NPN Transistor. MMBT3904 Datasheet

MMBT3904 Transistor. Datasheet pdf. Equivalent

MMBT3904 Datasheet
Recommendation MMBT3904 Datasheet
Part MMBT3904
Description Silicon NPN Transistor
Feature MMBT3904; MMBT3904 Silicon NPN Transistor General Purpose Amp, Surface Mount Description: The MMBT3904 is a s.
Manufacture NTE
Datasheet
Download MMBT3904 Datasheet




NTE MMBT3904
MMBT3904
Silicon NPN Transistor
General Purpose Amp, Surface Mount
Description:
The MMBT3904 is a silicon NPN transistor in a SOT23 type surface mount package designed for
use as a general purpose amplifier and switch. The useful dynamic range extends to 100mA as a
switch and to 100MHz as an amplifier.
Absolute Maximum Ratings: (TA = +25C, Note 1, Note 2 unless otherwise specified)
CollectorEmitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
CollectorBase Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
EmitterBase Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA
Total Device Dissipation (Note 3), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350mW
Derate above +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.8mW/C
Thermal Resistance, JunctiontoAmbient (Note 3), RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . 357C/W
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55to +150C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55to +150C
Note 1. Stresses exceeding the Absolute Maximum Ratings may damage the device. The device
may not function or be operated above the Recommended Operating Conditions and stress-
ing the parts to these levels is not recommended. In addition, extended exposure to stresses
above the Recommended Operation Conditions may affect device reliability. The Absolute
maximum ratings are stress ratings only.
Note 2. These are steadystate limits and are based on a maximum junction temperature of +150C.
Note 3. Device is mounted on FR4 PCB 1.6 inch x 1.6 inch x 0.06 inch.
Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
CollectorEmitter Breakdown Voltage
CollectorBase Breakdown Voltage
EmitterBase Breakdown Voltage
V(BR)CEO
V(BR)CBO
V(BR)EBO
IC = 1mA, IB = 0
IC = 10A, IE = 0
IE = 10A, IC = 0
Base CutOff Current
Collector Cutoff Current
IBL
ICEX
VCE = 30V, VBE = 3V
VCE = 30V, VBE = 3V
Min Typ Max Unit
40
V
60
V
6
V
50 nA
50 nA



NTE MMBT3904
Electrical Characteristics (Cont’d): (TA = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
ON Characteristics (Note 4)
DC Current Gain
CollectorEmitter Saturation Voltage
BaseEmitter Saturation Voltage
SmallSignal Characteristics
hFE
VCE(sat)
VBE(sat)
VCE = 1V, IC = 0.1mA
VCE = 1V, IC = 1mA
VCE = 1V, IC = 10mA
VCE = 1V, IC = 50mA
VCE = 1V, IC = 100mA
IC = 10mA, IB = 1mA
IC = 50mA, IB = 5mA
IC = 10mA, IB = 1mA
IC = 50mA, IB = 5mA
40
70
100 300
60
30
0.2 V
0.3 V
0.65 0.85 V
0.95 V
Current GainBandwidth Product
Output Capacitance
Input Capacitance
Noise Figure
fT
IC = 10mA, VCE = 20V, f = 100MHz 300
Cobo VCB = 5V, IE = 0, f = 100kHz
Cibo VEB = 0.5V, IC = 0, f = 100kHz
NF
VCE = 5V, IC = 100A, RS = 1k,
f = 10Hz to 15.7kHz
MHz
4 pF
8 pF
5 dB
Switching Characteristics
Delay Time
Rise Time
Storage Time
Fall Time
td
VCC = 3V, VBE = 0.5V,
tr
IC = 10mA, IB1 = 1mA
ts
VCC = 3V, IC = 10mA,
tf
IB1 = IB2 = 1mA
35 ns
35 ns
200 ns
50 ns
Note 4. Pulse Test: Pulse Width 300s, Duty Cycle 2%.
.016 (0.48)
C
.098
(2.5)
Max
B
E
.074 (1.9)
.118 (3.0) Max
.037 (0.95)
.043 (1.1)
.007 (0.2)
.051
(1.3)





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