Low-leakage diode. BAS116 Datasheet

BAS116 diode. Datasheet pdf. Equivalent

BAS116 Datasheet
Recommendation BAS116 Datasheet
Part BAS116
Description Low-leakage diode
Feature BAS116; BAS116 Low-leakage diode 5 August 2020 Product data sheet 1. General description Epitaxial medium-.
Manufacture nexperia
Datasheet
Download BAS116 Datasheet




nexperia BAS116
BAS116
Low-leakage diode
5 August 2020
Product data sheet
1. General description
Epitaxial medium-speed switching diode with a low leakage current in a small SOT23 plastic SMD
package.
2. Features and benefits
Plastic SMD package
Low leakage current: typ. 3 pA
Switching time: typ. 0.8 us
Continuous reverse voltage: max. 75 V
Repetitive peak reverse voltage: max. 85 V
Repetitive peak forward current: max. 500 mA.
AEC-Q101 qualified
3. Applications
Low leakage current applications in surface mounted circuits.
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
IF
VRRM
forward current
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
repetitive peak reverse Tj = 25 °C
voltage
VF
forward voltage
IF = 50 mA; tp ≤ 300 µs; δ ≤ 0.02;
Tj = 25 °C
IR
reverse current
VR = 75 V; pulsed; Tj = 25 °C
trr
reverse recovery time IF = 10 mA; IR = 10 mA; RL = 100 Ω;
IR(meas) = 1 mA; Tj = 25 °C
Min Typ Max Unit
-
-
215 mA
-
-
85
V
-
-
1.1 V
-
0.003 5
nA
-
0.8 3
µs
5. Pinning information
Table 2. Pinning information
Pin
Symbol Description
1
A
anode
2
n.c.
not connected
3
K
cathode
Simplified outline
3
1
2
SOT23
Graphic symbol
K
A
n.c.
006aaa764



nexperia BAS116
Nexperia
BAS116
Low-leakage diode
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
BAS116
SOT23
Description
Version
plastic, surface-mounted package; 3 terminals; 1.9 mm pitch; 2.9 SOT23
mm x 1.3 mm x 1 mm body
7. Marking
Table 4. Marking codes
Type number
BAS116
[1] % = placeholder for manufacturing site code
Marking code[1]
JV%
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
VRRM
repetitive peak reverse Tj = 25 °C
-
voltage
VR
reverse voltage
-
IF
forward current
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
-
IFSM
non-repetitive peak
tp = 1 µs; square wave; Tj(init) = 25 °C
-
forward current
tp = 1 ms; square wave; Tj(init) = 25 °C
-
tp = 1 s; square wave; Tj(init) = 25 °C
-
IFRM
repetitive peak forward
-
current
Ptot
total power dissipation
Per device, one diode loaded
Tamb ≤ 25 °C
[1]
-
Tj
junction temperature
-
Tamb
ambient temperature
-65
Tstg
storage temperature
-65
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
Max
85
75
215
4
1
0.5
500
250
150
150
150
Unit
V
V
mA
A
A
A
mA
mW
°C
°C
°C
BAS116
Product data sheet
All information provided in this document is subject to legal disclaimers.
5 August 2020
© Nexperia B.V. 2020. All rights reserved
2 / 10



nexperia BAS116
Nexperia
BAS116
Low-leakage diode
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Rth(j-a)
thermal resistance from In free air
[1]
junction to ambient
Rth(j-sp)
thermal resistance from
[2]
junction to solder point
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Soldering point of cathode tab.
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
VF
forward voltage
IR
reverse current
Cd
diode capacitance
trr
reverse recovery time
Conditions
IF = 1 mA; tp ≤ 300 µs; δ ≤ 0.02;
Tj = 25 °C
IF = 10 mA; tp ≤ 300 µs; δ ≤ 0.02;
Tj = 25 °C
IF = 50 mA; tp ≤ 300 µs; δ ≤ 0.02;
Tj = 25 °C
IF = 150 mA; tp ≤ 300 µs; δ ≤ 0.02;
Tj = 25 °C
VR = 75 V; pulsed; Tj = 25 °C
VR = 75 V; pulsed; Tj = 150 °C
VR = 0 V; f = 1 MHz; Tj = 25 °C
IF = 10 mA; IR = 10 mA; RL = 100 Ω;
IR(meas) = 1 mA; Tj = 25 °C
300
IF
(mA)
mlb755
300
IF
(mA)
200
200
Min Typ Max Unit
-
-
500 K/W
-
-
330 K/W
Min Typ Max Unit
-
-
0.9 V
-
-
1
V
-
-
1.1 V
-
-
1.25 V
-
0.003 5
nA
-
3
80
nA
-
2
-
pF
-
0.8 3
µs
mlb752
(1) (2)
(3)
100
100
0
0
100
200
Tamb (°C)
Fig. 1. Forward current as a function of ambient
temperature; derating curve
0
0
0.4
0.8
1.2
1.6
VF (V)
(1) Tamb = 150 °C; typical values
(2) Tamb = 25 °C; typical values
(3) Tamb = 25 °C; maximum values
Fig. 2. Forward current as a function of forward
voltage; per diode
BAS116
Product data sheet
All information provided in this document is subject to legal disclaimers.
5 August 2020
© Nexperia B.V. 2020. All rights reserved
3 / 10







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