NPN Transistor. TTD1415B Datasheet

TTD1415B Transistor. Datasheet pdf. Equivalent

TTD1415B Datasheet
Recommendation TTD1415B Datasheet
Part TTD1415B
Description Silicon NPN Transistor
Feature TTD1415B; Bipolar Transistors Silicon NPN Triple-Diffused Type TTD1415B TTD1415B 1. Applications • High-Powe.
Manufacture Toshiba
Datasheet
Download TTD1415B Datasheet





Toshiba TTD1415B
Bipolar Transistors Silicon NPN Triple-Diffused Type
TTD1415B
TTD1415B
1. Applications
• High-Power Switching
• Hammer Drivers
2. Features
(1) High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A)
(2) Low collector-emitter saturation voltage: VCE(sat) = 1.5 V (max) (IC = 3 A , IB = 6 mA)
(3) Complementary to TTB1020B
3. Packaging and Internal Circuit
TO-220SIS
1. Base
2. Collector
3. Emitter
©2015 Toshiba Corporation
1
Start of commercial production
2012-09
2015-08-06
Rev.3.0



Toshiba TTD1415B
TTD1415B
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current (pulsed)
Base current
Collector power dissipation
Collector power dissipation
Junction temperature
Storage temperature
Mounting torque
(Tc = 25 )
(Note 1)
(Note 1)
VCBO
VCEO
VEBO
IC
ICP
IB
PC
PC
Tj
Tstg
TOR
120
100
6
7
10
0.7
2
25
150
-55 to 150
0.6
V
A
W
Nm
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Ensure that the junction temperature does not exceed 150 .
5. Electrical Characteristics
5.1. Static Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Symbol
Test Condition
ICBO
IEBO
V(BR)CEO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
VCB = 120 V, IE = 0 A
VEB = 6 V, IC = 0 A
IC = 50 mA, IB = 0 A
VCE = 3 V, IC = 3 A
VCE = 3 V, IC = 6 A
IC = 3 A, IB = 6 mA
IC = 3 A, IB = 6 mA
Min
0.75
100
2000
1000
5.2. Dynamic Characteristics (Ta = 25 unless otherwise specified)
Typ. Max Unit
2
µA
3.0
mA
V
15000
0.9
1.5
V
1.5
2.0
Characteristics
Switching time (turn-on time)
Switching time (storage time)
Switching time (fall time)
Symbol
Test Condition
ton
See Figure 5.2.1.
tstg
VCC 45 V, RL = 15 ,
IB1 = -IB2 = 6 mA,
tf
Duty cycle 1%
Min Typ. Max Unit
0.3
µs
5.1
0.6
Fig. 5.2.1 Switching Time Test Circuit
©2015 Toshiba Corporation
2
2015-08-06
Rev.3.0



Toshiba TTD1415B
6. Marking (Note)
TTD1415B
Fig. 6.1 Marking
Note:
A line under a Lot No. identifies the indication of product Labels.
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product.
The RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the
restriction of the use of certain hazardous substances in electrical and electronic equipment.
©2015 Toshiba Corporation
3
2015-08-06
Rev.3.0





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