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71016 Dataheets PDF



Part Number 71016
Manufacturers Renesas
Logo Renesas
Description CMOS Static RAM
Datasheet 71016 Datasheet71016 Datasheet (PDF)

CMOS Static RAM 1 Meg (64K x 16-Bit) 71016S Features ◆ 64K x 16 advanced high-speed CMOS Static RAM ◆ Equal access and cycle times – Commercial : 12/15/20ns – Industrial: 15/20ns ◆ One Chip Select plus one Output Enable pin ◆ Bidirectional data inputs and outputs directly TTLcompatible ◆ Low power consumption via chip deselect ◆ Upper and Lower Byte Enable Pins ◆ Commercial and industrial product available in 44-pin Plastic SOJ package and 44-pin TSOP package Functional Block Diagram Output .

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CMOS Static RAM 1 Meg (64K x 16-Bit) 71016S Features ◆ 64K x 16 advanced high-speed CMOS Static RAM ◆ Equal access and cycle times – Commercial : 12/15/20ns – Industrial: 15/20ns ◆ One Chip Select plus one Output Enable pin ◆ Bidirectional data inputs and outputs directly TTLcompatible ◆ Low power consumption via chip deselect ◆ Upper and Lower Byte Enable Pins ◆ Commercial and industrial product available in 44-pin Plastic SOJ package and 44-pin TSOP package Functional Block Diagram Output OE Enable Buffer Description The IDT71016 is a 1,048,576-bit high-speed Static RAM organized as 64K x 16. It is fabricated using high-performance, high-reliability CMOS technology. This state-of-the-art technology, combined with innovative circuit design techniques, provides a cost-effective solution for high-speed memory needs. The IDT71016 has an output enable pin which operates as fast as 7ns, with address access times as fast as 12ns. All bidirectional inputs and outputs of the IDT71016 are TTL-compatible and operation is from a single 5V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation. The IDT71016 is packaged in a JEDEC standard 44-pin Plastic SOJ and 44-pin TSOP Type II. A0 - A15 Address Buffers Chip CS Enable Buffer Write WE Enable Buffer BHE BLE Byte Enable Buffers Row / Column Decoders 64K x 16 Memory Array 8 Sense 16 Amps and Write Drivers 8 High Byte I/O Buffer Low Byte I/O Buffer , I/O 15 8 I/O 8 I/O 7 8 I/O 0 3210 drw 01 1 Jun.02.20 71016 CMOS Static RAM 1 Meg (64K x 16-bit) Pin Configurations(1) A4 1 A3 2 A2 3 A1 4 A0 5 CS 6 I/O 0 7 I/O 1 8 I/O 2 9 I/O 3 10 VCC 11 VSS 12 I/O 4 13 I/O 5 14 I/O 6 15 I/O 7 16 WE 17 A15 18 A14 19 A13 20 A12 21 NC 22 71016 PBG44 PHG44 44 A5 43 A6 42 A7 41 OE 40 BHE 39 BLE 38 I/O 15 37 I/O 14 36 I/O 13 35 I/O 12 34 VSS 33 , VCC 32 I/O 11 31 I/O 10 30 I/O 9 29 I/O 8 28 NC 27 A8 26 A9 25 A10 24 A11 23 NC SOJ/TSOP Top View 3210 drw 02 NOTE: 1. This text does not indicate orientation of actual part-marking. Commercial and Industrial Temperature Ranges Pin Descriptions A0 - A15 Address Inputs Input CS Chip Select Input WE Write Enable Input OE BHE BLE I/O0 - I/O15 VCC VSS Output Enable High Byte Enable Low Byte Enable Data Input/Output 5.0V Power Ground Input Input Input I/O Pwr Gnd 3210 tbl 01 Truth Table (1) CS OE WE BLE BHE H X X X X L L H L H L L H H L L L H L L L X L L L L X L L H L X L H L L H H X X L X X H H NOTE: 1. H = VIH, L = VIL, X = Don't care. I/O0 - I/O7 High-Z DATAOUT High-Z DATAOUT DATAIN DATAIN High-Z High-Z High-Z I/O8 - I/O15 High-Z High-Z DATAOUT DATAOUT` DATAIN High-Z DATAIN High-Z High-Z 6.422 Jun.02.20 Function Deselected - Standby Low Byte Read High Byte Read Word Read Word Write Low Byte Write High Byte Write Outputs Disabled Outputs Disabled 3210 tbl 02 71016 CMOS Static RAM 1 Meg (64K x 16-bit) Absolute Maximum Ratings(1) Symbol Rating Value Unit VTERM(2) Terminal Voltage with Respect to GND -0.5 to +7.0 V TBIAS Temperature Under Bias -55 to +125 oC TSTG Storage Temperature -55 to +125 oC PT Power Dissipation 1.25 W IOUT DC Output Current 50 mA NOTES: 3210 tbl 03a 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 2. VTERM must not exceed VCC + 0.5V. Commercial and Industrial Temperature Ranges Recommended Operating Temperature and Supply Voltage Grade Temperature GND VCC Commercial 0°C to +70°C 0V 5.0V ± 10% Industrial –40°C to +85°C 0V 5.0V ± 10% 3210 tbl 04 Recommended DC Operating Conditions Symbol Parameter Min. Typ. Max. Unit VCC Supply Voltage 4.5 5.0 5.5 V GND Ground 0 0 0 V VIH Input High Voltage 2.2 ____ VDD +0.5 V VIL Input Low Voltage -0.5(1) ____ 0.8 V NOTE: 3210 tbl 05 1. VIL (min.) = –1.5V for pulse width less than tRC/2, once per cycle. Capacitance (TA = +25° C, f = 1.0MHz, SOJ/TSOP Package) Symbol Parameter(1) Conditions Max. Unit CIN Input Capacitance VIN = 3dV 6 pF CI/O I/O Capacitance VOUT = 3dV 7 pF NOTE: 3210 tbl 06 1. This parameter is guaranteed by device characterization, but not production tested. DC Electrical Characteristics (VCC = 5.0V ± 10%, Commercial and Industrial Temperature Range) Symbol Parameter Test Conditions Min. Max. Unit |ILI| Input Leakage Current VCC = Max., VIN = GND to VCC __ _ 5 µA |ILO| Output Leakage Current VCC = Max., CS = VIH, VOUT = GND to VCC __ _ 5 µA VOL Output Low Voltage IOL = 8mA, VC.


IDT71016S 71016 PES1-S3-S3-M


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