isc N-Channel MOSFET Transistor
DMN90H8D5HCT
FEATURES ·Drain Current –ID= 2.5A@ TC=25℃ ·Drain Source Voltage-
: VDSS= ...
isc N-Channel MOSFET
Transistor
DMN90H8D5HCT
FEATURES ·Drain Current –ID= 2.5A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 900V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 7.0Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION ·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
900
V
VGS
Gate-Source Voltage-Continuous
±30
V
ID
Drain Current-Continuous
2.5
A
IDM
Drain Current-Single Pluse
3
A
PD
Total Dissipation @TC=25℃
125
W
TJ
Max. Operating Junction Temperature -55~150 ℃
Tstg
Storage Temperature
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case
1.0
℃/W
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isc N-Channel MOSFET
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 0.25mA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID= 0.25mA
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID= 1A
IGSS
Gate-Body Leakage Current
VGS= ±30V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS= 900V; VGS= 0
VSD
Forward On-Voltage
IS= 2A; VGS= 0
DMN90H8D5HCT
MIN MAX UNIT
900
V
3.0
5.0
V
7.0
Ω
±100 nA
1
μA
1.2
V
NOTICE： ISC reserves the rights to make changes of t...
