DatasheetsPDF.com

DMG3N60SJ3 Dataheets PDF



Part Number DMG3N60SJ3
Manufacturers Diodes
Logo Diodes
Description N-CHANNEL MOSFET
Datasheet DMG3N60SJ3 DatasheetDMG3N60SJ3 Datasheet (PDF)

DMG3N60SJ3 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS (@ TJ Max) 650V RDS(ON) Max 3.5Ω @ VGS = 10V ID @TC = +25°C 2.8A Description and Applications This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.  Motor Control  Backlighting  DC-DC Converters  Power Management Functions Features and Benefits  Low On-Resistance  High BVDSS Ra.

  DMG3N60SJ3   DMG3N60SJ3


Document
DMG3N60SJ3 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS (@ TJ Max) 650V RDS(ON) Max 3.5Ω @ VGS = 10V ID @TC = +25°C 2.8A Description and Applications This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.  Motor Control  Backlighting  DC-DC Converters  Power Management Functions Features and Benefits  Low On-Resistance  High BVDSS Rating for Power Application  Low Input Capacitance  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/ Mechanical Data  Case: TO251  Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminal Connections: See Diagram  Terminals: Finish – Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208  Weight: 0.33 grams (Approximate) TO251 (Type TH) Top View Bottom View GDS Top View Pin Configuration Internal Schematic Ordering Information (Note 4) Notes: Part Number DMG3N60SJ3 Case TO251 (Type TH) Packaging 75 Pieces/Tube 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. Marking Information 3N60SJ YYWW DMG3N60SJ3 Document number: DS39314 Rev. 3 - 2 = Manufacturer’s Marking 3N60SJ = Product Type Marking Code YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 20 = 2020) WW = Week Code (01 to 53) 1 of 7 www.diodes.com June 2020 © Diodes Incorporated Maximum Ratings (@TA = +25°C, unless otherwise specified.) Drain-Source Voltage Gate-Source Voltage Characteristic Continuous Drain Current (Note 5) VGS = 10V Continuous Drain Current (Note 5) VGS = 10V Maximum Body Diode Forward Current (Note 5) Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) Avalanche Current, L = 60mH (Note 7) Avalanche Energy, L = 60mH (Note 7) Peak Diode Recovery dv/dt Steady State Steady State TC = +25°C TC = +100°C TA = +25°C Symbol VDSS VGSS ID ID IS IDM IAS EAS dv/dt DMG3N60SJ3 Value 600 ±30 2.8 1.8 0.7 2.5 4.2 1.0 33 5 Unit V V A A A A A mJ V/ns Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Total Power Dissipation (Note 5) Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 6) Thermal Resistance, Junction to Case (Note 5) Operating and Storage Temperature Range TC = +25°C TC = +100°C TA = +25°C Symbol PD PD RθJA RθJC TJ, TSTG Value 41 16 2.5 49 3.0 -55 to +150 Unit W W °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Static Drain-Source On-Resistance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Symbol BVDSS IDSS IGSS VGS(TH) RDS(ON) VSD Ciss Coss Crss RG QG QGS QGD tD(ON) tR tD(OFF) tF tRR QRR Min 600   2.0                Typ    3.0 2.9 0.87 354 41 4 2.6 12.6 1.7 7.1 10.6 22 34 28 198 952 Max  1 100 4.0 3.5 1.5              Notes: 5. Device mounted on infinite heatsink. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout. 7. Guaranteed by design. Not subject to production testing. 8. Short duration pulse test used to minimize self-heating effect. Unit Test Condition V VGS = 0V, ID = 250µA µA VDS = 600V, VGS = 0V nA VGS = ±30V, VDS = 0V V VDS = VGS, ID = 250µA Ω VGS = 10V, ID = 1.5A V VGS = 0V, IS = 3.0A pF VDS = 25V, f = 1.0MHz, VGS = 0V Ω VDS = 0V, VGS = 0V, f = 1.0MHz nC VDD = 480V, ID = 2.5A, VGS = 10V ns VDD = 300V, RG = 25Ω, ID = 2.5.


DMG3N60SJ3 DMG3N60SJ3 DMG4N60SCT


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)