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MMBT3904 Dataheets PDF



Part Number MMBT3904
Manufacturers NTE
Logo NTE
Description Silicon NPN Transistor
Datasheet MMBT3904 DatasheetMMBT3904 Datasheet (PDF)

MMBT3904 Silicon NPN Transistor General Purpose Amp, Surface Mount Description: The MMBT3904 is a silicon NPN transistor in a SOT−23 type surface mount package designed for use as a general purpose amplifier and switch. The useful dynamic range extends to 100mA as a switch and to 100MHz as an amplifier. Absolute Maximum Ratings: (TA = +25C, Note 1, Note 2 unless otherwise specified) Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..

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MMBT3904 Silicon NPN Transistor General Purpose Amp, Surface Mount Description: The MMBT3904 is a silicon NPN transistor in a SOT−23 type surface mount package designed for use as a general purpose amplifier and switch. The useful dynamic range extends to 100mA as a switch and to 100MHz as an amplifier. Absolute Maximum Ratings: (TA = +25C, Note 1, Note 2 unless otherwise specified) Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA Total Device Dissipation (Note 3), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350mW Derate above +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.8mW/C Thermal Resistance, Junction−to−Ambient (Note 3), RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . 357C/W Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C Note 1. Stresses exceeding the Absolute Maximum Ratings may damage the device. The device may not function or be operated above the Recommended Operating Conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the Recommended Operation Conditions may affect device reliability. The Absolute maximum ratings are stress ratings only. Note 2. These are steady−state limits and are based on a maximum junction temperature of +150C. Note 3. Device is mounted on FR−4 PCB 1.6 inch x 1.6 inch x 0.06 inch. Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Symbol Test Conditions OFF Characteristics Collector−Emitter Breakdown Voltage Collector−Base Breakdown Voltage Emitter−Base Breakdown Voltage V(BR)CEO V(BR)CBO V(BR)EBO IC = 1mA, IB = 0 IC = 10A, IE = 0 IE = 10A, IC = 0 Base Cut−Off Current Collector Cutoff Current IBL ICEX VCE = 30V, VBE = 3V VCE = 30V, VBE = 3V Min Typ Max Unit 40 − − V 60 − − V 6 − − V − − 50 nA − − 50 nA Electrical Characteristics (Cont’d): (TA = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit ON Characteristics (Note 4) DC Current Gain Collector−Emitter Saturation Voltage Base−Emitter Saturation Voltage Small−Signal Characteristics hFE VCE(sat) VBE(sat) VCE = 1V, IC = 0.1mA VCE = 1V, IC = 1mA VCE = 1V, IC = 10mA VCE = 1V, IC = 50mA VCE = 1V, IC = 100mA IC = 10mA, IB = 1mA IC = 50mA, IB = 5mA IC = 10mA, IB = 1mA IC = 50mA, IB = 5mA 40 − − 70 − − 100 − 300 60 − − 30 − − − − 0.2 V − − 0.3 V 0.65 − 0.85 V − − 0.95 V Current Gain−Bandwidth Product Output Capacitance Input Capacitance Noise Figure fT IC = 10mA, VCE = 20V, f = 100MHz 300 − Cobo VCB = 5V, IE = 0, f = 100kHz − − Cibo VEB = 0.5V, IC = 0, f = 100kHz − − NF VCE = 5V, IC = 100A, RS = 1k, − − f = 10Hz to 15.7kHz − MHz 4 pF 8 pF 5 dB Switching Characteristics Delay Time Rise Time Storage Time Fall Time td VCC = 3V, VBE = 0.5V, tr IC = 10mA, IB1 = 1mA ts VCC = 3V, IC = 10mA, tf IB1 = IB2 = 1mA − − 35 ns − − 35 ns − − 200 ns − − 50 ns Note 4. Pulse Test: Pulse Width  300s, Duty Cycle  2%. .016 (0.48) C .098 (2.5) Max B E .074 (1.9) .118 (3.0) Max .037 (0.95) .043 (1.1) .007 (0.2) .051 (1.3) .


KPT-1608ZGC MMBT3904 LMV339M


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