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VS-10CTQ150-M3
Vishay Semiconductors
High Performance Schottky Rectifier, 2 x 5 A
Base 4 common cathod...
www.vishay.com
VS-10CTQ150-M3
Vishay Semiconductors
High Performance
Schottky Rectifier, 2 x 5 A
Base 4 common cathode
3L TO-220AB
Anode
2
Anode
1 Common 3
cathode
PRIMARY CHARACTERISTICS
IF(AV)
2x5A
VR
150 V
VF at IF
0.73 V
IRM max.
7 mA at 125 °C
TJ max.
175 °C
EAS
6.75 mJ
Package
3L TO-220AB
Circuit configuration
Common cathode
FEATURES
175 °C TJ operation Center tap configuration Low forward voltage drop High frequency operation High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term
reliability Designed and qualified according to JEDEC®-JESD 47 Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
This center tap
Schottky rectifier series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV) VRRM IFSM VF TJ
Rectangular waveform
tp = 5 μs sine 5 Apk, TJ = 125 °C (per leg) Range
VALUES 10 150 620 0.73
-55 to +175
UNITS A V A V °C
VOLTAGE RATINGS
PARAMETER Maximum DC reverse voltage Maximum working peak reverse voltage
SYMBOL VR
VRWM
VS-10CTQ150-M3 150
UNITS V
ABSOLUTE MAXIMUM RATINGS
...