Schottky rectifier. STPS30L100CTN Datasheet

STPS30L100CTN rectifier. Datasheet pdf. Equivalent

STPS30L100CTN Datasheet
Recommendation STPS30L100CTN Datasheet
Part STPS30L100CTN
Description Power Schottky rectifier
Feature STPS30L100CTN; STPS30L60C Power Schottky rectifier Features ■ Low forward voltage drop ■ Negligible switching los.
Manufacture STMicroelectronics
Datasheet
Download STPS30L100CTN Datasheet





STMicroelectronics STPS30L100CTN
STPS30L60C
Power Schottky rectifier
Features
Low forward voltage drop
Negligible switching losses
Low thermal resistance
Avalanche capability specified
Description
These dual center tap Schottky rectifiers are
suited for switched mode power supplies and high
frequency DC to DC converters.
Packaged in TO-220FPAB, TO-220AB narrow
leads, TO-220AB, D2PAK, I2PAK and TO-247, this
device is intended for use in high frequency
inverters.
Figure 1. Electrical characteristics (a)
V
I
"Forward"
I
2 x IO
X
VRRM
VAR VR
IF
IO
IR
X
V
"Reverse"
VTo VF(Io) VF VF(2xIo)
Datasheet production data
A1
A2
K
A2
A1
D2PAK
STPS30L60CG
K
A2
K
A1
TO-220FPAB
STPS30L60CFP
A2
K
A1
TO-220AB
STPS30L60CT
K
A2
K
A1
I2PAK
STPS30L60CR
A2
A1 K
TO-220AB narrow leads
STPS30L100CTN
A2
K
A1
TO-247
STPS30L60CW
IAR
a. VARM and IARM must respect the reverse safe
operating area defined in Figure 12 VAR and IAR are
pulse measurements (tp < 1 µs). VR, IR, VRRM and VF,
are static characteristics
Table 1. Device summary
Symbol
IF(AV)
VRRM
Tj (max)
VF (max)
Value
2 x 15 A
60 V
150 °C
0.56 V
June 2012
This is information on a product in full production.
Doc ID 6479 Rev 10
1/13
www.st.com
13



STMicroelectronics STPS30L100CTN
Characteristics
1
Characteristics
STPS30L60C
Table 2. Absolute ratings (limiting values, per diode)
Symbol
Parameter
Value Unit
VRRM
IF(RMS)
IF(AV)
Repetitive peak reverse voltage
Forward rms current
Average forward current
TO-220AB narrow leads,
TO-220AB, I2PAK, D2PAK,
TO-247, δ = 0.5
TO-220FPAB, δ = 0.5
IFSM Surge non repetitive forward current
IRRM Repetitive peak reverse current
PARM(1) Repetitive peak avalanche power
VARM (2) Maximum repetitive peak avalanche voltage
VASM (2) Maximum single pulse peak avalanche voltage
Tstg
Tj
dV/dt
Storage temperature range
Maximum operating junction temperature(3)
Critical rate of rise reverse voltage
60
V
30
A
Per diode
Tc = 130 °C Per device
Per diode
Tc = 110 °C Per device
tp = 10 ms, sinusoidal
tp = 2 µs square, F = 1
kHz
tp = 1 µs, Tj = 25 °C
tp < 1 µs, Tj < 150 °C,
IAR < 29 A
tp < 1 µs, Tj < 150 °C,
IAR < 29 A
15
30
A
15
30
230
A
2
A
7800
W
80
V
80
V
-65 to + 175 °C
150
°C
10000 V/µs
1. For temperature or pulse time duration deratings, refer to Figure 4 and Figure 5. More details regarding the avalanche
energy measurements and diode validation in the avalanche are provided in the application notes AN1768 and AN2025.
2. Refer to Figure 12.
3.
dPtot
dTj
<1
Rth(j-a)
condition to avoid thermal runaway for a diode on its own heatsink
Table 3. Thermal resistances
Symbol
Parameter
Value
Unit
Rth(j-c) Junction to case
Rth(c) Coupling
TO-220AB narrow leads,
Per diode
TO-220AB, I2PAK, D2PAK, TO-247 Total
TO-220FPAB
Per diode
Total
TO-220AB narrow leads, TO-220AB, I2PAK,
D2PAK, TO-247
TO-220FPAB
1.5
0.8
4.7
3.95
°C/W
0.1
3.2
When the diodes 1 and 2 are used simultaneously:
ΔTj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode2) x Rth(c)
2/13
Doc ID 6479 Rev 10



STMicroelectronics STPS30L100CTN
STPS30L60C
Characteristics
Table 4. Static electrical characteristics (per diode)
Symbol
Parameter
Tests conditions
Min. Typ. Max. Unit
IR (1) Reverse leakage current
VF (1) Forward voltage drop
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
VR = VRRM
IF = 15 A
IF = 15 A
IF = 30 A
IF = 30 A
480
µA
77
130
mA
0.6
0.5
0.56
V
0.75
0.65
0.7
1. Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation: P = 0.42 x IF(AV) + 0.009x IF2(RMS)
Figure 2.
Average forward power dissipation
versus average forward current
(per diode)
PF(av)(W)
12
δ = 0.1 δ = 0.2
δ = 0.5
δ=1
10
δ = 0.05
8
Figure 3. Average forward current versus
ambient temperature
(δ = 0.5, per diode)
18 IF(av)(A)
16
Rth(j-a)=Rth(j-c)
TO-220AB, TO-220AB narrow leads, I2PAK, D2PAK, TO-247
14
12
TO-220FPAB
10
6
8
Rth(j-a)=15 °C/W
6
4
T
T
4
2
2
δ=tp/T
tp
Tamb(°C)
IF(av) (A)
δ=tp/T
tp
0
0
0
25
50
75
100
125
150
0 2 4 6 8 10 12 14 16 18 20
Figure 4. Normalized avalanche power
derating versus pulse duration
Figure 5.
Normalized avalanche power
derating versus junction
temperature
PARM(tp)
PARM(1 µs)
1
0.1
0.01
0.001
0.01
0.1
tp(µs)
1
10
PARM(Tj)
PARM(25 °C)
1.2
1
0.8
0.6
0.4
0.2
0
100
1000
25
50
Tj(°C)
75
100
125
150
Doc ID 6479 Rev 10
3/13





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)