isc P-Channel MOSFET Transistor
FEATURES ·Drain Current –ID= -35A@ TC=25℃ ·Drain Source Voltage-
: VDSS= -40V(Min) ·Sta...
isc P-Channel MOSFET
Transistor
FEATURES ·Drain Current –ID= -35A@ TC=25℃ ·Drain Source Voltage-
: VDSS= -40V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 11mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION ·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS VGS
Drain-Source Voltage Gate-Source Voltage-Continuous
-40
V
±25
V
ID
Drain Current-Continuous
-35
A
IDM
Drain Current-Single Pluse
-100
A
PD
Total Dissipation @TC=25℃
42
W
TJ
Max. Operating Junction Temperature -55~150 ℃
Tstg
Storage Temperature
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case
3.0
℃/W
DMP4015SK3
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc P-Channel MOSFET
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= -0.25mA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID= -0.25mA
RDS(on) Drain-Source On-Resistance
VGS= -10V; ID= -9.8A
IGSS
Gate-Body Leakage Current
VGS= ±25V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS= -40V; VGS= 0
VSD
Forward On-Voltage
IS= -1.0A; VGS= 0
DMP4015SK3
MIN MAX UNIT
-40
V
-1.5
-2.5
V
11
mΩ
±100 nA
-1.0
μA
-1.0
V
NOTICE: ISC reserves the rights to make ch...