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TS420-600T Dataheets PDF



Part Number TS420-600T
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description Sensitive gate 4A SCRs
Datasheet TS420-600T DatasheetTS420-600T Datasheet (PDF)

Features  On-state RMS current: 4 A  Repetitive peak off-state voltage (VDRM, VRRM) 600 V  Triggering gate current, IGT 0.2 mA TS420 Sensitive gate 4 A SCRs Datasheet - production data Description Thanks to highly sensitive triggering levels, the device is suitable for all applications where the available gate current is limited, such as motor control for hand tools, kitchen aids, overvoltage crowbar protection for low power supplies among others. Available in through-hole and surface-mo.

  TS420-600T   TS420-600T



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Features  On-state RMS current: 4 A  Repetitive peak off-state voltage (VDRM, VRRM) 600 V  Triggering gate current, IGT 0.2 mA TS420 Sensitive gate 4 A SCRs Datasheet - production data Description Thanks to highly sensitive triggering levels, the device is suitable for all applications where the available gate current is limited, such as motor control for hand tools, kitchen aids, overvoltage crowbar protection for low power supplies among others. Available in through-hole and surface-mount packages, they provide an optimized performance in a limited space area. Table 1: Device summary Order code Sensitivity Package TS420-600B DPAK TS420-600H 0.2 mA IPAK TS420-600T TO-220AB October 2017 DocID5203 Rev 6 This is information on a product in full production. 1/14 www.st.com Characteristics TS420 1 Characteristics Symbol IT(RMS) IT(AV) ITSM I2t dl/dt IGM PG(AV) VRGM Tstg Tj Table 2: Absolute ratings (limiting values) Parameter RMS on-state current (180 ° conduction angle) Average on-state current (180 ° conduction angle) Non repetitive surge peak on-state current I2t value for fusing tp = 8.3 ms tp = 10 ms tp = 10 ms Critical rate of rise of on-state current IG = 10 mA, dlG / dt = 0.1 A/µs f = 60 Hz Peak gate current tp = 20 µs Average gate power dissipation TC = 115°C TC = 115°C Tj initial = 25 °C Tj = 25 °C Tj = 125 °C Maximum peak reverse gate voltage Storage junction temperature range Maximum operating junction temperature Value 4 2.5 33 30 4.5 50 1.2 0.2 5 -40 to +150 -40 to +125 Unit A A A A2s A/µs A W V °C °C Table 3: Device timings Symbol Parameter Test conditions tGT Gate controlled turn on time tQ Circuit controlled turn off time ITM = 10 A, Tj = 25 °C, VD = VDRM(max.), IGT = 10 mA, dIG/dt = 0.2 A/μs, RG = 1 kΩ ITM = 8 A, Tj = 125 °C, VD = 67% VDRM(max.), VR = 10 V, dIT/dt = 10 A/μs, dVD/dt = 2 V/μs, RG = 1 kΩ Value Unit 0.5 (typ.) µs 60 (typ.) 2/14 DocID5203 Rev 6 TS420 Symbol IGT VGT VGD IH IL dV/dt VTM VT0 RD IDRM IRRM Characteristics Table 4: Electrical characteristics (Tj = 25 °C unless otherwise specified) Test Conditions Value Unit VD = 12 V, RL = 33 Ω Max. 200 µA Max. 0.8 V VD = VDRM, RL = 33 kΩ, RGK = 220 Ω IT = 50 mA, RGK = 1 kΩ IG = 2 mA, RGK = 1 kΩ VD = 67 % VDRM, RGK = 220 Ω ITM = 8 A, tP = 380 µs Threshold voltage Dynamic resistance VD = VR =VDRM = VRRM; RGK = 220 Ω Tj = 125 °C Tj = 125 °C Tj = 25 °C Tj = 125 °C Tj = 125 °C Tj = 25 °C Tj = 125 °C Min. Max. Max. Min. Max. Max. Max. Max. 0.1 5 6 5 1.6 0.85 90 5 1 V mA mA V/µs V V mΩ µA mA Symbol Rth(j-c) Rth(j-a) Table 5: Thermal parameters Parameter Junction to case (DC) S(1) = 0.5 cm² DPAK Junction to ambient (DC) IPAK TO-220AB Notes: (1)Copper surface under tab Value 3.0 70 100 60 Unit °C/W DocID5203 Rev 6 3/14 Characteristics 1.1 Characteristics (curves) Figure 1: Maximum average power dissipation versus average on-state current TS420 Figure 2: Average and DC on-state current versus case.


TS420-600H TS420-600T X0405NF


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