N-CHANNEL MOSFET. DMN80H2D0SCTI Datasheet

DMN80H2D0SCTI MOSFET. Datasheet pdf. Equivalent

DMN80H2D0SCTI Datasheet
Recommendation DMN80H2D0SCTI Datasheet
Part DMN80H2D0SCTI
Description N-CHANNEL MOSFET
Feature DMN80H2D0SCTI; DMN80H2D0SCTI N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 800V RDS(ON) 2.0Ω@VGS = 10V.
Manufacture DIODES
Datasheet
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DIODES DMN80H2D0SCTI
DMN80H2D0SCTI
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS
800V
RDS(ON)
2.0Ω@VGS = 10V
Package
ITO220AB
(Type TH)
ID
TC = +25°C
7A
Description
This new generation MOSFET features low on-resistance and fast
switching, making it ideal for high efficiency power management
applications.
Applications
Motor Control
Backlighting
DC-DC Converters
Power Management Functions
Features
Low Input Capacitance
High BVDSS Rating for Power Application
Low Input/Output Leakage
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
Case: ITO220AB (Type TH)
Case Material: Molded Plastic, “Green” Molding Compound, UL
Flammability Classification Rating 94V-0
Terminals: Matte Tin Finish Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram Below
Weight: 1.85 grams (Approximate)
ITO220AB (Type TH)
Top View
Bottom View
Equivalent Circuit
Top View
Pin Out Configuration
Ordering Information (Note 4)
Notes:
Part Number
DMN80H2D0SCTI
Case
ITO220AB (Type TH)
Packaging
50 pieces/tube
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
80H2D0S
YYWW
= Manufacturer’s Marking
80H2D0S = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Last Two Digits of Year (ex: 17 = 2017)
WW or WW = Week Code (01 to 53)
DMN80H2D0SCTI
Document number: DS39151 Rev. 2 - 2
1 of 7
www.diodes.com
April 2017
© Diodes Incorporated



DIODES DMN80H2D0SCTI
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 9), VGS = 10V
Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%) (Note 9)
Avalanche Current (Note 6)
Avalanche Energy (Note 6)
Peak Diode Recovery dv/dt
Steady TC = +25°C
State TC = +100°C
L = 30mH
L = 30mH
Symbol
VDSS
VGSS
ID
IDM
IAS
EAS
dv/dt
DMN80H2D0SCTI
Value
800
±30
7
4
28
2.0
60
2.8
Unit
V
V
A
A
A
mJ
V/ns
Thermal Characteristics
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
TC = +25°C
TC = +100°C
Symbol
PD
RθJA
RθJC
TJ, TSTG
Max
41
16
49.5
3
-55 to +150
Unit
W
°C/W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Symbol
BVDSS
IDSS
IGSS
VGS(TH)
RDS(ON)
VSD
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
tD(ON)
tF
tD(OFF)
tF
tRR
QRR
Min
800
2.0
Typ
3.3
1.4
0.86
1253
115
11
1.5
35.4
5.9
16.4
20.5
35.8
104
42.6
419
4324
Notes:
5. Device mounted on an infinite heatsink.
6. Guaranteed by design. Not subject to production testing.
7. ISD 4.5A, di/dt ≤ 200A/μs, VDD BVDSS, starting TJ = +25°C.
8. Short duration pulse test used to minimize self-heating effect.
9. Drain current limited by maximum junction temperature.
Max
25
±100
4.0
2.0
1.5
Unit
Test Condition
V
VGS = 0V, ID = 250µA
µA VDS = 800V, VGS = 0V
nA VGS = ±30V, VDS = 0V
V
VDS = VGS, ID = 250μA
Ω
VGS = 10V, ID = 2.5A
V
VGS = 0V, IS = 7.0A
pF
VDS = 25V, VGS = 0V,
f = 1.0MHz
Ω
VDS = 0V, VGS = 0V, f = 1.0MHz
nC VGS = 10V, VDS = 560V,
ID = 7A
ns
ns VGS = 10V, VDD = 350V,
ns RG = 25Ω, ID = 7A
ns
ns dI/dt = 100A/µs, VGS = 0V,
µC IF = 7A
DMN80H2D0SCTI
Document number: DS39151 Rev. 2 - 2
2 of 7
www.diodes.com
April 2017
© Diodes Incorporated



DIODES DMN80H2D0SCTI
10.0
9.0
8.0
VGS = 6.0V
VGS = 8.0V
7.0
VGS = 10.0V
6.0
VGS = 20.0V
VGS = 5.0V
5.0
4.0
3.0
VGS = 4.5V
2.0
1.0
0.0
0
2
VGS = 4.0V
2 4 6 8 10 12 14 16 18 20
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
1.8
1.6
1.4
1.2
VGS = 10V
1
0.8
0
1
2
3
4
5
ID, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current
and Gate Voltage
5
VGS = 10V
150oC
4
3
125oC
2
85oC
1
25oC
-55oC
0
1 1.5 2 2.5 3 3.5 4 4.5 5
ID, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current
and Temperature
DMN80H2D0SCTI
2
1.8 VDS = 10V
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
20
150oC
125oC
85oC
25oC
-55oC
1
2
3
4
5
6
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
18
16
14
12
10
8
6
4
2
ID = 2.5A
0
0
5
10
15
20
25
30
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
3
2.5
2
1.5
1
0.5
VGS = 10V, ID = 2.5A
0
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE ()
Figure 6. On-Resistance Variation with Temperature
DMN80H2D0SCTI
Document number: DS39151 Rev. 2 - 2
3 of 7
www.diodes.com
April 2017
© Diodes Incorporated





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