DMN15H310SK3

isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 8.3A@ TC=25℃ ·Drain Source Voltage- : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 310mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 150 V ±20 V ID Drain Current-Continuous 8.3 A IDM Drain Current-Single Pluse 10 A PD Total Dissipation @TC=25℃ 32 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 3.9 ℃/W DMN15H310SK3 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA VGS(th) Gate Threshold Voltage VDS= VGS; ID= 0.25mA RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 1.5A IGSS Gate-Body Leakage Current VGS= ±20V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 120V; VGS= 0 VSD Forward On-Voltage IS= 1.7A; VGS= 0 DMN15H310SK3 MIN MAX UNIT 150 V 1.0 3.0 V 310 mΩ ±100 nA 1.0 μA 1.2 V NOTICE： ISC reserves the rights to make changes...