N-CHANNEL MOSFET. DMG7N65SCTI Datasheet

DMG7N65SCTI MOSFET. Datasheet pdf. Equivalent

DMG7N65SCTI Datasheet
Recommendation DMG7N65SCTI Datasheet
Part DMG7N65SCTI
Description N-CHANNEL MOSFET
Feature DMG7N65SCTI; DMG7N65SCTI N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 650V RDS(ON) 1.4Ω@VGS = 10V .
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Diodes DMG7N65SCTI
DMG7N65SCTI
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS
650V
RDS(ON)
1.4Ω@VGS = 10V
Package
ITO220AB
(Type TH)
ID
TC = +25°C
7.7A
Description
This new generation MOSFET features low on-resistance and fast
switching, making it ideal for high efficiency power management
applications.
Applications
Motor Control
Backlighting
DC-DC Converters
Power Management Functions
Features
Low Input Capacitance
High BVDSS Rating for Power Application
Low Input/Output Leakage
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
Case: ITO220AB (Type TH)
Case Material: Molded Plastic, “Green” Molding Compound, UL
Flammability Classification Rating 94V-0
Terminals: Matte Tin Finish Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram Below
Weight: 1.85 grams (Approximate)
ITO220AB (Type TH)
ESD PROTECTED
Top View
Bottom View
Equivalent Circuit
Top View
Pin Out Configuration
Ordering Information (Note 4)
Notes:
Part Number
DMG7N65SCTI
Case
ITO220AB (Type TH)
Packaging
50 pieces/tube
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
7N65SCT
YYWW
= Manufacturer’s Marking
7N65SCT = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Last Two Digits of Year (ex: 16 = 2016)
WW or WW = Week Code (01 to 53)
DMG7N65SCTI
Document number: DS39329 Rev. 2 - 2
1 of 7
www.diodes.com
January 2017
© Diodes Incorporated



Diodes DMG7N65SCTI
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Notes 5, 8) VGS = 10V
Maximum Body Diode Forward Current (Note 5)
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Avalanche Current, L = 60mH (Note 6)
Avalanche Energy, L = 60mH (Note 6)
Steady
State
TC = +25°C
TC = +100°C
Symbol
VDSS
VGSS
ID
IS
IDM
IAS
EAS
DMG7N65SCTI
Value
650
±30
7.7
4.8
10
10
1.1
42
Units
V
V
A
A
A
A
mJ
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
TC = +25°C
TC = +100°C
Symbol
PD
RJA
RJC
TJ, TSTG
Value
28
11
45
4.5
-55 to +150
Units
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Symbol
BVDSS
IDSS
IGSS
VGS(TH)
RDS(ON)
VSD
Ciss
Coss
Crss
RG
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
Min
650
2




Typ
1.1
0.8
886
63
8.9
1.4
25.2
3.5
12.4
10
11
36
15
271
1.9
Notes:
5. Device mounted on an infinite heatsink.
6. Guaranteed by design. Not subject to production testing.
7. Short duration pulse test used to minimize self-heating effect.
8. Drain current limited by maximum junction temperature.
Max
1
10
4
1.4
1.5




Unit
Test Condition
V VGS = 0V, ID = 250µA
µA VDS = 650V, VGS = 0V
µA VGS = ±24V, VDS = 0V
V
VDS = VGS, ID = 250µA
VGS = 10V, ID = 2.5A
V VGS = 0V, IS = 5A
pF VDS = 50V, f = 1.0MHz,
VGS = 0
VDS = 0V, VGS = 0V, f = 1.0MHz
nC VDS = 480V, ID = 5A,
VGS = 10V
ns VDS = 300V, RG = 4.7, ID = 2.5A,
VGS = 10V
ns
C VDS = 60V, IF = 5A, dI/dt = 100A/μs
DMG7N65SCTI
Document number: DS39329 Rev. 2 - 2
2 of 7
www.diodes.com
January 2017
© Diodes Incorporated



Diodes DMG7N65SCTI
6.0
VGS = 10.0V
5.0
VGS = 8.0V
VGS = 6.0V
4.0
VGS = 5.0V
VGS = 4.5V
3.0
2.0
VGS = 4.0V
1.0
VGS = 3.5V VGS = 3.8V
0.0
0
1.5
2
4
6
8
10
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
1.4
1.3
1.2
1.1
VGS = 10.0V
1
0
1
2
3
4
5
ID, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current
and Gate Voltage
4
3.5 VGS = 10V
TJ = 150oC
3
2.5
TJ = 125oC
2
1.5
TJ = 85oC
1
TJ = 25oC
0.5
TJ = -55oC
0
0
1
2
3
4
5
ID, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current
and Temperature
3
VDS = 10V
2.5
DMG7N65SCTI
2
1.5
1
0.5
0
0
10
9
8
7
6
5
4
3
2
1
0
0
3
TJ = 150oC
TJ = 125oC
TJ = 85oC
TJ = 25oC
TJ = -55oC
12345678
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
ID = 2.5A
5
10
15
20
25
30
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
2.5
2
VGS = 10V, ID = 2.5A
1.5
1
0.5
0
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE ()
Figure 6. On-Resistance Variation with Temperature
DMG7N65SCTI
Document number: DS39329 Rev. 2 - 2
3 of 7
www.diodes.com
January 2017
© Diodes Incorporated





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