N-CHANNEL MOSFET. DMTH10H005SCT Datasheet

DMTH10H005SCT MOSFET. Datasheet pdf. Equivalent

DMTH10H005SCT Datasheet
Recommendation DMTH10H005SCT Datasheet
Part DMTH10H005SCT
Description N-CHANNEL MOSFET
Feature DMTH10H005SCT; Green DMTH10H005SCT 100V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 100V RD.
Manufacture DIODES
Datasheet
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DIODES DMTH10H005SCT
Green
DMTH10H005SCT
100V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS
100V
RDS(ON)
5m@VGS = 10V
ID
TC = +25°C
140A
Description
This new generation MOSFET features low on-resistance and fast
switching, making it ideal for high-efficiency power management
applications.
Features
Rated to +175°C Ideal for High Ambient Temperature
Environments
100% Unclamped Inductive Switching Ensures More Reliable
and Robust End Application
Low Input Capacitance
High BVDSS Rating for Power Application
Low Input/Output Leakage
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Applications
Motor Control
Backlighting
DC-DC Converters
Power Management Functions
Mechanical Data
Case: TO220AB
Case Material: Molded Plastic, ―Green‖ Molding Compound.
UL Flammability Classification Rating 94V-0
Terminals: Matte Tin Finish Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram Below
Weight: 1.85 grams (Approximate)
TO220AB
Top View
Bottom View
Equivalent Circuit
Top View
Pin Out Configuration
Ordering Information (Note 4)
Notes:
Part Number
DMTH10H005SCT
Case
TO220AB
Packaging
50 Pieces/Tube
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
TH1H005S
YYWW
=Manufacturer’s Marking
TH1H005S = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Last Two Digits of Year (ex: 17 = 2017)
WW or WW = Week Code (01 to 53)
DMTH10H005SCT
Document number: DS39468 Rev. 2 - 2
1 of 6
www.diodes.com
June 2017
© Diodes Incorporated



DIODES DMTH10H005SCT
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current
Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%)
Maximum Continuous Body Diode Forward Current
Pulsed Body Diode Forward Current (10μs Pulse, Duty Cycle = 1%)
Avalanche Current, L = 3mH (Note 7)
Avalanche Energy, L = 3mH (Note 7)
Avalanche Current, L = 0.1mH
Avalanche Energy, L = 0.1mH
TC = +25°C
TC = +100°C
TC = +25°C
Symbol
VDSS
VGSS
ID
IDM
IS
ISM
IAS
EAS
IAS
EAS
DMTH10H005SCT
Value
Unit
100
V
±20
V
140
99
A
400
A
100
A
400
A
19
A
542
mJ
25
A
31.2
mJ
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
TA = +25°C
TC = +25°C
Symbol
PD
RθJA
PD
RθJC
TJ, TSTG
Value
2.9
51
187
0.8
-55 to +175
Unit
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Symbol Min
BVDSS
100
IDSS
IGSS
VGS(TH)
2
RDS(ON)
VSD
CISS
COSS
CRSS
Rg
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
Typ
3.8
8,474
1,608
78
0.41
111.7
28.9
21.3
29.9
30.3
79.7
41.6
70
181
Max
1
±100
4
5
1.3
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.
Unit
Test Condition
V
VGS = 0V, ID = 1mA
µA VDS = 80V, VGS = 0V
nA VGS = ±20V, VDS = 0V
V
VDS = VGS, ID = 250µA
mVGS = 10V, ID = 13A
V
VGS = 0V, IS = 13A
pF
VDS = 50V, VGS = 0V
f = 1MHz
VDS = 0V, VGS = 0V, f = 1MHz
nCVDD = 50V, ID = 13A, VGS = 10V
ns
VDD = 50V, VGS = 10V,
ID = 13A, Rg = 6
ns
nC IF = 13A, di/dt = 100A/µs
DMTH10H005SCT
Document number: DS39468 Rev. 2 - 2
2 of 6
www.diodes.com
June 2017
© Diodes Incorporated



DIODES DMTH10H005SCT
50.0
45.0
40.0
35.0
30.0
25.0
20.0
15.0
10.0
5.0
0.0
0
6.00
VGS = 10.0V
VGS = 8.0V
VGS = 6.0V
VGS = 4.5V
VGS = 3.4V
VGS = 4.0V
VGS = 3.6V VGS = 3.8V
0.5
1
1.5
2
2.5
3
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1.Typical Output Characteristic
DMTH10H005SCT
30
VDS= 5.0V
25
TJ= 175
20
TJ= 150
15
TJ= 125
10
5
0
0
TJ= 85
TJ= 25
TJ= -55
1
2
3
4
5
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
30
5.50
VGS = 6.0V
25
5.00
20
4.50
4.00
VGS = 10V
15
ID = 13A
10
3.50
5
3.00
0 2 4 6 8 10 12 14 16 18 20
ID, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
0.012
0.01
0.008
0.006
0.004
0.002
VGS=10V
TJ= 150
TJ= 175
TJ= 125
TJ= 85
TJ= 25
TJ= -55
0
0
5
10
15
20
25
30
ID, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current and
Temperature
0
2 4 6 8 10 12 14 16 18 20
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
2.2
2
1.8
VGS = 10V, ID = 13A
1.6
1.4
1.2
VGS = 6.0V, ID = 13A
1
0.8
0.6
0.4
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE ()
Figure 6. On-Resistance Variation with Temperature
DMTH10H005SCT
Document number: DS39468 Rev. 2 - 2
3 of 6
www.diodes.com
June 2017
© Diodes Incorporated





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