N-CHANNEL MOSFET. DMTH10H005LCT Datasheet

DMTH10H005LCT MOSFET. Datasheet pdf. Equivalent

DMTH10H005LCT Datasheet
Recommendation DMTH10H005LCT Datasheet
Part DMTH10H005LCT
Description N-CHANNEL MOSFET
Feature DMTH10H005LCT; Green DMTH10H005LCT 100V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 100V RD.
Manufacture DIODES
Datasheet
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DIODES DMTH10H005LCT
Green
DMTH10H005LCT
100V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS
100V
RDS(ON)
5m@VGS = 10V
ID
TC = +25°C
140A
Description
This new generation MOSFET features low on-resistance and fast
switching, making it ideal for high-efficiency power management
applications.
Features
Rated to +175°C Ideal for High Ambient Temperature
Environments
100% Unclamped Inductive Switching Ensures More Reliable
and Robust End Application
Low Input Capacitance
High BVDSS Rating for Power Application
Low Input/Output Leakage
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Applications
Motor Control
Backlighting
DC-DC Converters
Power Management Functions
Mechanical Data
Case: TO220AB
Case Material: Molded Plastic, ―Green‖ Molding Compound. UL
Flammability Classification Rating 94V-0
Terminals: Matte Tin Finish Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram Below
Weight: 1.85 grams (Approximate)
TO220AB
Top View
Bottom View
Equivalent Circuit
Top View
Pin Out Configuration
Ordering Information (Note 4)
Notes:
Part Number
DMTH10H005LCT
Case
TO220AB
Packaging
50 Pieces/Tube
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
DMTH10H005LCT
Document number: DS38718 Rev. 4 - 2
H10H005
YYWW
= Manufacturer’s Marking
H10H005 = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Last Two Digits of Year (ex: 16 = 2016)
WW or WW = Week Code (01 to 53)
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December 2016
© Diodes Incorporated



DIODES DMTH10H005LCT
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current
Maximum Continuous Body Diode Forward Current
Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%)
Avalanche Current, L = 3mH (Note 7)
Avalanche Energy, L = 3mH (Note 7)
Avalanche Current, L = 0.1mH
Avalanche Energy, L = 0.1mH
TC = +25°C
TC = +100°C
TC = +25°C
Symbol
VDSS
VGSS
ID
IS
IDM
IAS
EAS
IAS
EAS
DMTH10H005LCT
Value
100
±20
140
99
100
150
19
542
25
31.2
Units
V
V
A
A
A
A
mJ
A
mJ
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
TA = +25°C
TC = +25°C
Symbol
PD
RθJA
PD
RθJC
TJ, TSTG
Value
-55 to +175
Units
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Symbol Min
BVDSS
100
IDSS
IGSS
VGS(TH)
1.4
RDS(ON)
VSD
Ciss
Coss
Crss
RG
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
Typ
1.9
4
3688
1494
48
0.75
114
22.5
17.6
25
26.9
83.6
53.1
65.5
155.9
Max
1
±100
3.5
5
1.3
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.
Unit
Test Condition
V
VGS = 0V, ID = 1mA
µA VDS = 80V, VGS = 0V
nA VGS = ±20V, VDS = 0V
V
VDS = VGS, ID = 250 A
mVGS = 10V, ID = 13A
V
VGS = 0V, IS = 13A
pF
VDS = 50V, VGS = 0V
f = 1MHz
VDS = 0V, VGS = 0V, f = 1MHz
nCVDD = 50V, ID = 13A,
ns
VDD = 50V, VGS = 10V,
ID = 13A, RG = 6
ns
nC IF = 13A, di/dt = 100A/µs
DMTH10H005LCT
Document number: DS38718 Rev. 4 - 2
2 of 7
www.diodes.com
December 2016
© Diodes Incorporated



DIODES DMTH10H005LCT
50
VGS = 10V
45
VGS = 5V
VGS = 4.5V
40
VGS = 4V
35
30
VGS = 3.5V
25
20
15
10
5
VGS = 3.0V
00
0.5
1
1.5
2
2.5
3
VDS , DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristic
5
4.8
4.6
4.4
4.2
VGS = 10V
4
3.8
3.6
3.4
3.2
3
0
10
20
30
40
50
ID, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
10
VGS = 10V
9
TA = 175°C
8
TA = 150°C
7
TA = 125°C
6
TA = 85°C
5
TA = 25°C
4
3
TA = -55°C
2
1
0
0
5
10
15
20
25
30
I D, DRAIN CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
30
VDS = 5.0V
25
20
T A = 175°C
TA = 150°C
15
TA = 125°C
TA = 85°C
10
DMTH10H005LCT
TA = 25°C
TA = -55°C
5
0
1
10
2
3
4
5
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
9
ID = 13A
8
7
6
5
4
3
0
4
8
12
16
20
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Drain-Source On-Resistance
vs. Gate-Source Voltage
2.5
2.3
2.1
1.9
VGS = 10V
ID = 13A
1.7
1.5
1.3
1.1
0.9
0.7
0.5-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (C)
Figure 6 On-Resistance Variation with Temperature
DMTH10H005LCT
Document number: DS38718 Rev. 4 - 2
3 of 7
www.diodes.com
December 2016
© Diodes Incorporated





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