N-CHANNEL MOSFET. DMN95H2D2HCTI Datasheet

DMN95H2D2HCTI MOSFET. Datasheet pdf. Equivalent

DMN95H2D2HCTI Datasheet
Recommendation DMN95H2D2HCTI Datasheet
Part DMN95H2D2HCTI
Description N-CHANNEL MOSFET
Feature DMN95H2D2HCTI; NOT RECOMMENDED FOR NEW DESIGN NO ALTERNATE PART DMN95H2D2HCTI Green N-CHANNEL ENHANCEMENT MODE MO.
Manufacture DIODES
Datasheet
Download DMN95H2D2HCTI Datasheet





DIODES DMN95H2D2HCTI
NOT RECOMMENDED FOR NEW DESIGN -
NO ALTERNATE PART
DMN95H2D2HCTI
Green
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS
950V
RDS(ON)
2.2Ω@VGS = 10V
ID
TC = +25°C
6A
Description
This new generation complementary dual MOSFET features low on-
resistance and fast switching, making it ideal for high efficiency power
management applications.
Features
Low Input Capacitance
High BVDSS Rating for Power Application
Low Input/Output Leakage
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
For automotive applications requiring specific change control
(i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and
manufactured in IATF 16949 certified facilities), please
contact us or your local Diodes representative.
https://www.diodes.com/quality/product-definitions/
Applications
Motor Control
Backlighting
DC-DC Converters
Power Management Functions
ITO220AB (Type TH)
Mechanical Data
Case: ITO220AB
Case Material: Molded Plastic, “Green” Molding Compound, UL
Flammability Classification Rating 94V-0
Terminals: Matte Tin Finish Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram Below
Weight: 1.85 grams (Approximate)
Top View
Bottom View
Equivalent Circuit
Top View
Pin Out Configuration
Ordering Information (Note 4)
Notes:
Part Number
DMN95H2D2HCTI
Case
ITO220AB (Type TH)
Packaging
50 Pieces/Tube
1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
95H2D2
YYWW
= Manufacturer’s Marking
95H2D2 = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Last Two Digits of Year (ex: 20 = 2020)
WW or WW = Week Code (01 to 53)
DMN95H2D2HCTI
Document number: DS39275 Rev. 3 - 3
1 of 7
www.diodes.com
November 2020
© Diodes Incorporated



DIODES DMN95H2D2HCTI
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5)
VGS = 10V
Pulsed Drain Current (Note 6)
Avalanche Current, L = 60mH (Note 7)
Avalanche Energy, L = 60mH (Note 7)
TC = +25°C
TC = +100°C
Symbol
VDSS
VGSS
ID
IDM
IAS
EAS
DMN95H2D2HCTI
Value
Unit
950
V
±30
V
6
4
A
24
A
3.5
A
360
mJ
Thermal Characteristics
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
TC = +25°C
TC = +100°C
TC = +25°C
Symbol
PD
RθJC
TJ, TSTG
Max
40
14
3.6
-55 to +150
Unit
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Symbol Min
BVDSS
950
IDSS
IGSS
VGS(TH)
3
RDS(ON)
VSD
Ciss
Coss
Crss
Rg

Qg

Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF

tRR
QRR

Typ
4
1.7
0.85
1487
113
1
4.7
20.3
6.4
6.1
39
49
51
31
607
8.1
Max
1
100
5
2.2
1.2




Notes:
5. Device mounted on infinite heatsink.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
7. Guaranteed by design. Not subject to production testing.
8. Short duration pulse test used to minimize self-heating effect.
Unit
V
µA
nA
V
V
pF
nC
ns
ns
µC
Test Condition
VGS = 0V, ID = 250µA
VDS = 950V, VGS = 0V
VGS = ±30V, VDS = 0V
VDS = VGS, ID = 250µA
VGS = 10V, ID = 3A
VGS = 0V, IS = 6A
VDS = 25V, f = 1MHz,
VGS = 0V
VDS = 0V, VGS = 0V, f = 1MHz
VDD = 720V, ID = 6A,
VGS = 10V
VDD = 450V, VGS = 10V,
Rg = 25, ID = 6A
IF = 6A, dI/dt = 100A/μs
DMN95H2D2HCTI
Document number: DS39275 Rev. 3 - 3
2 of 7
www.diodes.com
November 2020
© Diodes Incorporated



DIODES DMN95H2D2HCTI
DMN95H2D2HCTI
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
3
VGS = 8.0V
VGS = 10V
VGS = 7.0V
VGS = 6.0V
VGS = 5.5V
VGS = 5.0V
2
4
6
8
10
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
2.5
2
1.5
VGS = 10V
1
0.5
0
0
1
2
3
4
5
ID, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current
and Gate Voltage
6
VGS = 10V
5
150oC
125oC
4
85oC
3
2
25oC
1
-55oC
0
0
1
2
3
4
5
ID, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current and
Junction Temperature
3
VDS = 20V
2.5
2
1.5
1
0.5
0
2
4
150oC
125oC
85oC
25oC
-55oC
3
4
5
6
7
8
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
3.5
3
ID = 3A
2.5
2
1.5
1
0
5
10
15
20
25
30
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
3
2.5
2
1.5
1
VGS = 10V, ID = 3A
0.5
0
-50 -25 0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE ()
Figure 6. On-Resistance Variation with Junction
Temperature
DMN95H2D2HCTI
Document number: DS39275 Rev. 3 - 3
3 of 7
www.diodes.com
November 2020
© Diodes Incorporated





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