA
4.0
4.7
6.5
V
2.3
2.9
V
2.5
V
1920
pF
190
pF
65
pF
www.onsemi.com
2



ON Semiconductor FGH40N60SFD
FGH40N60SFDTU, FGH40N60SFDTUF085
ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted) (continued)
Parameter
Symbol
Test Conditions
Min
SWITCHING CHARACTERISTICS
TurnOn Delay Time
Rise Time
TurnOff Delay Time
Fall Time
TurnOn Switching Loss
TurnOff Switching Loss
Total Switching Loss
TurnOn Delay Time
Rise Time
TurnOff Delay Time
Fall Time
TurnOn Switching Loss
TurnOff Switching Loss
Total Switching Loss
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Qg
Qge
Qgc
VCC = 400 V, IC = 40 A,
RG = 10 W, VGE = 15 V,
Inductive Load, TC = 25°C
VCC = 400 V, IC = 40 A,
RG = 10 W, VGE = 15 V,
Inductive Load, TC = 125°C
VCE = 400 V, IC = 40 A, VGE = 15 V
Typ
21
35
138
18
1.23
0.38
1.61
21
39
144
48
1.58
0.58
2.16
121
16
68
Max Unit
ns
ns
ns
54
ns
mJ
mJ
mJ
ns
ns
ns
ns
mJ
mJ
mJ
nC
nC
nC
ELECTRICAL CHARACTERISTICS OF THE DIODE (TJ = 25°C unless otherwise noted)
Parametr
Symbol
Test Conditions
Min
Typ
Max Unit
Diode Forward Voltage
VFM
IF = 20 A
TC = 25°C
1.80
2.6
V
TC = 125°C
1.70
Diode Reverse Recovery Time
trr
IF = 20 A, diF/dt = 200 A/ms
TC = 25°C
68
ns
TC = 125°C
240
Diode Reverse Recovery Charge
Qrr
TC = 25°C
160
nC
TC = 125°C
840
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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3







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