Document
CMOS Static RAM 1 Meg (64K x 16-Bit)
71016S
Features
◆ 64K x 16 advanced high-speed CMOS Static RAM ◆ Equal access and cycle times
– Commercial : 12/15/20ns – Industrial: 15/20ns ◆ One Chip Select plus one Output Enable pin ◆ Bidirectional data inputs and outputs directly TTLcompatible ◆ Low power consumption via chip deselect ◆ Upper and Lower Byte Enable Pins ◆ Commercial and industrial product available in 44-pin Plastic SOJ package and 44-pin TSOP package
Functional Block Diagram
Output
OE
Enable
Buffer
Description
The IDT71016 is a 1,048,576-bit high-speed Static RAM organized as 64K x 16. It is fabricated using high-performance, high-reliability CMOS technology. This state-of-the-art technology, combined with innovative circuit design techniques, provides a cost-effective solution for high-speed memory needs.
The IDT71016 has an output enable pin which operates as fast as 7ns, with address access times as fast as 12ns. All bidirectional inputs and outputs of the IDT71016 are TTL-compatible and operation is from a single 5V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation.
The IDT71016 is packaged in a JEDEC standard 44-pin Plastic SOJ and 44-pin TSOP Type II.
A0 - A15
Address Buffers
Chip
CS
Enable
Buffer
Write
WE
Enable
Buffer
BHE BLE
Byte Enable Buffers
Row / Column Decoders
64K x 16 Memory
Array
8
Sense
16
Amps
and
Write
Drivers
8
High Byte I/O Buffer
Low Byte I/O Buffer
, I/O 15
8 I/O 8
I/O 7 8
I/O 0
3210 drw 01
1 Jun.02.20
71016 CMOS Static RAM 1 Meg (64K x 16-bit)
Pin Configurations(1)
A4
1
A3
2
A2
3
A1
4
A0
5
CS
6
I/O 0
7
I/O 1
8
I/O 2
9
I/O 3
10
VCC
11
VSS
12
I/O 4
13
I/O 5
14
I/O 6
15
I/O 7
16
WE
17
A15
18
A14
19
A13
20
A12
21
NC
22
71016 PBG44
PHG44
44
A5
43
A6
42
A7
41
OE
40
BHE
39
BLE
38
I/O 15
37
I/O 14
36
I/O 13
35
I/O 12
34
VSS
33
, VCC
32
I/O 11
31
I/O 10
30
I/O 9
29
I/O 8
28
NC
27
A8
26
A9
25
A10
24
A11
23
NC
SOJ/TSOP Top View
3210 drw 02
NOTE: 1. This text does not indicate orientation of actual part-marking.
Commercial and Industrial Temperature Ranges
Pin Descriptions
A0 - A15
Address Inputs
Input
CS
Chip Select
Input
WE
Write Enable
Input
OE BHE BLE I/O0 - I/O15 VCC VSS
Output Enable High Byte Enable Low Byte Enable Data Input/Output
5.0V Power Ground
Input Input Input I/O Pwr Gnd
3210 tbl 01
Truth Table (1)
CS
OE
WE BLE BHE
H
X
X
X
X
L
L
H
L
H
L
L
H
H
L
L
L
H
L
L
L
X
L
L
L
L
X
L
L
H
L
X
L
H
L
L
H
H
X
X
L
X
X
H
H
NOTE: 1. H = VIH, L = VIL, X = Don't care.
I/O0 - I/O7 High-Z
DATAOUT High-Z
DATAOUT DATAIN DATAIN High-Z High-Z High-Z
I/O8 - I/O15 High-Z High-Z
DATAOUT DATAOUT`
DATAIN High-Z DATAIN High-Z High-Z
6.422 Jun.02.20
Function Deselected - Standby
Low Byte Read High Byte Read
Word Read Word Write Low Byte Write High Byte Write Outputs Disabled Outputs Disabled
3210 tbl 02
71016 CMOS Static RAM 1 Meg (64K x 16-bit)
Absolute Maximum Ratings(1)
Symbol
Rating
Value
Unit
VTERM(2)
Terminal Voltage with Respect to GND
-0.5 to +7.0
V
TBIAS
Temperature
Under Bias
-55 to +125
oC
TSTG
Storage
Temperature
-55 to +125
oC
PT
Power Dissipation
1.25
W
IOUT
DC Output Current
50
mA
NOTES:
3210 tbl 03a
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in the
operational sections of this specification is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect reliability.
2. VTERM must not exceed VCC + 0.5V.
Commercial and Industrial Temperature Ranges
Recommended Operating Temperature and Supply Voltage
Grade
Temperature
GND
VCC
Commercial
0°C to +70°C
0V
5.0V ± 10%
Industrial
–40°C to +85°C
0V
5.0V ± 10%
3210 tbl 04
Recommended DC Operating Conditions
Symbol
Parameter
Min. Typ. Max. Unit
VCC Supply Voltage
4.5
5.0
5.5
V
GND Ground
0
0
0
V
VIH Input High Voltage
2.2
____ VDD +0.5 V
VIL Input Low Voltage
-0.5(1)
____
0.8
V
NOTE:
3210 tbl 05
1. VIL (min.) = –1.5V for pulse width less than tRC/2, once per cycle.
Capacitance
(TA = +25° C, f = 1.0MHz, SOJ/TSOP Package)
Symbol
Parameter(1)
Conditions Max. Unit
CIN Input Capacitance
VIN = 3dV
6 pF
CI/O I/O Capacitance
VOUT = 3dV
7 pF
NOTE:
3210 tbl 06
1. This parameter is guaranteed by device characterization, but not production
tested.
DC Electrical Characteristics
(VCC = 5.0V ± 10%, Commercial and Industrial Temperature Range)
Symbol
Parameter
Test Conditions
Min.
Max. Unit
|ILI|
Input Leakage Current
VCC = Max., VIN = GND to VCC
__ _
5
µA
|ILO|
Output Leakage Current
VCC = Max., CS = VIH, VOUT = GND to VCC
__ _
5
µA
VOL
Output Low Voltage
IOL = 8mA, VC.