4A SCRs. TS420-600B Datasheet

TS420-600B SCRs. Datasheet pdf. Equivalent

TS420-600B Datasheet
Recommendation TS420-600B Datasheet
Part TS420-600B
Description Sensitive gate 4A SCRs
Feature TS420-600B; Features  On-state RMS current: 4 A  Repetitive peak off-state voltage (VDRM, VRRM) 600 V  Trigge.
Manufacture STMicroelectronics
Datasheet
Download TS420-600B Datasheet




STMicroelectronics TS420-600B
Features
On-state RMS current: 4 A
Repetitive peak off-state voltage (VDRM,
VRRM) 600 V
Triggering gate current, IGT 0.2 mA
TS420
Sensitive gate 4 A SCRs
Datasheet - production data
Description
Thanks to highly sensitive triggering levels, the
device is suitable for all applications where the
available gate current is limited, such as motor
control for hand tools, kitchen aids, overvoltage
crowbar protection for low power supplies among
others.
Available in through-hole and surface-mount
packages, they provide an optimized
performance in a limited space area.
Table 1: Device summary
Order code
Sensitivity
Package
TS420-600B
DPAK
TS420-600H
0.2 mA
IPAK
TS420-600T
TO-220AB
October 2017
DocID5203 Rev 6
This is information on a product in full production.
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www.st.com



STMicroelectronics TS420-600B
Characteristics
TS420
1
Characteristics
Symbol
IT(RMS)
IT(AV)
ITSM
I2t
dl/dt
IGM
PG(AV)
VRGM
Tstg
Tj
Table 2: Absolute ratings (limiting values)
Parameter
RMS on-state current (180 ° conduction angle)
Average on-state current (180 ° conduction angle)
Non repetitive surge peak on-state
current
I2t value for fusing
tp = 8.3 ms
tp = 10 ms
tp = 10 ms
Critical rate of rise of on-state
current
IG = 10 mA, dlG / dt = 0.1 A/µs
f = 60 Hz
Peak gate current
tp = 20 µs
Average gate power dissipation
TC = 115°C
TC = 115°C
Tj initial = 25 °C
Tj = 25 °C
Tj = 125 °C
Maximum peak reverse gate voltage
Storage junction temperature range
Maximum operating junction temperature
Value
4
2.5
33
30
4.5
50
1.2
0.2
5
-40 to +150
-40 to +125
Unit
A
A
A
A2s
A/µs
A
W
V
°C
°C
Table 3: Device timings
Symbol
Parameter
Test conditions
tGT Gate controlled turn on time
tQ
Circuit controlled turn off time
ITM = 10 A,
Tj = 25 °C,
VD = VDRM(max.),
IGT = 10 mA,
dIG/dt = 0.2 A/μs,
RG = 1 kΩ
ITM = 8 A,
Tj = 125 °C,
VD = 67% VDRM(max.),
VR = 10 V,
dIT/dt = 10 A/μs,
dVD/dt = 2 V/μs,
RG = 1 kΩ
Value Unit
0.5 (typ.)
µs
60 (typ.)
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DocID5203 Rev 6



STMicroelectronics TS420-600B
TS420
Symbol
IGT
VGT
VGD
IH
IL
dV/dt
VTM
VT0
RD
IDRM
IRRM
Characteristics
Table 4: Electrical characteristics (Tj = 25 °C unless otherwise specified)
Test Conditions
Value Unit
VD = 12 V, RL = 33 Ω
Max. 200
µA
Max. 0.8
V
VD = VDRM, RL = 33 kΩ, RGK = 220 Ω
IT = 50 mA, RGK = 1 kΩ
IG = 2 mA, RGK = 1
VD = 67 % VDRM, RGK = 220 Ω
ITM = 8 A, tP = 380 µs
Threshold voltage
Dynamic resistance
VD = VR =VDRM = VRRM; RGK = 220 Ω
Tj = 125 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
Min.
Max.
Max.
Min.
Max.
Max.
Max.
Max.
0.1
5
6
5
1.6
0.85
90
5
1
V
mA
mA
V/µs
V
V
µA
mA
Symbol
Rth(j-c)
Rth(j-a)
Table 5: Thermal parameters
Parameter
Junction to case (DC)
S(1) = 0.5 cm²
DPAK
Junction to ambient (DC)
IPAK
TO-220AB
Notes:
(1)Copper surface under tab
Value
3.0
70
100
60
Unit
°C/W
DocID5203 Rev 6
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