Schottky Rectifier. VS-10CTQ150-M3 Datasheet

VS-10CTQ150-M3 Rectifier. Datasheet pdf. Equivalent

VS-10CTQ150-M3 Datasheet
Recommendation VS-10CTQ150-M3 Datasheet
Part VS-10CTQ150-M3
Description High Performance Schottky Rectifier
Feature VS-10CTQ150-M3; www.vishay.com VS-10CTQ150-M3 Vishay Semiconductors High Performance Schottky Rectifier, 2 x 5 A .
Manufacture Vishay
Datasheet
Download VS-10CTQ150-M3 Datasheet




Vishay VS-10CTQ150-M3
www.vishay.com
VS-10CTQ150-M3
Vishay Semiconductors
High Performance Schottky Rectifier, 2 x 5 A
Base 4
common
cathode
3L TO-220AB
Anode
2
Anode
1 Common 3
cathode
PRIMARY CHARACTERISTICS
IF(AV)
2x5A
VR
150 V
VF at IF
0.73 V
IRM max.
7 mA at 125 °C
TJ max.
175 °C
EAS
6.75 mJ
Package
3L TO-220AB
Circuit configuration
Common cathode
FEATURES
• 175 °C TJ operation
• Center tap configuration
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
• Designed and qualified according to JEDEC®-JESD 47
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
This center tap Schottky rectifier series has been optimized
for low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 175 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF
TJ
Rectangular waveform
tp = 5 μs sine
5 Apk, TJ = 125 °C (per leg)
Range
VALUES
10
150
620
0.73
-55 to +175
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
VR
VRWM
VS-10CTQ150-M3
150
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward
current, see fig. 5
per leg
per device
IF(AV)
TEST CONDITIONS
50 % duty cycle at TC = 155 °C, rectangular waveform
VALUES
5
10
Maximum peak one cycle non-repetitive
surge current per leg, see fig. 7
Non-repetitive avalanche energy per leg
Repetitive avalanche current per leg
5 μs sine or 3 μs rect. pulse Following any rated load
620
IFSM
condition and with rated
10 ms sine or 6 ms rect. pulse VRRM applied
115
EAS
TJ = 25 °C, IAS = 0.30 A, L = 150 mH
IAR
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
6.75
0.30
UNITS
A
A
mJ
A
Revision: 20-Sep-17
1
Document Number: 96245
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



Vishay VS-10CTQ150-M3
www.vishay.com
VS-10CTQ150-M3
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop per leg
See fig. 1
VFM (1)
Maximum reverse leakage current per leg
See fig. 2
Threshold voltage
Forward slope resistance
Maximum junction capacitance per leg
Typical series inductance per leg
Maximum voltage rate of change
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
IRM (1)
VF(TO)
rt
CT
LS
dV/dt
5A
10 A
5A
10 A
TJ = 25 °C
TJ = 125 °C
TEST CONDITIONS
TJ = 25 °C
TJ = 125 °C
VR = Rated VR
TJ = TJ maximum
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C
Measured lead to lead 5 mm from package body
Rated VR
VALUES
0.93
1.10
0.73
0.86
0.05
7
0.468
28
200
8.0
10 000
UNITS
V
mA
V
m
pF
nH
V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case per leg
Maximum thermal resistance,
junction to case per package
Typical thermal resistance,
case to heatsink (only for TO-220)
TJ, TStg
RthJC
DC operation
RthCS Mounting surface, smooth, and greased
Approximate weight
Mounting torque
Marking device
minimum
maximum
Case style 3L TO-220AB
VALUES
-55 to +175
UNITS
°C
3.50
1.75
°C/W
0.50
2
g
0.07
oz.
6 (5)
12 (10)
kgf · cm
(lbf · in)
10CTQ150
Revision: 20-Sep-17
2
Document Number: 96245
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



Vishay VS-10CTQ150-M3
www.vishay.com
100
TJ = 175 °C
10
TJ = 125 °C
TJ = 25 °C
1
0
0.5 1.0 1.5 2.0 2.5 3.0
VFM - Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics (Per Leg)
1000
VS-10CTQ150-M3
Vishay Semiconductors
100
TJ = 175 °C
10
TJ = 150 °C
1
TJ = 125 °C
0.1
TJ = 100 °C
0.01
0.001
0.0001
0
TJ = 75 °C
TJ = 50 °C
TJ = 25 °C
25
50
75 100 125 150
VR - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
(Per Leg)
100
TJ = 25 °C
10
0 20 40 60 80 100 120 140 160
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
10
1
D = 0.75
D = 0.50
0.1 D = 0.33
D = 0.25
P
DM
t
1
D = 0.20
t
2
0.01
Single pulse
(thermal resistance)
Notes:
1. Duty factor D = t1/t2 .
2. Peak TJ = PDM x ZthJC + TC
.
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg)
Revision: 20-Sep-17
3
Document Number: 96245
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000







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