Recovery Diode. VS-HFA30PA60C-N3 Datasheet

VS-HFA30PA60C-N3 Diode. Datasheet pdf. Equivalent

VS-HFA30PA60C-N3 Datasheet
Recommendation VS-HFA30PA60C-N3 Datasheet
Part VS-HFA30PA60C-N3
Description Ultrafast Soft Recovery Diode
Feature VS-HFA30PA60C-N3; www.vishay.com VS-HFA30PA60C-N3 Vishay Semiconductors HEXFRED® Ultrafast Soft Recovery Diode, 2 x .
Manufacture Vishay
Datasheet
Download VS-HFA30PA60C-N3 Datasheet




Vishay VS-HFA30PA60C-N3
www.vishay.com
VS-HFA30PA60C-N3
Vishay Semiconductors
HEXFRED®
Ultrafast Soft Recovery Diode, 2 x 15 A
1
2
3
TO-247AC 3L
Common
cathode
2, Base
FEATURES
• Ultrafast and ultrasoft recovery
• Very low IRRM and Qrr
• Designed and qualified according to
JEDEC®-JESD 47
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
1
Anode
1
3
Anode
2
PRIMARY CHARACTERISTICS
IF(AV)
2 x 15 A
VR
VF at IF
600 V
1.2 V
trr typ.
19 ns
TJ max.
150 °C
Package
TO-247AC 3L
Circuit configuration
Common cathode
DESCRIPTION
VS-HFA30PA60C... is a state of the art center tap ultrafast
recovery diode. Employing the latest in epitaxial
construction and advanced processing techniques it
features a superb combination of characteristics which
result in performance which is unsurpassed by any rectifier
previously available. With basic ratings of 600 V and 15 A
per leg continuous current, the VS-HFA30PA60C... is
especially well suited for use as the companion diode for
IGBTs and MOSFETs. In addition to ultrafast recovery time,
the HEXFRED® product line features extremely low values of
peak recovery current (IRRM) and does not exhibit any
tendency to “snap-off” during the tb portion of recovery. The
HEXFRED features combine to offer designers a rectifier
with lower noise and significantly lower switching losses in
both the diode and the switching transistor. These
HEXFRED advantages can help to significantly reduce
snubbing, component count and heatsink sizes. The
HEXFRED VS-HFA30PA60C... is ideally suited for
applications in power supplies and power conversion
systems (such as inverters), motor drives, and many other
similar applications where high speed, high efficiency is
needed.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
per leg
Maximum continuous forward current
per device
Single pulse forward current
Maximum repetitive forward current
Maximum power dissipation
Operating junction and storage temperature range
SYMBOL
VR
IF
IFSM
IFRM
PD
TJ, TStg
TEST CONDITIONS
TC = 100 °C
tp = 10 ms
TC = 25 °C
TC = 100 °C
VALUES
600
15
30
150
60
74
29
-55 to +150
UNITS
V
A
W
°C
Revision: 10-Jul-2020
1
Document Number: 94068
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



Vishay VS-HFA30PA60C-N3
www.vishay.com
VS-HFA30PA60C-N3
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS PER LEG (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
Cathode to anode
breakdown voltage
VBR
IR = 100 μA
600
-
IF = 15 A
-
1.3
Maximum forward voltage
VFM
IF = 30 A
See fig. 1
-
1.5
IF = 15 A, TJ = 125 °C
-
1.2
Maximum reverse
leakage current
VR = VR rated
-
1.0
IRM
See fig. 2
TJ = 125 °C, VR = 0.8 x VR rated
-
400
Junction capacitance
CT
VR = 200 V
See fig. 3
-
25
Series inductance
LS
Measured lead to lead 5 mm from package body
-
12
MAX.
-
1.7
2.0
1.6
10
1000
50
-
UNITS
V
μA
pF
nH
DYNAMIC RECOVERY CHARACTERISTICS PER LEG (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP. MAX.
Reverse recovery time
See fig. 5, 10
Peak recovery current
See fig. 6
Reverse recovery charge
See fig. 7
trr
trr1
trr2
IRRM1
IRRM2
Qrr1
Qrr2
IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
IF = 15 A
dIF/dt = 200 A/μs
VR = 200 V
-
19
-
-
42
60
-
70
120
-
4.0
6.0
-
6.5
10
-
80
180
-
220
600
Peak rate of fall of
recovery current during tb
See fig. 8
dI(rec)M/dt1 TJ = 25 °C
dI(rec)M/dt2 TJ = 125 °C
-
250
-
-
160
-
UNITS
ns
A
nC
A/μs
THERMAL-MECHANICAL SPECIFICATIONS PER LEG
PARAMETER
SYMBOL
TEST CONDITIONS
Lead temperature
Junction to case,
single leg conduction
Junction to case,
both legs conducting
Thermal resistance,
junction to ambient
Thermal resistance,
case to heatsink
Tlead
0.063” from case (1.6 mm) for 10 s
RthJC
RthJA
RthCS
Typical socket mount
Mounting surface, flat, smooth, and greased
Weight
Mounting torque
Marking device
Case style TO-247AC 3L
MIN.
-
-
-
-
-
-
-
6.0
(5.0)
TYP.
-
-
MAX.
300
1.7
UNITS
°C
-
0.85
K/W
-
40
0.25
-
6.0
-
0.21
-
-
12
(10)
HFA30PA60C
g
oz.
kgf · cm
(lbf · in)
Revision: 10-Jul-2020
2
Document Number: 94068
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



Vishay VS-HFA30PA60C-N3
www.vishay.com
100
TJ = 150 °C
10
TJ = 125 °C
TJ = 25 °C
1
1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
VFM - Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop vs.
Instantaneous Forward Current (Per Leg)
100
VS-HFA30PA60C-N3
Vishay Semiconductors
10 000
1000
TJ = 150 °C
100
TJ = 125 °C
10
1
0.1
0.01
0
TJ = 25 °C
100 200 300 400 500 600
VR - Reverse Voltage (V)
Fig. 2 - Typical Reverse Current vs. Reverse Voltage (Per Leg)
TJ = 25 °C
10
0
100 200 300 400 500 600
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
10
1
0.1
0.01
0.00001
Single pulse
(thermal response)
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
P
DM
t
1
t
2
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
0.0001
0.001
0.01
0.1
1
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg)
Revision: 10-Jul-2020
3
Document Number: 94068
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)