Document
DMG3N60SJ3
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS (@ TJ Max)
650V
RDS(ON) Max 3.5Ω @ VGS = 10V
ID @TC = +25°C
2.8A
Description and Applications
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Motor Control Backlighting DC-DC Converters Power Management Functions
Features and Benefits
Low On-Resistance High BVDSS Rating for Power Application Low Input Capacitance Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications requiring specific change control
(i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/
Mechanical Data
Case: TO251 Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish – Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208 Weight: 0.33 grams (Approximate)
TO251 (Type TH)
Top View
Bottom View
GDS
Top View Pin Configuration
Internal Schematic
Ordering Information (Note 4)
Notes:
Part Number DMG3N60SJ3
Case TO251 (Type TH)
Packaging 75 Pieces/Tube
1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
3N60SJ YYWW
DMG3N60SJ3
Document number: DS39314 Rev. 3 - 2
= Manufacturer’s Marking 3N60SJ = Product Type Marking Code YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 20 = 2020) WW = Week Code (01 to 53)
1 of 7 www.diodes.com
June 2020
© Diodes Incorporated
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 5) VGS = 10V
Continuous Drain Current (Note 5) VGS = 10V
Maximum Body Diode Forward Current (Note 5) Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) Avalanche Current, L = 60mH (Note 7) Avalanche Energy, L = 60mH (Note 7) Peak Diode Recovery dv/dt
Steady State
Steady State
TC = +25°C TC = +100°C
TA = +25°C
Symbol VDSS VGSS
ID
ID
IS IDM IAS EAS dv/dt
DMG3N60SJ3
Value 600 ±30 2.8 1.8
0.7
2.5 4.2 1.0 33 5
Unit V V
A
A
A A A mJ V/ns
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 6) Thermal Resistance, Junction to Case (Note 5) Operating and Storage Temperature Range
TC = +25°C TC = +100°C TA = +25°C
Symbol
PD
PD RθJA RθJC TJ, TSTG
Value 41 16 2.5 49 3.0
-55 to +150
Unit W W °C/W °C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Static Drain-Source On-Resistance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge
Symbol
BVDSS IDSS IGSS
VGS(TH) RDS(ON)
VSD
Ciss Coss Crss RG QG QGS QGD tD(ON)
tR tD(OFF)
tF tRR QRR
Min
600
2.0
Typ
3.0 2.9 0.87
354 41 4 2.6 12.6 1.7 7.1 10.6 22 34 28 198 952
Max
1 100
4.0 3.5 1.5
Notes:
5. Device mounted on infinite heatsink. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout. 7. Guaranteed by design. Not subject to production testing. 8. Short duration pulse test used to minimize self-heating effect.
Unit
Test Condition
V VGS = 0V, ID = 250µA µA VDS = 600V, VGS = 0V nA VGS = ±30V, VDS = 0V
V VDS = VGS, ID = 250µA Ω VGS = 10V, ID = 1.5A V VGS = 0V, IS = 3.0A
pF VDS = 25V, f = 1.0MHz, VGS = 0V Ω VDS = 0V, VGS = 0V, f = 1.0MHz nC VDD = 480V, ID = 2.5A,
VGS = 10V
ns VDD = 300V, RG = 25Ω, ID = 2.5.