VS-10CTQ150-M3

www.vishay.com VS-10CTQ150-M3 Vishay Semiconductors High Performance Schottky Rectifier, 2 x 5 A Base 4 common cathode 3L TO-220AB Anode 2 Anode 1 Common 3 cathode PRIMARY CHARACTERISTICS IF(AV) 2x5A VR 150 V VF at IF 0.73 V IRM max. 7 mA at 125 °C TJ max. 175 °C EAS 6.75 mJ Package 3L TO-220AB Circuit configuration Common cathode FEATURES 175 °C TJ operation Center tap configuration Low forward voltage drop High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability Designed and qualified according to JEDEC®-JESD 47 Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION This center tap Schottky rectifier series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS IF(AV) VRRM IFSM VF TJ Rectangular waveform tp = 5 μs sine 5 Apk, TJ = 125 °C (per leg) Range VALUES 10 150 620 0.73 -55 to +175 UNITS A V A V °C VOLTAGE RATINGS PARAMETER Maximum DC reverse voltage Maximum working peak reverse voltage SYMBOL VR VRWM VS-10CTQ150-M3 150 UNITS V ABSOLUTE MAXIMUM RATINGS ...