Schottky rectifier. PS20M100SR Datasheet

PS20M100SR rectifier. Datasheet pdf. Equivalent

PS20M100SR Datasheet
Recommendation PS20M100SR Datasheet
Part PS20M100SR
Description Power Schottky rectifier
Feature PS20M100SR; STPS20M100S Datasheet 100 V, 20 A power Schottky rectifier A K A K A K A TO-220AB K A K A TO-220F.
Manufacture STMicroelectronics
Datasheet
Download PS20M100SR Datasheet





STMicroelectronics PS20M100SR
STPS20M100S
Datasheet
100 V, 20 A power Schottky rectifier
A
K
A
K
A
K
A
TO-220AB
K
A
K
A
TO-220FPAB
A
AK
I2PAK
K
K
A
A
A
A
D2PAK
Product status link
STPS20M100S
Product summary
IF(AV)
20 A
VRRM
100 V
VF (typ.)
0.61 V
Tj (max.)
150 °C
Features
• Low forward voltage drop meaning very small conduction losses
• Avalanche rated
• Low frequency operation
• Insulated package TO-220FPAB:
– Insulating voltage = 2000 VRMS sine
ECOPACK®2 compliant component for D²PAK on demand
Applications
• Switching diode
• SMPS
• DC/DC converter
• LED lighting
• Adapter for notebook and game station
Description
This single Schottky rectifier is suited for high frequency switch mode power supply.
Packaged in TO-220AB, TO-220FPAB, D²PAK and I²PAK, the STPS20M100S is
intended to be used in notebook, game station and desktop adaptors, providing in
these applications a good efficiency at both low and high load.
DS6169 - Rev 5 - February 2019
For further information contact your local STMicroelectronics sales office.
www.st.com



STMicroelectronics PS20M100SR
STPS20M100S
Characteristics
1
Characteristics
Table 1. Absolute ratings (limiting values with anode terminals short circuited, at 25 °C unless otherwise
specified)
Symbol
Parameter
VRRM Repetitive peak reverse voltage
IF(RMS) Forward rms current
IF(AV) Average forward current δ = 0.5, square wave
TO-220AB
D²PAK
I²PAK
TC = 130 °C
TO-220FPAB TC = 85 °C
IFSM Surge non repetitive forward current
tp = 10 ms sinusoidal
PARM Repetitive peak avalanche power
tp = 10 µs, Tj = 125 °C
Tstg Storage temperature range
Tj
Maximum operating junction temperature (1)
1. (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.
Value Unit
100
V
30
A
20
A
350
A
1150
W
-65 to +175 °C
+150
°C
Symbol
Rth(j-c)
Junction to case
Table 2. Thermal resistance parameter
Parameter
TO-220AB, D²PAK, I²PAK
TO-220FPAB
Value
1.2
4
Unit
°C/W
For more information, please refer to the following application note :
• AN5088 : Rectifiers thermal management, handling and mounting recommendations
Table 3. Static electrical characteristics (anode terminals short circuited)
Symbol
Parameter
IR (1)
Reverse leakage current
VF (2)
Forward voltage drop
1. Pulse test: tp = 5 ms, δ < 2%
2. Pulse test: tp = 380 µs, δ < 2%
Test conditions
Tj = 25 °C
Tj = 125 °C
VR = 70 V
Tj = 25 °C
Tj = 125 °C
VR = 100 V
Tj = 25 °C
Tj = 125 °C
IF = 5 A
Tj = 25 °C
Tj = 125 °C
IF = 10 A
Tj = 25 °C
Tj = 125 °C
IF = 20 A
Min. Typ. Max. Unit
-
5
µA
-
5
mA
-
10
40
µA
-
10
40
mA
-
550
-
455
-
660
730
mV
-
530
600
-
775
850
-
610
690
DS6169 - Rev 5
page 2/15



STMicroelectronics PS20M100SR
STPS20M100S
Characteristics (curves)
To evaluate the conduction losses, use the following equation:
P = 0.425 x IF(AV) + 0.0088 x IF 2 (RMS)
For more information, please refer to the following application notes related to the power losses :
• AN604: Calculation of conduction losses in a power rectifier
• AN4021: Calculation of reverse losses on a power diode
1.1
Characteristics (curves)
Figure 1. Average forward power dissipation versus
average forward current (anode terminals short circuited)
Figure 2. Average forward current versus ambient
temperature (δ = 0.5, anode terminals short circuited)
PF(AV) (W)
20
18
16
14
12
δ = 0.1
δ = 0.05
10
8
6
4
2
0
0 2 4 6 8 10
δ = 0.2
IF(AV)(A)
12 14 16 18
δ = 0.5
δ=1
T
δ= tp/T
tp
20 22 24 26 28
IF(AV) (A)
22
20
Rth(j-a) = Rth(j-c)
TO-220AB/I²PAK/D²PAK
18
16
TO-220FPAB
14
12
10
Rth(j-a) = 15 °C/W
8
6
T
4
2
δ= tp/T
tp
Tamb(°C)
0
0
25
50
75
100
125
150
Figure 3. Normalized avalanche power derating versus
pulse duration (Tj = 125 °C)
PARM (t p )
1 PARM(10 µs)
0.1
0.01
0.001
1
t p(µs)
10
100
1000
Figure 4. Reverse leakage current versus reverse voltage
applied (typical values)
IR(mA)
1.E+02
1.E+01
Tj = 150 °C
Tj = 125 °C
1.E+00
Tj = 100 °C
1.E-01
1.E-02
1.E-03
0
10 20
Tj = 75 °C
Tj = 50 °C
Tj = 25 °C
VR(V)
30 40 50 60 70 80 90 100
DS6169 - Rev 5
page 3/15





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