IGBT
IGBT - Field Stop 600 V, 40 A
FGH40N60SFDTU, FGH40N60SFDTU-F085
Description Using Novel Field Stop IGBT Technology, ON S...
Description
IGBT - Field Stop 600 V, 40 A
FGH40N60SFDTU, FGH40N60SFDTU-F085
Description Using Novel Field Stop IGBT Technology, ON Semiconductor’s
new series of Field Stop IGBTs offer the optimum performance for Automotive Chargers, Inverter, and other applications where low conduction and switching losses are essential.
Features
High Current Capability Low Saturation Voltage: VCE(sat) = 2.3 V @ IC = 40 A High Input Impedance Fast Switching Qualified to Automotive Requirements of AEC−Q101
(FGH40N60SFDTU−F085)
These Devices are Pb−Free and are RoHS Compliant
Applications
Automotive Chargers, Converters, High Voltage Auxiliaries Inverters, PFC, UPS
www.onsemi.com C
G E
E C G
COLLECTOR (FLANGE)
TO−247−3LD CASE 340CK
MARKING DIAGRAM
$Y&Z&3&K FGH40N60 SFD
$Y&Z&3&K FGH40N60 SFDTU
© Semiconductor Components Industries, LLC, 2015
February, 2020 − Rev. 3
Industrial
Automotive
$Y &Z &3 &K FGH40N60SFD, FGH40N60SFDTU
= ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
1
Publication Order Number:
FGH40N60SFDTU−F085/D
FGH40N60SFDTU, FGH40N60SFDTU−F085
ABSOLUTE MAXIMUM RATINGS
Description
Symbol
Ratings
Unit
Collector to Emitter Voltage Gate to Emitter Voltage Transient Gate−to−Emitter Voltage
VCES VGES
600
V
±20
V
±30
V
Collector Current
TC = 25°C TC = 100°C
IC
80
A
40
A
Pulsed Collector Current Maximum Powe...
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