Document
Features
On-state RMS current: 4 A Repetitive peak off-state voltage (VDRM,
VRRM) 600 V Triggering gate current, IGT 0.2 mA
TS420
Sensitive gate 4 A SCRs
Datasheet - production data
Description
Thanks to highly sensitive triggering levels, the device is suitable for all applications where the available gate current is limited, such as motor control for hand tools, kitchen aids, overvoltage crowbar protection for low power supplies among others.
Available in through-hole and surface-mount packages, they provide an optimized performance in a limited space area.
Table 1: Device summary
Order code
Sensitivity
Package
TS420-600B
DPAK
TS420-600H
0.2 mA
IPAK
TS420-600T
TO-220AB
October 2017
DocID5203 Rev 6
This is information on a product in full production.
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Characteristics
TS420
1
Characteristics
Symbol IT(RMS) IT(AV)
ITSM
I2t
dl/dt
IGM PG(AV) VRGM
Tstg Tj
Table 2: Absolute ratings (limiting values)
Parameter
RMS on-state current (180 ° conduction angle)
Average on-state current (180 ° conduction angle)
Non repetitive surge peak on-state current
I2t value for fusing
tp = 8.3 ms tp = 10 ms tp = 10 ms
Critical rate of rise of on-state current
IG = 10 mA, dlG / dt = 0.1 A/µs
f = 60 Hz
Peak gate current
tp = 20 µs
Average gate power dissipation
TC = 115°C TC = 115°C Tj initial = 25 °C Tj = 25 °C
Tj = 125 °C
Maximum peak reverse gate voltage
Storage junction temperature range
Maximum operating junction temperature
Value 4 2.5 33 30 4.5
50
1.2 0.2 5 -40 to +150 -40 to +125
Unit A A
A
A2s
A/µs
A W V °C °C
Table 3: Device timings
Symbol
Parameter
Test conditions
tGT Gate controlled turn on time
tQ
Circuit controlled turn off time
ITM = 10 A, Tj = 25 °C, VD = VDRM(max.), IGT = 10 mA, dIG/dt = 0.2 A/μs, RG = 1 kΩ
ITM = 8 A, Tj = 125 °C, VD = 67% VDRM(max.), VR = 10 V, dIT/dt = 10 A/μs, dVD/dt = 2 V/μs, RG = 1 kΩ
Value Unit 0.5 (typ.)
µs 60 (typ.)
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TS420
Symbol IGT VGT VGD IH IL
dV/dt VTM VT0 RD IDRM IRRM
Characteristics
Table 4: Electrical characteristics (Tj = 25 °C unless otherwise specified)
Test Conditions
Value Unit
VD = 12 V, RL = 33 Ω
Max. 200
µA
Max. 0.8
V
VD = VDRM, RL = 33 kΩ, RGK = 220 Ω IT = 50 mA, RGK = 1 kΩ IG = 2 mA, RGK = 1 kΩ VD = 67 % VDRM, RGK = 220 Ω ITM = 8 A, tP = 380 µs Threshold voltage Dynamic resistance
VD = VR =VDRM = VRRM; RGK = 220 Ω
Tj = 125 °C
Tj = 125 °C Tj = 25 °C Tj = 125 °C Tj = 125 °C Tj = 25 °C Tj = 125 °C
Min. Max. Max. Min. Max. Max. Max.
Max.
0.1 5 6 5 1.6 0.85 90 5 1
V mA mA V/µs V V mΩ µA mA
Symbol Rth(j-c)
Rth(j-a)
Table 5: Thermal parameters Parameter
Junction to case (DC)
S(1) = 0.5 cm²
DPAK
Junction to ambient (DC)
IPAK
TO-220AB
Notes:
(1)Copper surface under tab
Value 3.0 70 100 60
Unit °C/W
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Characteristics
1.1
Characteristics (curves)
Figure 1: Maximum average power dissipation versus average on-state current
TS420
Figure 2: Average and DC on-state current versus case.