TTD1415B

Bipolar Transistors Silicon NPN Triple-Diffused Type TTD1415B TTD1415B 1. Applications High-Power Switching Hammer Drivers 2. Features (1) High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) (2) Low collector-emitter saturation voltage: VCE(sat) = 1.5 V (max) (IC = 3 A , IB = 6 mA) (3) Complementary to TTB1020B 3. Packaging and Internal Circuit TO-220SIS 1. Base 2. Collector 3. Emitter ©2015 Toshiba Corporation 1 Start of commercial production 2012-09 2015-08-06 Rev.3.0 TTD1415B 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (pulsed) Base current Collector power dissipation Collector power dissipation Junction temperature Storage temperature Mounting torque (Tc = 25 ) (Note 1) (Note 1) VCBO VCEO VEBO IC ICP IB PC PC Tj Tstg TOR 120 100 6 7 10 0.7 2 25 150 -55 to 150 0.6 V A W  Nm Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods...