Document
MMBT3904 Silicon NPN Transistor General Purpose Amp, Surface Mount
Description: The MMBT3904 is a silicon NPN transistor in a SOT−23 type surface mount package designed for use as a general purpose amplifier and switch. The useful dynamic range extends to 100mA as a switch and to 100MHz as an amplifier.
Absolute Maximum Ratings: (TA = +25C, Note 1, Note 2 unless otherwise specified) Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA Total Device Dissipation (Note 3), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350mW
Derate above +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.8mW/C Thermal Resistance, Junction−to−Ambient (Note 3), RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . 357C/W Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C
Note 1. Stresses exceeding the Absolute Maximum Ratings may damage the device. The device may not function or be operated above the Recommended Operating Conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the Recommended Operation Conditions may affect device reliability. The Absolute maximum ratings are stress ratings only.
Note 2. These are steady−state limits and are based on a maximum junction temperature of +150C.
Note 3. Device is mounted on FR−4 PCB 1.6 inch x 1.6 inch x 0.06 inch.
Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
Collector−Emitter Breakdown Voltage Collector−Base Breakdown Voltage Emitter−Base Breakdown Voltage
V(BR)CEO V(BR)CBO V(BR)EBO
IC = 1mA, IB = 0 IC = 10A, IE = 0 IE = 10A, IC = 0
Base Cut−Off Current Collector Cutoff Current
IBL ICEX
VCE = 30V, VBE = 3V VCE = 30V, VBE = 3V
Min Typ Max Unit
40 −
−
V
60 −
−
V
6
−
−
V
−
− 50 nA
−
− 50 nA
Electrical Characteristics (Cont’d): (TA = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
ON Characteristics (Note 4)
DC Current Gain
Collector−Emitter Saturation Voltage Base−Emitter Saturation Voltage Small−Signal Characteristics
hFE
VCE(sat) VBE(sat)
VCE = 1V, IC = 0.1mA VCE = 1V, IC = 1mA VCE = 1V, IC = 10mA VCE = 1V, IC = 50mA VCE = 1V, IC = 100mA IC = 10mA, IB = 1mA IC = 50mA, IB = 5mA IC = 10mA, IB = 1mA IC = 50mA, IB = 5mA
40 −
−
70 −
−
100 − 300
60 −
−
30 −
−
−
− 0.2 V
−
− 0.3 V
0.65 − 0.85 V
−
− 0.95 V
Current Gain−Bandwidth Product Output Capacitance Input Capacitance Noise Figure
fT
IC = 10mA, VCE = 20V, f = 100MHz 300 −
Cobo VCB = 5V, IE = 0, f = 100kHz
−
−
Cibo VEB = 0.5V, IC = 0, f = 100kHz
−
−
NF
VCE = 5V, IC = 100A, RS = 1k,
−
−
f = 10Hz to 15.7kHz
− MHz 4 pF 8 pF 5 dB
Switching Characteristics
Delay Time Rise Time Storage Time Fall Time
td
VCC = 3V, VBE = 0.5V,
tr
IC = 10mA, IB1 = 1mA
ts
VCC = 3V, IC = 10mA,
tf
IB1 = IB2 = 1mA
−
− 35 ns
−
− 35 ns
−
− 200 ns
−
− 50 ns
Note 4. Pulse Test: Pulse Width 300s, Duty Cycle 2%.
.016 (0.48)
C
.098
(2.5)
Max
B
E
.074 (1.9) .118 (3.0) Max
.037 (0.95)
.043 (1.1)
.007 (0.2)
.051 (1.3)
.