Static RAM. 71016 Datasheet

71016 RAM. Datasheet pdf. Equivalent

71016 Datasheet
Recommendation 71016 Datasheet
Part 71016
Description CMOS Static RAM
Feature 71016; CMOS Static RAM 1 Meg (64K x 16-Bit) 71016S Features ◆ 64K x 16 advanced high-speed CMOS Static RA.
Manufacture Renesas
Datasheet
Download 71016 Datasheet




Renesas 71016
CMOS Static RAM
1 Meg (64K x 16-Bit)
71016S
Features
64K x 16 advanced high-speed CMOS Static RAM
Equal access and cycle times
– Commercial : 12/15/20ns
– Industrial: 15/20ns
One Chip Select plus one Output Enable pin
Bidirectional data inputs and outputs directly TTL-
compatible
Low power consumption via chip deselect
Upper and Lower Byte Enable Pins
Commercial and industrial product available in 44-pin
Plastic SOJ package and 44-pin TSOP package
Functional Block Diagram
Output
OE
Enable
Buffer
Description
The IDT71016 is a 1,048,576-bit high-speed Static RAM organized
as 64K x 16. It is fabricated using high-performance, high-reliability CMOS
technology. This state-of-the-art technology, combined with innovative
circuit design techniques, provides a cost-effective solution for high-speed
memory needs.
The IDT71016 has an output enable pin which operates as fast as 7ns,
with address access times as fast as 12ns. All bidirectional inputs and
outputs of the IDT71016 are TTL-compatible and operation is from a single
5V supply. Fully static asynchronous circuitry is used, requiring no clocks
or refresh for operation.
The IDT71016 is packaged in a JEDEC standard 44-pin Plastic SOJ
and 44-pin TSOP Type II.
A0 - A15
Address
Buffers
Chip
CS
Enable
Buffer
Write
WE
Enable
Buffer
BHE
BLE
Byte
Enable
Buffers
Row / Column
Decoders
64K x 16
Memory
Array
8
Sense
16
Amps
and
Write
Drivers
8
High
Byte
I/O
Buffer
Low
Byte
I/O
Buffer
, I/O 15
8
I/O 8
I/O 7
8
I/O 0
3210 drw 01
1
Jun.02.20



Renesas 71016
71016 CMOS Static RAM
1 Meg (64K x 16-bit)
Pin Configurations(1)
A4
1
A3
2
A2
3
A1
4
A0
5
CS
6
I/O 0
7
I/O 1
8
I/O 2
9
I/O 3
10
VCC
11
VSS
12
I/O 4
13
I/O 5
14
I/O 6
15
I/O 7
16
WE
17
A15
18
A14
19
A13
20
A12
21
NC
22
71016
PBG44
PHG44
44
A5
43
A6
42
A7
41
OE
40
BHE
39
BLE
38
I/O 15
37
I/O 14
36
I/O 13
35
I/O 12
34
VSS
33
, VCC
32
I/O 11
31
I/O 10
30
I/O 9
29
I/O 8
28
NC
27
A8
26
A9
25
A10
24
A11
23
NC
SOJ/TSOP
Top View
3210 drw 02
NOTE:
1. This text does not indicate orientation of actual part-marking.
Commercial and Industrial Temperature Ranges
Pin Descriptions
A0 - A15
Address Inputs
Input
CS
Chip Select
Input
WE
Write Enable
Input
OE
BHE
BLE
I/O0 - I/O15
VCC
VSS
Output Enable
High Byte Enable
Low Byte Enable
Data Input/Output
5.0V Power
Ground
Input
Input
Input
I/O
Pwr
Gnd
3210 tbl 01
Truth Table (1)
CS
OE
WE BLE BHE
H
X
X
X
X
L
L
H
L
H
L
L
H
H
L
L
L
H
L
L
L
X
L
L
L
L
X
L
L
H
L
X
L
H
L
L
H
H
X
X
L
X
X
H
H
NOTE:
1. H = VIH, L = VIL, X = Don't care.
I/O0 - I/O7
High-Z
DATAOUT
High-Z
DATAOUT
DATAIN
DATAIN
High-Z
High-Z
High-Z
I/O8 - I/O15
High-Z
High-Z
DATAOUT
DATAOUT`
DATAIN
High-Z
DATAIN
High-Z
High-Z
6.422
Jun.02.20
Function
Deselected - Standby
Low Byte Read
High Byte Read
Word Read
Word Write
Low Byte Write
High Byte Write
Outputs Disabled
Outputs Disabled
3210 tbl 02



Renesas 71016
71016 CMOS Static RAM
1 Meg (64K x 16-bit)
Absolute Maximum Ratings(1)
Symbol
Rating
Value
Unit
VTERM(2)
Terminal Voltage with
Respect to GND
-0.5 to +7.0
V
TBIAS
Temperature
Under Bias
-55 to +125
oC
TSTG
Storage
Temperature
-55 to +125
oC
PT
Power Dissipation
1.25
W
IOUT
DC Output Current
50
mA
NOTES:
3210 tbl 03a
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in the
operational sections of this specification is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect reliability.
2. VTERM must not exceed VCC + 0.5V.
Commercial and Industrial Temperature Ranges
Recommended Operating
Temperature and Supply Voltage
Grade
Temperature
GND
VCC
Commercial
0°C to +70°C
0V
5.0V ± 10%
Industrial
–40°C to +85°C
0V
5.0V ± 10%
3210 tbl 04
Recommended DC Operating
Conditions
Symbol
Parameter
Min. Typ. Max. Unit
VCC Supply Voltage
4.5
5.0
5.5
V
GND Ground
0
0
0
V
VIH Input High Voltage
2.2
____ VDD +0.5 V
VIL Input Low Voltage
-0.5(1)
____
0.8
V
NOTE:
3210 tbl 05
1. VIL (min.) = –1.5V for pulse width less than tRC/2, once per cycle.
Capacitance
(TA = +25° C, f = 1.0MHz, SOJ/TSOP Package)
Symbol
Parameter(1)
Conditions Max. Unit
CIN Input Capacitance
VIN = 3dV
6 pF
CI/O I/O Capacitance
VOUT = 3dV
7 pF
NOTE:
3210 tbl 06
1. This parameter is guaranteed by device characterization, but not production
tested.
DC Electrical Characteristics
(VCC = 5.0V ± 10%, Commercial and Industrial Temperature Range)
Symbol
Parameter
Test Conditions
Min.
Max. Unit
|ILI|
Input Leakage Current
VCC = Max., VIN = GND to VCC
__ _
5
µA
|ILO|
Output Leakage Current
VCC = Max., CS = VIH, VOUT = GND to VCC
__ _
5
µA
VOL
Output Low Voltage
IOL = 8mA, VCC = Min.
__ _
0.4
V
VOH
Output High Voltage
IOH = -4mA, VCC = Min.
2.4
___
V
3210 tbl 07
DC Electrical Characteristics(1)
(VCC = 5.0V ± 10%, VLC = 0.2V, VHC = VCC–0.2V)
71016S12
71016S15
71016S20
Symbol
Parameter
Com'l. Com'l. Ind. Com'l. Ind. Unit
ICC
Dynamic Operating Current
CS < VIL, Outputs Open, VCC = Max., f = fMAX(2)
210
180
180
170
170
mA
ISB
Standby Power Supply Current (TTL Level)
CS > VIH, Outputs Open, VCC = Max., F = fMAX(2)
60
50
50
45
45
mA
Standby Power Supply Current (CMOS Level)
ISB1
CS > VHC, Outputs Open, VCC = Max., f = 0(2)
VIN < VLC or VIN > VHC
10
10
10
10
10
mA
NOTES:
1. All values are maximum guaranteed values.
2. fMAX = 1/tRC (all address inputs are cycling at fMAX); f = 0 means no address input lines are changing .
3210 tbl 08
6.432
Jun.02.20





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