N-CHANNEL MOSFET. DMN6017SK3 Datasheet

DMN6017SK3 MOSFET. Datasheet pdf. Equivalent

DMN6017SK3 Datasheet
Recommendation DMN6017SK3 Datasheet
Part DMN6017SK3
Description N-CHANNEL MOSFET
Feature DMN6017SK3; ADVANCED INFORMATION DMN6017SK3 Green 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS.
Manufacture DIODES
Datasheet
Download DMN6017SK3 Datasheet




DIODES DMN6017SK3
DMN6017SK3
Green
60V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS
60V
RDS(ON) Max
18m@ VGS = 10V
20m@ VGS = 4.5V
ID Max
TC = +25°C
43A
41A
Features
Low On-Resistance
Low Input Capacitance
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(ON)) and yet maintain superior switching performance,
making it ideal for high-efficiency power management applications.
Power Management Functions
DC-DC Converters
Industrial
Mechanical Data
Case: TO252 (DPAK)
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Weight: 0.33 grams (Approximate)
Top View
Pin Out Top View
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number
DMN6017SK3-13
Case
TO252 (DPAK)
Packaging
2,500/Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
N6017S
YYWW
=Manufacturers Marking
N6017S = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 17 = 2017)
WW = Week Code (01 to 53)
DMN6017SK3
Document number: DS37725 Rev. 2 - 2
1 of 7
www.diodes.com
June 2017
© Diodes Incorporated



DIODES DMN6017SK3
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current, VGS = 10V (Note 5)
Pulsed Drain Current (380μs Pulse, Duty Cycle = 1%)
Maximum Continuous Body Diode Forward Current (Note 5)
Avalanche Current, L = 0.1mH
Avalanche Energy, L = 0.1mH
TC = +25°C
TC = +70°C
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
ID
IDM
IS
IAS
EAS
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
TA = +25°C
TC = +25°C
Symbol
PD
RJA
RJC
TJ, TSTG
DMN6017SK3
Value
Unit
60
V
±20
V
43
34
A
11
8.8
A
70
A
3.6
A
25
A
32
mJ
Value
3.3
50
38
2.5
-55 to +150
Unit
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Symbol
BVDSS
IDSS
IGSS
VGS(TH)
RDS(ON)
VSD
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
Min
60
-
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
-
-
-
2711
152
126
1.4
26
55
6.2
8.5
4.9
5.4
38.2
11
16.6
10.3
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.
Max
-
1
±100
3
18
20
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
Test Condition
V VGS = 0V, ID = 250μA
μA VDS = 48V, VGS = 0V
nA VGS = ±20V, VDS = 0V
V
VDS = VGS, ID = 250μA
mVGS = 10V, ID = 6A
VGS = 4.5V, ID = 4A
V
VGS = 0V, IS = 1A
pF
pF
VDS = 15V, VGS = 0V,
f = 1MHz
pF
VDS = 0V, VGS = 0V, f = 1MHz
nC
nC
nC VDS = 48V, ID = 6A
nC
ns
ns VDD = 30V, VGS = 10V,
ns Rg = 3.3Ω, , ID = 6A
ns
ns
nC IF = 6A, di/dt = 100A/μs
DMN6017SK3
Document number: DS37725 Rev. 2 - 2
2 of 7
www.diodes.com
June 2017
© Diodes Incorporated



DIODES DMN6017SK3
30.0
25.0
20.0
VGS = 10.0V
VGS = 3.5V
VGS=3.0V
VGS = 2.5V
15.0
10.0
VGS = 2.0V
5.0
VGS = 1.5V
0.0
0
1
2
3
4
5
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
0.015
DMN6017SK3
30
VDS = 5V
25
20
15
10
5
0
1
0.1
150
125
85
25
-55
1.5
2
2.5
3
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
0.014
0.013
VGS = 4.5V
0.08
0.06
0.012
0.011
VGS = 10V
0.04
0.02
ID = 6A
0.01
2
6 10 14 18 22 26 30
ID, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
0.03
0.025
VGS = 10V
150
125
0.02
85
0.015
25
0.01
-55
0.005
0 2 4 6 8 10 12 14 16 18 20
ID, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current and
Temperature
0
0
2
4
6
8
10
12
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
2.8
2.4
2
1.6
1.2 VGS = 4.5V, ID = 4A
0.8
0.4
VGS = 10V, ID = 6A
0
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE ()
Figure 6. On-Resistance Variation with Temperature
DMN6017SK3
Document number: DS37725 Rev. 2 - 2
3 of 7
www.diodes.com
June 2017
© Diodes Incorporated





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