isc N-Channel MOSFET Transistor
DMNH10H028SK3
FEATURES ·Drain Current –ID= 55A@ TC=25℃ ·Drain Source Voltage-
: VDSS= ...
isc N-Channel MOSFET
Transistor
DMNH10H028SK3
FEATURES ·Drain Current –ID= 55A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 100V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 28mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION ·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS VGS
Drain-Source Voltage Gate-Source Voltage-Continuous
100
V
±20
V
ID
Drain Current-Continuous
55
A
IDM
Drain Current-Single Pluse
58
A
PD
Total Dissipation @TC=25℃
3.7
W
TJ
Max. Operating Junction Temperature -55~175 ℃
Tstg
Storage Temperature
-55~175 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case
1.2
℃/W
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isc N-Channel MOSFET
Transistor
DMNH10H028SK3
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 0.25mA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID= 0.25mA
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID= 20A
IGSS
Gate-Body Leakage Current
VGS= ±20V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS=100V; VGS= 0
VSD
Forward On-Voltage
IS= 1.0A; VGS= 0
MIN MAX UNIT
100
V
2.0
3.3
V
28
mΩ
±100 nA
1.0
μA
1.2
V
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